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    Alignment system, lithographic system and method
    2.
    发明授权
    Alignment system, lithographic system and method 有权
    对准系统，光刻系统和方法

    公开(公告)号：US08706442B2

    公开(公告)日：2014-04-22

    申请号：US13000443

    申请日：2009-07-03

    申请人： Everhardus Cornelis Mos ,  Henricus Johannes Lambertus Megens ,  Maurits Van Der Schaar ,  Hubertus Johannes Gertrudus Simons ,  Scott Anderson Middlebrooks

    发明人： Everhardus Cornelis Mos ,  Henricus Johannes Lambertus Megens ,  Maurits Van Der Schaar ,  Hubertus Johannes Gertrudus Simons ,  Scott Anderson Middlebrooks

    IPC分类号： G06F15/00 ,  G03B27/54

    CPC分类号： G03F9/7003 ,  G03F7/705 ,  G03F7/70633

    摘要： A lithographic system includes a lithographic apparatus comprising a projection system which projects a patterned radiation beam onto a target portion of a substrate and an alignment system which measures the position of a feature of the pattern on the substrate at a number of locations over the substrate. A controller compares the measured positions with points on a grid of values and extrapolates values for intermediate positions on the substrate based on values of corresponding intermediate points on the grid, so as to provide an indication of the intermediate positions on the substrate and their displacements relative to the grid. The grid is based on at least one orthogonal basis function, the measurement on the substrate being performed at positions corresponding to the root values of the at least one orthogonal basis function.

    摘要翻译： 光刻系统包括光刻设备，其包括投影系统，该投影系统将图案化的辐射束投影到基板的目标部分上;以及对准系统，该对准系统在衬底上的多个位置处测量衬底上的图案的特征的位置。 控制器将测量位置与值网格上的点进行比较，并基于栅格上对应的中间点的值来外推基板上的中间位置的值，以便提供基板上的中间位置及其相对位移的指示 到电网。 网格基于至少一个正交基函数，基板上的测量在对应于至少一个正交基函数的根值的位置处执行。

    Methods and scatterometers, lithographic systems, and lithographic processing cells
    4.
    发明授权
    Methods and scatterometers, lithographic systems, and lithographic processing cells 有权
    方法和散射仪，光刻系统和光刻处理单元

    公开(公告)号：US09081303B2

    公开(公告)日：2015-07-14

    申请号：US12846652

    申请日：2010-07-29

    申请人： Hugo Augustinus Joseph Cramer ,  Arie Jeffrey Den Boef ,  Henricus Johannes Lambertus Megens ,  Hendrik Jan Hidde Smilde ,  Adrianus Johannes Hendrikus Schellekens ,  Michael Kubis

    发明人： Hugo Augustinus Joseph Cramer ,  Arie Jeffrey Den Boef ,  Henricus Johannes Lambertus Megens ,  Hendrik Jan Hidde Smilde ,  Adrianus Johannes Hendrikus Schellekens ,  Michael Kubis

    IPC分类号： G03F7/20 ,  G01B11/24 ,  G01B11/30 ,  G01N21/47 ,  G01B11/02 ,  G01B11/22 ,  G01N21/88

    CPC分类号： G03F7/70641 ,  G01B11/02 ,  G01B11/22 ,  G01B11/24 ,  G01B11/30 ,  G01N21/47 ,  G01N21/88 ,  G03F7/70608 ,  G03F7/70625 ,  G03F7/70633 ,  G03F7/7065

    摘要： In a method of determining the focus of a lithographic apparatus used in a lithographic process on a substrate, the lithographic process is used to form a structure on the substrate, the structure having at least one feature which has an asymmetry in the printed profile which varies as a function of the focus of the lithographic apparatus on the substrate. A first image of the periodic structure is formed and detected while illuminating the structure with a first beam of radiation. The first image is formed using a first part of non-zero order diffracted radiation. A second image of the periodic structure is formed and detected while illuminating the structure with a second beam of radiation. The second image is formed using a second part of the non-zero order diffracted radiation which is symmetrically opposite to the first part in a diffraction spectrum. The ratio of the intensities of the measured first and second portions of the spectra is determined and used to determine the asymmetry in the profile of the periodic structure and/or to provide an indication of the focus on the substrate. In the same instrument, an intensity variation across the detected portion is determined as a measure of process-induced variation across the structure. A region of the structure with unwanted process variation can be identified and excluded from a measurement of the structure.

    摘要翻译： 在确定在基板上的光刻工艺中使用的光刻设备的焦点的方法中，使用光刻工艺在基板上形成结构，该结构具有至少一个特征，该特征在印刷图案中具有不对称性 作为光刻设备在基板上的焦点的函数。 在用第一辐射束照射结构的同时形成和检测周期性结构的第一图像。 第一图像使用非零阶衍射辐射的第一部分形成。 在用第二辐射束照射结构的同时形成和检测周期性结构的第二图像。 使用在衍射光谱中与第一部分对称相对的非零级衍射辐射的第二部分形成第二图像。 确定测量的第一和第二部分光谱的强度的比率并用于确定周期性结构的轮廓的不对称性和/或提供焦点在基底上的指示。 在相同的仪器中，被检测部分的强度变化被确定为整个结构的过程引起的变化的量度。 可以从结构的测量中识别并排除具有不期望的工艺变化的结构区域。

    Method and apparatus for overlay measurement
    5.
    发明授权
    Method and apparatus for overlay measurement 有权
    覆盖测量方法和装置

    公开(公告)号：US08982328B2

    公开(公告)日：2015-03-17

    申请号：US12906960

    申请日：2010-10-18

    申请人： Henricus Johannes Lambertus Megens ,  Johannes Anna Quaedackers ,  Christian Marinus Leewis ,  Peter Clement Paul Vanoppen

    发明人： Henricus Johannes Lambertus Megens ,  Johannes Anna Quaedackers ,  Christian Marinus Leewis ,  Peter Clement Paul Vanoppen

    IPC分类号： G03F7/20

    CPC分类号： G03F7/70466 ,  G03F7/705 ,  G03F7/70625 ,  G03F7/70633

    摘要： A method of measurement of at-resolution overlay offset may be implemented in a scatterometer. At least three targets are provided on a wafer, each target comprising a first marker grating and a second interleaved marker grating and each target having a different overlay bias between its first and second marker. The first and second markers are provided by subsequent lithography steps in a double patterning lithographic process. The targets are measured with a scatterometer and for each target a measured CD of at least one of the markers is determined using reconstruction. The CD of the first marker may be fixed in the reconstruction. The measured CDs and at least one of the overlay biases is used to determine an overlay result corresponding to a minimum measured CD. The overlay result may be determined by fitting a function such as a parabola to the measured CDs and the overlay biases and determining the overlay at the minimum of the fitted function.

    摘要翻译： 分辨率覆盖偏移的测量方法可以在散射仪中实现。 在晶片上提供至少三个靶，每个靶包括第一标记光栅和第二交错标记光栅，并且每个靶在其第一和第二标记之间具有不同的覆盖偏置。 第一和第二标记由双重图案化光刻工艺中的后续光刻步骤提供。 使用散射仪测量目标，并且对于每个目标，使用重建确定至少一个标记的测量CD。 第一个标记的CD可以在重建中被固定。 测量的CD和至少一个覆盖偏差用于确定对应于最小测量CD的覆盖结果。 覆盖结果可以通过将诸如抛物线的函数拟合到所测量的CD和覆盖偏移来确定，并且以最小的拟合函数确定覆盖。

    Device manufacturing method, mask and device
    7.
    发明申请
    Device manufacturing method, mask and device 审中-公开
    器件制造方法，掩模和器件

    公开(公告)号：US20070048626A1

    公开(公告)日：2007-03-01

    申请号：US11214058

    申请日：2005-08-30

    申请人： Henricus Johannes Lambertus Megens

    发明人： Henricus Johannes Lambertus Megens

    IPC分类号： G02B5/20

    CPC分类号： G03F9/7084 ,  G03F9/7076 ,  G03F9/708

    摘要： A method for use in manufacturing CCD or CMOS image sensors in which a substrate covered in a layer of colored radiation sensitive material has a patterned beam of radiation projected onto it. The patterned beam of radiation includes a pattern for forming device features in areas of a product die and a pattern for use in forming features of an alignment mark in other areas. This avoids the difficulty of aligning on alignment marks which are below a colored resist.

    摘要翻译： 一种用于制造CCD或CMOS图像传感器的方法，其中覆盖在彩色辐射敏感材料层中的基底具有投影到其上的图案化的辐射束。 图案化的辐射束包括用于在产品模具的区域中形成装置特征的图案和用于形成其它区域中的对准标记的特征的图案。 这避免了在着色抗蚀剂下面的对准标记对准的困难。

    Method, inspection apparatus and substrate for determining an approximate structure of an object on a substrate
    9.
    发明授权
    Method, inspection apparatus and substrate for determining an approximate structure of an object on a substrate 有权
    用于确定基板上的物体的近似结构的方法，检查装置和基板

    公开(公告)号：US08390823B2

    公开(公告)日：2013-03-05

    申请号：US12884107

    申请日：2010-09-16

    申请人： Hugo Augustinus Joseph Cramer ,  Henricus Johannes Lambertus Megens

    发明人： Hugo Augustinus Joseph Cramer ,  Henricus Johannes Lambertus Megens

    IPC分类号： G01B11/24

    CPC分类号： G03F1/84 ,  G03F7/70625

    摘要： A system and method determine an approximate structure of an object on a substrate. This may be applied in model based metrology of microscopic structures to assess critical dimension or overlay performance of a lithographic apparatus. A scatterometer is used to determine approximate structure of an object, such as a grating on a stack, on a substrate. The wafer substrate has an upper layer and an underlying layer. The substrate has a first scatterometry target region, including the grating on a stack object. The grating on a stack is made up of the upper and underlying layers. The upper layer is patterned with a periodic grating. The substrate further has a neighboring second scatterometry target region, where the upper layer is absent. The second region has just the unpatterned underlying layers.

    摘要翻译： 系统和方法确定基板上的物体的近似结构。 这可以应用于基于模型的微观结构计量学以评估光刻设备的临界尺寸或覆盖性能。 散射仪用于确定物体的近似结构，例如堆叠上的光栅，在衬底上。 晶片衬底具有上层和下层。 衬底具有包括堆叠物体上的光栅的第一散射测量目标区域。 堆叠上的光栅由上层和下层组成。 上层用周期性光栅图案化。 衬底还具有相邻的第二散射测量目标区域，其中上层不存在。 第二个地区只是没有图案的下层。

    Method, Inspection Apparatus and Substrate for Determining an Approximate Structure of an Object on a Substrate
    10.
    发明申请
    Method, Inspection Apparatus and Substrate for Determining an Approximate Structure of an Object on a Substrate 有权
    方法，检查装置和基板，用于确定基板上物体的近似结构

    公开(公告)号：US20110085176A1

    公开(公告)日：2011-04-14

    申请号：US12884107

    申请日：2010-09-16

    申请人： Hugo Augustinus Joseph Cramer ,  Henricus Johannes Lambertus Megens

    发明人： Hugo Augustinus Joseph Cramer ,  Henricus Johannes Lambertus Megens

    IPC分类号： G01B11/24

    CPC分类号： G03F1/84 ,  G03F7/70625

    摘要： A system and method determine an approximate structure of an object on a substrate. This may be applied in model based metrology of microscopic structures to assess critical dimension or overlay performance of a lithographic apparatus. A scatterometer is used to determine approximate structure of an object, such as a grating on a stack, on a substrate. The wafer substrate has an upper layer and an underlying layer. The substrate has a first scatterometry target region, including the grating on a stack object. The grating on a stack is made up of the upper and underlying layers. The upper layer is patterned with a periodic grating. The substrate further has a neighboring second scatterometry target region, where the upper layer is absent. The second region has just the unpatterned underlying layers.

    摘要翻译： 系统和方法确定基板上的物体的近似结构。 这可以应用于基于模型的微观结构计量学以评估光刻设备的临界尺寸或覆盖性能。 散射仪用于确定物体的近似结构，例如堆叠上的光栅，在衬底上。 晶片衬底具有上层和下层。 衬底具有包括堆叠物体上的光栅的第一散射测量目标区域。 堆叠上的光栅由上层和下层组成。 上层用周期性光栅图案化。 衬底还具有相邻的第二散射测量目标区域，其中上层不存在。 第二个地区只是没有图案的下层。