摘要:
An integrated circuit layout includes a P-type active region, an N-type active region, a first metal connection, a second metal connection and a plurality of trunks. The plurality of trunks is formed substantially side-by-side, and in parallel with each other. The first metal connection is substantially disposed over the P-type active region, and is electrically connected with drain regions of PMOS transistors in the P-type active region. The second metal connection is substantially disposed over the N-type active region, and is electrically connected with drain regions of NMOS transistors in the N-type active region. The plurality of trunks is electrically connected with and is substantially perpendicular to the first metal connection and the second metal connection. A first trunk of the plurality of trunks has a width wider than a width of other trunks of the plurality of trunks and is arranged to be located between two groups of trunks.
摘要:
An integrated circuit layout includes a P-type active region and an N-type active region, and a plurality of trunks. The integrated circuit layout further includes a first metal connection connected to the P-type active region; and a second metal connection connected to the N-type active region. Each trunk of the plurality of trunks is electrically connected with the first metal connection and the second metal connection. Each trunk of the plurality of trunks is substantially perpendicular to the first metal connection and the second metal connection. A first trunk of the plurality of trunks has a width wider than a width of other trunks of the plurality of trunks.
摘要:
An integrated circuit includes a first diffusion area for a first type transistor. The first type transistor includes a first drain region and a first source region. A second diffusion area for a second type transistor is separated from the first diffusion area. The second type transistor includes a second drain region and a second source region. A gate electrode continuously extends across the first diffusion area and the second diffusion area in a routing direction. A first metallic structure is electrically coupled with the first source region. A second metallic structure is electrically coupled with the second drain region. A third metallic structure is disposed over and electrically coupled with the first and second metallic structures. A width of the first metallic structure is substantially equal to or larger than a width of the third metallic structure.
摘要:
A method of designing an integrated circuit includes deploying an active area in a first standard cell. At least one gate electrode is routed, overlapping the active area in the first standard cell. At least one metallic line structure is routed, overlapping the active area in the first standard cell. The at least one metallic line structure is substantially parallel to the gate electrode. A first power rail is routed substantially orthogonal to the at least one metallic line structure in the first standard cell. The first power rail overlaps the at least one metallic line structure. The first power rail has a flat edge that is adjacent to the at least one metallic line structure. A first connection plug is deployed at a region where the first power rail overlaps the at least one metallic line structure in the first standard cell.
摘要:
A method of designing an integrated circuit includes defining at least one dummy layer covering at least one of a portion of a first metallic layer and a portion of a second metallic layer of an integrated circuit. The second metallic layer is disposed over the first metallic layer. The first metallic layer, the second metallic layer and a gate electrode of the integrated circuit have a same routing direction. A logical operation is performed to a file corresponding to the at least one of the portion of the first metallic layer and the portion of the second metallic layer covered by the dummy layer so as to size at least one of the portion of the first metallic layer and the portion of the second metallic layer.
摘要:
A word line decoder comprises a plurality of driver circuits, a plurality of word lines provided at respective outputs of the driver circuits, and a plurality of primary input lines coupled to the driver circuits and oriented in a first direction. The word line decoder also comprises a plurality of secondary input lines coupled to the driver circuits and oriented in the first direction. The word line decoder also comprises a local decode line coupled to each of the primary input lines. The word line decoder also comprises a decode line coupled to the local decode line and oriented in the first direction. A cluster decode line is coupled to the decode line. The word line decoder is configured to select at least one of the word lines based on signals provided by the cluster decode line and the secondary input lines.
摘要:
An integrated circuit includes a layer of a semiconductor device including a standard cell configuration having a fixed gate electrode pitch between gate electrode lines and a resistor formed of metal between the fixed gate electrode pitch of the standard cell configuration. In one embodiment, the integrated circuit can be charged device model (CDM) electrostatic discharge (ESD) protection circuit for a cross domain standard cell having the resistor formed of metal. A method of manufacturing integrated circuits includes forming a plurality of gate electrode lines separated by a gate electrode pitch to form a core standard cell device, applying at least a first layer of metal within the gate electrode pitch to form a portion of a resistor, and applying at least a second layer of metal to couple to the first layer of metal to form another portion of the resistor.
摘要:
A word line driver includes an active area having a length that extends in a first direction over a semiconductor substrate. A plurality of fingers formed over an upper surface of the active area. Each of the plurality of fingers has a length that extends in a second direction and forms a MOS transistor with a portion of the active area. A first dummy structure is disposed between an outer one of the plurality of fingers and an edge of the semiconductor substrate. The first dummy structure includes a portion that is at least partially disposed over a portion of the active area.
摘要:
A method includes selecting a cell stored in a non-transient computer readable storage medium, arranging a plurality of the cells on a model of a semiconductor device, and creating a mask for the semiconductor device based on the model of the semiconductor device. The cell is designed according to a design rule in which a first power-supply-connection via satisfies a criterion from the group consisting of: i) the first power-supply-connection via is spaced apart from a second power-supply-connection via by a distance that is greater than a threshold distance such that the cell can be fabricated by a single-photolithography single-etch process, or ii) the first power-supply-connection via is coupled to first and second substantially parallel conductive lines that extend along directly adjacent tracks.
摘要:
A method of designing an integrated circuit includes providing a cell library including a first and second cell structures. The cell structures each include a dummy gate electrode disposed on a boundary. An edge gate electrode is disposed adjacent to the dummy gate electrode. An oxide definition (OD) region has an edge disposed between the edge gate electrode and the dummy gate electrode. The method includes determining if the cell structures are to be abutted with each other. If so, the method includes abutting the cell structures. If not so, the method includes increasing areas of portions of the OD regions between the edge gate electrodes and the dummy gate electrodes.