公开(公告)号：US6017828A

公开(公告)日：2000-01-25

申请号：US861172

申请日：1997-05-21

申请人： Hung-Che Liao ,  Hsien-Wei Chin ,  Chih-Ming Chen

发明人： Hung-Che Liao ,  Hsien-Wei Chin ,  Chih-Ming Chen

IPC分类号： H01L21/768 ,  H01L21/8244 ,  H01L21/322

CPC分类号： H01L27/11 ,  H01L21/768 ,  Y10S257/903 ,  Y10S257/904 ,  Y10S438/928

摘要： The present invention is a method for preventing backside polysilicon peeling in 4T+2R SRAM process. This invention utilizes forming oxide cap layer on the backside of the wafer to protect the backside polysilicon. Thus, the backside polysilicon is free from peeling and damage.

摘要翻译： 本发明是防止4T + 2R SRAM工艺中背面多晶硅剥离的方法。 本发明利用晶片背面的形成氧化物盖层来保护背面多晶硅。 因此，背面多晶硅没有剥离和损坏。

公开(公告)号：US07016029B2

公开(公告)日：2006-03-21

申请号：US10167162

申请日：2002-06-11

申请人： Hung-Chih Chen ,  Chao-Hsiung Wang ,  Niahn-Mauh Shih ,  Hsien-Wei Chin

发明人： Hung-Chih Chen ,  Chao-Hsiung Wang ,  Niahn-Mauh Shih ,  Hsien-Wei Chin

IPC分类号： G01N21/00

CPC分类号： G03F7/7065 ,  G01N21/47 ,  G01N21/9501 ,  G03F7/70808 ,  G03F7/70941 ,  G03F7/70958

摘要： Detecting decay of equipment lens anti-reflective coating (ARC) by detecting undesired residue is disclosed. The undesired residue detected correlates with the decay of the ARC, where a greater amount of undesired residue detected indicates a greater level of the decay. The undesired residue is detected due to stray light reflected by the ARC because of its decay. In the context of semiconductor fabrication equipment, photoresist residue results from negative photoresist on a semiconductor wafer, and may be viewed on one or more scribe lines of a mask within a field of view of the lens of the semiconductor fabrication equipment.

公开(公告)号：US20090023255A1

公开(公告)日：2009-01-22

申请号：US11778558

申请日：2007-07-16

申请人： Yu-Hsiung Wang ,  Wen-Ting Chu ,  Eric Chen ,  Hsien-Wei Chin

发明人： Yu-Hsiung Wang ,  Wen-Ting Chu ,  Eric Chen ,  Hsien-Wei Chin

IPC分类号： H01L21/336

CPC分类号： H01L29/7833 ,  H01L21/76224

摘要： A method for making a semiconductor device by reshaping a silicon surface with a sacrificial layer is presented. In the present invention the steps of forming a sacrificial dielectric layer and removing the sacrificial dielectric layer are repeated multiple times in order to remove sharp edges from the silicon surface near the field oxides. Another aspect of the present invention includes making a MOSFET transistor that incorporates the forming and removing of multiple sacrificial layers into the process.

摘要翻译： 提出了一种通过用牺牲层重塑硅表面来制造半导体器件的方法。 在本发明中，形成牺牲电介质层和去除牺牲电介质层的步骤被重复多次，以便从场氧化物附近的硅表面去除尖锐的边缘。 本发明的另一方面包括制造一种MOSFET晶体管，其将多个牺牲层的形成和去除结合到该工艺中。

公开(公告)号：US5646057A

公开(公告)日：1997-07-08

申请号：US524153

申请日：1995-09-01

申请人： Chwen-Ming Liu ,  Jenn-Ming Huang ,  Hsien-Wei Chin ,  Huan-Chung You ,  Jang-Cheng Hsieh

发明人： Chwen-Ming Liu ,  Jenn-Ming Huang ,  Hsien-Wei Chin ,  Huan-Chung You ,  Jang-Cheng Hsieh

IPC分类号： H01L21/28 ,  H01L21/8234

CPC分类号： H01L21/28176 ,  H01L21/8234 ,  Y10S148/003 ,  Y10S438/91

摘要： A method is provided for improving the performance characteristics of the MOS devices contained within an integrated circuit that has been subjected to a rapid thermal anneal. After the rapid thermal anneal the integrated circuit is heated for more than about 30 minutes at a temperature of more than about 430.degree. C. in a gaseous atmosphere that contains hydrogen, typically forming gas.

摘要翻译： 提供了一种用于改善包含在经受快速热退火的集成电路中的MOS器件的性能特性的方法。 在快速热退火之后，在含有氢的气体气氛（通常形成气体）中，在大于约430℃的温度下将集成电路加热超过约30分钟。

公开(公告)号：US08124494B2

公开(公告)日：2012-02-28

申请号：US11778558

申请日：2007-07-16

申请人： Yu-Hsiung Wang ,  Wen-Ting Chu ,  Eric Chen ,  Hsien-Wei Chin

发明人： Yu-Hsiung Wang ,  Wen-Ting Chu ,  Eric Chen ,  Hsien-Wei Chin

IPC分类号： H01L21/76

CPC分类号： H01L29/7833 ,  H01L21/76224

摘要： A method for making a semiconductor device by reshaping a silicon surface with a sacrificial layer is presented. In the present invention the steps of forming a sacrificial dielectric layer and removing the sacrificial dielectric layer are repeated multiple times in order to remove sharp edges from the silicon surface near the field oxides. Another aspect of the present invention includes making a MOSFET transistor that incorporates the forming and removing of multiple sacrificial layers into the process.

摘要翻译： 提出了一种通过用牺牲层重塑硅表面来制造半导体器件的方法。 在本发明中，形成牺牲电介质层和去除牺牲电介质层的步骤被重复多次，以便从场氧化物附近的硅表面去除尖锐的边缘。 本发明的另一方面包括制造一种MOSFET晶体管，其将多个牺牲层的形成和去除结合到该工艺中。

公开(公告)号：US08253206B2

公开(公告)日：2012-08-28

申请号：US13221654

申请日：2011-08-30

申请人： Yu-Hsiung Wang ,  Wen-Ting Chu ,  Eric Chen ,  Hsien-Wei Chin

发明人： Yu-Hsiung Wang ,  Wen-Ting Chu ,  Eric Chen ,  Hsien-Wei Chin

IPC分类号： H01L21/70

CPC分类号： H01L29/7833 ,  H01L21/76224

摘要： A method for making a semiconductor device by reshaping a silicon surface with a sacrificial layer is presented. In the present invention the steps of forming a sacrificial dielectric layer and removing the sacrificial dielectric layer are repeated multiple times in order to remove sharp edges from the silicon surface near the field oxides. Another aspect of the present invention includes making a MOSFET transistor that incorporates the forming and removing of multiple sacrificial layers into the process.

公开(公告)号：US20110309417A1

公开(公告)日：2011-12-22

申请号：US13221654

申请日：2011-08-30

申请人： Yu-Hsiung Wang ,  Wen-Ting Chu ,  Eric Chen ,  Hsien-Wei Chin

发明人： Yu-Hsiung Wang ,  Wen-Ting Chu ,  Eric Chen ,  Hsien-Wei Chin

IPC分类号： H01L29/78 ,  H01L29/06

CPC分类号： H01L29/7833 ,  H01L21/76224

摘要： A method for making a semiconductor device by reshaping a silicon surface with a sacrificial layer is presented. In the present invention the steps of forming a sacrificial dielectric layer and removing the sacrificial dielectric layer are repeated multiple times in order to remove sharp edges from the silicon surface near the field oxides. Another aspect of the present invention includes making a MOSFET transistor that incorporates the forming and removing of multiple sacrificial layers into the process.

摘要翻译： 提出了一种通过用牺牲层重塑硅表面来制造半导体器件的方法。 在本发明中，形成牺牲电介质层和去除牺牲电介质层的步骤被重复多次，以便从场氧化物附近的硅表面去除尖锐的边缘。 本发明的另一方面包括制造一种MOSFET晶体管，其将多个牺牲层的形成和去除结合到该工艺中。