CHEMICAL MECHANICAL POLISHING PAD FOR CONTROLLING POLISHING SLURRY DISTRIBUTION
    2.
    发明申请
    CHEMICAL MECHANICAL POLISHING PAD FOR CONTROLLING POLISHING SLURRY DISTRIBUTION 有权
    用于控制抛光浆料分布的化学机械抛光垫

    公开(公告)号:US20060160478A1

    公开(公告)日:2006-07-20

    申请号:US11036903

    申请日:2005-01-14

    IPC分类号: B24B29/00

    CPC分类号: B24B37/26

    摘要: A polishing pad for a chemical mechanical polishing apparatus has a body with a polishing surface having a radius, a central region, and a peripheral region. The polishing surface has a plurality of main radial-line channels extending radially outwardly from the central region to the peripheral region, each main radial-line channel having an angled outer segment at the peripheral region that is directed at an angle relative to a radius of the polishing surface. The polishing surface also has a plurality of primary tributary radial-line channels that are each connected by an angled transition segment to a main radial-line channel, the tributary radial-line channels being spaced apart from the main radial-line channels. The polishing pad provides an improved distribution and flow of polishing slurry during a polishing process.

    摘要翻译: 用于化学机械抛光装置的抛光垫具有具有半径,中心区域和周边区域的抛光表面的主体。 抛光表面具有从中心区域径向向外延伸到周边区域的多个主径向线通道,每个主径向线通道在周边区域具有成角度的外部段,该外部区域相对于 抛光面。 抛光表面还具有多个第一支流径向通道,每个主支流径向通道通过成角度的过渡段连接到主径向线通道,支流径向通道与主径向通道间隔开。 抛光垫在抛光过程中提供了改进的抛光浆料的分布和流动。

    Removal of silicon oxycarbide from substrates
    3.
    发明授权
    Removal of silicon oxycarbide from substrates 失效
    从底物中除去碳氧化硅

    公开(公告)号:US07659206B2

    公开(公告)日:2010-02-09

    申请号:US11359301

    申请日:2006-02-21

    CPC分类号: H01L21/31111 H01L21/02079

    摘要: A method of treating a substrate comprises depositing silicon oxycarbide on the substrate and removing the silicon oxycarbide from the substrate. The silicon oxycarbide on the substrate is decarbonized by exposure to an energized oxygen-containing gas that heats the substrate and converts the layer of silicon oxycarbide into a layer of silicon oxide. The silicon oxide is removed by exposure to a plasma of fluorine-containing process gas. Alternatively, the remaining silicon oxide can be removed by a fluorine-containing acidic bath. In yet another version, a plasma of a fluorine-containing gas and an oxygen-containing gas is energized to remove the silicon oxycarbide from the substrate.

    摘要翻译: 处理衬底的方法包括在衬底上沉积碳氧化硅并从衬底去除碳氧化硅。 衬底上的碳氧化硅通过暴露于加热基底的通电含氧气体而脱碳,并将碳氧化硅层转化为氧化硅层。 通过暴露于含氟工艺气体的等离子体来除去氧化硅。 或者,剩余的氧化硅可以通过含氟酸性浴除去。 在另一个版本中,赋予含氟气体和含氧气体的等离子体以从基底去除碳氧化硅。

    Removal of silicon oxycarbide from substrates
    4.
    发明申请
    Removal of silicon oxycarbide from substrates 失效
    从底物中除去碳氧化硅

    公开(公告)号:US20060240675A1

    公开(公告)日:2006-10-26

    申请号:US11359301

    申请日:2006-02-21

    IPC分类号: H01L21/302 H01L21/461

    CPC分类号: H01L21/31111 H01L21/02079

    摘要: A method of treating a substrate comprises depositing silicon oxycarbide on the substrate and removing the silicon oxycarbide from the substrate. The silicon oxycarbide on the substrate is decarbonized by exposure to an energized oxygen-containing gas that heats the substrate and converts the layer of silicon oxycarbide into a layer of silicon oxide. The silicon oxide is removed by exposure to a plasma of fluorine-containing process gas. Alternatively, the remaining silicon oxide can be removed by a fluorine-containing acidic bath. In yet another version, a plasma of a fluorine-containing gas and an oxygen-containing gas is energized to remove the silicon oxycarbide from the substrate.

    摘要翻译: 处理衬底的方法包括在衬底上沉积碳氧化硅并从衬底去除碳氧化硅。 衬底上的碳氧化硅通过暴露于加热基底的通电含氧气体而脱碳,并将碳氧化硅层转化为氧化硅层。 通过暴露于含氟工艺气体的等离子体来除去氧化硅。 或者,剩余的氧化硅可以通过含氟酸性浴除去。 在另一个版本中,赋予含氟气体和含氧气体的等离子体以从基底去除碳氧化硅。

    POLISHING PAD CONDITIONER WITH SHAPED ABRASIVE PATTERNS AND CHANNELS
    5.
    发明申请
    POLISHING PAD CONDITIONER WITH SHAPED ABRASIVE PATTERNS AND CHANNELS 有权
    抛光垫调节器与形状磨砂图案和通道

    公开(公告)号:US20060079160A1

    公开(公告)日:2006-04-13

    申请号:US10962890

    申请日:2004-10-12

    IPC分类号: B24B29/00

    CPC分类号: B24B53/017 B24B53/12

    摘要: A polishing pad conditioner comprises a base and a pad conditioning face on the base. The conditioning face comprises central and peripheral regions. Abrasive spokes having a substantially constant width of abrasive particles, extend from the central to the peripheral region. The spokes are symmetric and radially spaced apart from one another, and may have a variety of shapes. The conditioning face can also have a cutout inlet channel to receive polishing slurry when the conditioning face is rubbed against a polishing pad, a conduit to receive the polishing slurry from the cutout inlet channel, and an outlet on the peripheral edge of the base to discharge the received polishing slurry.

    摘要翻译: 抛光垫调节器包括底座和底座上的垫调节面。 调理面包括中央和周边区域。 具有基本恒定的磨料颗粒宽度的研磨轮辐从中心延伸到周边区域。 轮辐是对称的并且彼此径向间隔开,并且可以具有各种形状。 调理面还可以具有切口入口通道,用于在将调理面摩擦抛光垫时接收抛光浆料,从切口入口通道接收抛光浆料的导管,以及在基部周边的出口排出 接收的抛光浆料。