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1.发明授权Method of selecting a grid model for correcting a process recipe for grid deformations in a lithographic apparatus and lithographic assembly using the same 有权选择用于校正光刻设备中的网格变形的工艺配方的网格模型和使用其的光刻组件的方法公开(公告)号：US07468795B2
公开(公告)日：2008-12-23
申请号：US11484849
申请日：2006-07-12
申请人： Hubertus Johannes Gertrudus Simons , Henricus Johannes Lambertus Megens , Everhardus Cornelis Mos , Leonardus Henricus Marie Verstappen , Roy Werkman , Henricus Jacobus Maria Verhoeven
发明人： Hubertus Johannes Gertrudus Simons , Henricus Johannes Lambertus Megens , Everhardus Cornelis Mos , Leonardus Henricus Marie Verstappen , Roy Werkman , Henricus Jacobus Maria Verhoeven
IPC分类号： G01B11/00
CPC分类号： G03F9/7003 , G03F7/70516 , G03F7/70616 , G03F7/70633 , G03F9/7011 , G03F9/7019
摘要： A method of selecting a grid model for correcting a process recipe for grid deformations in a lithographic apparatus is disclosed. First a set of grid models is provided. Subsequently, alignment data are obtained by performing an alignment measurement on a plurality of alignment marks on a number of substrates. For each grid model it is checked whether the alignment data is suitable to solve the grid model. If so, the grid model is added to a subset of grid models. The grid model with lowest residuals is selected. In addition to alignment data, metrology data may be obtained by performing an overlay measurement on a plurality of overlay marks on the number of substrates. For each grid model of the subset simulated metrology data may then be determined that is used to determine overlay performance indicators. The grid model is then selected using the overlay performance indicators.
摘要翻译： 公开了一种选择用于校正光刻设备中的网格变形的处理配方的网格模型的方法。 首先提供一组网格模型。 随后，通过对多个基板上的多个对准标记进行取向测量来获得对准数据。 对于每个网格模型，检查对齐数据是否适合解决网格模型。 如果是，则将网格模型添加到网格模型的子集中。 选择具有最低残差的网格模型。 除了对准数据之外，可以通过对基板数量上的多个覆盖标记执行覆盖测量来获得度量数据。 对于子集的每个网格模型，可以确定用于确定覆盖性能指标的模拟计量数据。 然后使用覆盖性能指标选择网格模型。
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公开(公告)号：US07547495B2
公开(公告)日：2009-06-16
申请号：US11312650
申请日：2005-12-21
CPC分类号： G03F7/70466 , G03F7/70558 , G03F7/70625
摘要： In a double exposure process to print features at a reduced pitch, the critical dimension of features printed in the first exposure is measured and used as a target for the second exposure.
摘要翻译： 在以减小的间距打印特征的双重曝光过程中，测量在第一曝光中印刷的特征的临界尺寸并将其用作第二曝光的目标。
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公开(公告)号：US08749775B2
公开(公告)日：2014-06-10
申请号：US12882631
申请日：2010-09-15
IPC分类号： G01N21/00
CPC分类号： G03F1/84 , G01N21/47 , G01N21/95607
摘要： A method and apparatus is used for inspection of devices to detect processing faults on semiconductor wafers. The method includes illuminating a strip of a die along a scan path with a moving measurement spot. The method further includes detecting scattered radiation to obtain an angle-resolved spectrum, and comparing the scattering data with a library of reference spectra. Based on the comparison, the method includes determining the presence of a fault of the die at the strip. The illumination and detection are performed along the scan path across a region, such that the scattering data is spatially integrated over the region.
摘要翻译： 一种方法和装置用于检查用于检测半导体晶片上的处理故障的装置。 该方法包括用移动测量点沿扫描路径照射模具条。 该方法还包括检测散射辐射以获得角度分辨光谱，并将散射数据与参考光谱库进行比较。 基于比较，该方法包括确定在条带处存在管芯的故障。 照射和检测沿着跨越区域的扫描路径执行，使得散射数据在该区域上被空间整合。
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公开(公告)号：US08724087B2
公开(公告)日：2014-05-13
申请号：US12933481
申请日：2009-04-08
申请人： Marcus Adrianus Van De Kerkhof , Antoine Gaston Marie Kiers , Maurits Van Der Schaar , Leonardus Henricus Marie Verstappen , Scott Anderson Middlebrooks , Andreas Fuchs
发明人： Marcus Adrianus Van De Kerkhof , Antoine Gaston Marie Kiers , Maurits Van Der Schaar , Leonardus Henricus Marie Verstappen , Scott Anderson Middlebrooks , Andreas Fuchs
IPC分类号： G03B27/54
CPC分类号： G03F7/70616 , G01N21/47 , G01N21/9501
摘要： A scatterometer configured to measure a property of a substrate, includes a radiation source configured to provide a radiation beam; and a detector configured to detect a spectrum of the radiation beam reflected from a target (30) on the surface of the substrate (W) and to produce a measurement signal representative of the spectrum. The apparatus includes a beam shaper (51, 53) interposed in the radiation path between the radiation source and the detector, the beam shaper being configured to adjust the cross section of the beam dependent on the shape and/or size of the target.
摘要翻译： 配置成测量衬底性质的散射仪包括被配置为提供辐射束的辐射源; 以及检测器，其被配置为检测从所述基板（W）的表面上的目标（30）反射的所述辐射束的光谱，并产生表示所述光谱的测量信号。 该装置包括插入在辐射源和检测器之间的辐射路径中的光束整形器（51,53），光束整形器被配置为根据目标的形状和/或尺寸来调节光束的横截面。
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公开(公告)号：US09201310B2
公开(公告)日：2015-12-01
申请号：US13055594
申请日：2009-07-27
CPC分类号： G03F7/70633 , G03F7/705
摘要： The overlay error of a target in a scribelane is measured. The overlay error of the required feature in the chip area may differ from this due to, for example, different responses to the exposure process. A model is used to simulate these differences and thus a more accurate measurement of the overlay error of the feature determined.
摘要翻译： 测量scribelane中目标的重叠误差。 由于例如对曝光处理的不同响应，芯片区域中所需特征的覆盖误差可能与此不同。 使用模型来模拟这些差异，从而更准确地测量所确定的特征的覆盖误差。
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公开(公告)号：US20110141444A1
公开(公告)日：2011-06-16
申请号：US12933481
申请日：2009-04-08
申请人： Marcus Adrianus Van De Kerkhof , Antoine Gaston Marie Kiers , Maurits Van Der Schaar , Leonardus Henricus Marie Verstappen , Scott Anderson Middlebrooks , Andreas Fuchs
发明人： Marcus Adrianus Van De Kerkhof , Antoine Gaston Marie Kiers , Maurits Van Der Schaar , Leonardus Henricus Marie Verstappen , Scott Anderson Middlebrooks , Andreas Fuchs
CPC分类号： G03F7/70616 , G01N21/47 , G01N21/9501
摘要： A scatterometer configured to measure a property of a substrate, includes a radiation source configured to provide a radiation beam; and a detector configured to detect a spectrum of the radiation beam reflected from a target (30) on the surface of the substrate (W) and to produce a measurement signal representative of the spectrum. The apparatus includes a beam shaper (51, 53) interposed in the radiation path between the radiation source and the detector, the beam shaper being configured to adjust the cross section of the beam dependent on the shape and/or size of the target.
摘要翻译： 配置成测量衬底性质的散射仪包括被配置为提供辐射束的辐射源; 以及检测器，其被配置为检测从所述基板（W）的表面上的目标（30）反射的所述辐射束的光谱，并产生表示所述光谱的测量信号。 该装置包括插入在辐射源和检测器之间的辐射路径中的光束整形器（51,53），光束整形器被配置为根据目标的形状和/或尺寸来调节光束的横截面。
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公开(公告)号：US20110200246A1
公开(公告)日：2011-08-18
申请号：US13055594
申请日：2009-07-27
IPC分类号： G06K9/00
CPC分类号： G03F7/70633 , G03F7/705
摘要： The overlay error of a target in a scribelane is measured. The overlay error of the required feature in the chip area may differ from this due to, for example, different responses to the exposure process. A model is used to simulate these differences and thus a more accurate measurement of the overlay error of the feature determined.
摘要翻译： 测量scribelane中目标的重叠误差。 由于例如对曝光处理的不同响应，芯片区域中所需特征的覆盖误差可能与此不同。 使用模型来模拟这些差异，从而更准确地测量所确定的特征的覆盖误差。
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8.发明授权Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method 有权检测方法和装置，光刻设备，光刻处理单元和器件制造方法公开(公告)号：US07630087B2
公开(公告)日：2009-12-08
申请号：US11603257
申请日：2006-11-22
IPC分类号： G01B11/24
CPC分类号： G01B11/24 , G01N21/4788 , G01N21/95607 , G03F7/70625
摘要： Measurement of a profile of a scatterometry object on top of one or more product layers on a substrate is disclosed. To prevent an unknown parameters of one or more product layers having an effect on the measurement of the object profile, the thickness of the one or more product layers is measured prior to measuring the profile of the scatterometry object on the layer(s). In an embodiment, each of a plurality of product layers is measured as it is exposed so that only the degree of freedom of the most recently exposed product layer is unknown at each measurement step. When each of a plurality of product layers has been measured, and a scatterometry object is placed at the top of the layers, only the degrees of freedom of that scatterometry object should be unknown and only the profile of the object should need to be measured.
摘要翻译： 公开了在衬底上的一个或多个产品层之上的散射对象的轮廓的测量。 为了防止影响对象轮廓测量的一个或多个产品层的未知参数，在测量层之间的散射对象的轮廓之前测量一个或多个产品层的厚度。 在一个实施例中，多个产品层中的每一个在被暴露时被测量，使得在每个测量步骤中仅最近曝光的产品层的自由度是未知的。 当已经测量了多个产品层中的每一个并且散射物体放置在层的顶部时，仅该散射对象的自由度应该是未知的，并且仅需要测量对象的轮廓。
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