摘要:
An anti-interference antenna of a wireless tire pressure receiver has an insulating cable having a main casing and a sub-casing connected side by side with the main casing. The main casing has a power cable longitudinally mounted through the main casing. The sub-casing has an antenna longitudinally mounted through the sub-casing. As the antenna is individually sleeved by the insulating sub-casing, the antenna and the power cables are isolated to prevent from interfering with each other. Besides, the insulating cable further has at least one air channel longitudinally formed through the corresponding cable and mounted with a metal layer on an inner wall of the air channel, around the power cable, around each of power wires in the power cable, or around the power cable and the air channel, and filled with an EMI-shielding matter to further isolate the antenna and the power cables.
摘要:
A wireless tire pressure monitoring device has a detecting device and an air tap bonded to the detecting device. The detecting device has a flat box, in which an emitting circuit board is received, and a lid to close the box, and the air tap has a tube, a cover on a free end of the tube and a bolt, in which air flows, to secure an end the tube on a middle section of the box of the detecting device, such that the detecting device and the air tap are mounted between a rim and a tire. An aerial is embedded in the box of the detecting device to combine the aerial and the box as a single element.
摘要:
An anti-interference antenna of a wireless tire pressure receiver has an insulating cable having a main casing and a sub-casing connected side by side with the main casing. The main casing has a power cable longitudinally mounted through the main casing. The sub-casing has an antenna longitudinally mounted through the sub-casing. As the antenna is individually sleeved by the insulating sub-casing, the antenna and the power cables are isolated to prevent from interfering with each other. Besides, the insulating cable further has at least one air channel longitudinally formed through the corresponding cable and mounted with a metal layer on an inner wall of the air channel, around the power cable, around each of power wires in the power cable, or around the power cable and the air channel, and filled with an EMI-shielding matter to further isolate the antenna and the power cables.
摘要:
A tire pressure detecting valve stem has a case, a body and a tire pressure detector. The case is rectangular and has an inner surface. The body is a valve stem and is integrally and transversely mounted on the case and has an inner section and a center pin. The inner section is integrally mounted in the case. The center pin is conductive, is coaxially mounted in the inner section and protrudes from the inner surface of the case. The tire pressure detector corresponds to and is mounted on the inner surface and is electronically connected to the center pin. Because the case is integrally and compactly mounted on the inner section of the body, the case will be mounted on and stay close to a rim when the body is mounted through the rim.
摘要:
A manufacturing method of a semiconductor device is disclosed in the present invention. First, at least one gate structure and plurality of source/drain regions on a substrate are formed, a dielectric layer is then formed on the substrate, a first contact hole and a second contact hole are formed in the dielectric layer, respectively on the gate structure and the source/drain region, and a third contact hole is formed in the dielectric layer, wherein the third contact hole overlaps the first contact hole and the second contact hole.
摘要:
An exemplary liquid crystal display device (200) includes a liquid crystal display panel (21), and a flexible printed circuit (2) joined to the liquid crystal display panel. The flexible printed circuit includes a substrate (20). The substrate includes a plurality of first conductive lines (210) and second conductive lines (230). The first conductive lines include a plurality of first patches (220). The second conductive lines include a plurality of second patches (240). The first patches are arranged side by side oppositely oriented relative to each other in alternating fashion. The second patches are arranged side by side oppositely oriented relative to each other in alternating fashion.
摘要:
A manufacturing method of a semiconductor device is disclosed in the present invention. First, at least one gate structure and plurality of source/drain regions on a substrate are formed, a dielectric layer is then formed on the substrate, a first contact hole and a second contact hole are formed in the dielectric layer, respectively on the gate structure and the source/drain region, and a third contact hole is formed in the dielectric layer, wherein the third contact hole overlaps the first contact hole and the second contact hole.
摘要:
A method for forming a dielectric layer free of voids is disclosed. First, a substrate, a first stressed layer including a recess, a second stressed layer disposed on the first stressed layer and covering the recess and a patterned photoresist embedded in the recess are provided. Second, a first etching step is performed to totally remove the photoresist so that the remaining second stressed layer forms at least one protrusion adjacent to the recess. Then, a trimming photoresist is formed without exposure to fill the recess and to cover the protrusion. Later, a trimming etching step is performed to eliminate the protrusion and to collaterally remove the trimming photoresist.
摘要:
A method for fabricating an aperture is disclosed. The method includes the steps of: forming a hard mask containing carbon on a surface of a semiconductor substrate; and using a non-oxygen element containing gas to perform a first etching process for forming a first aperture in the hard mask.
摘要:
A method for fabricating MOS transistor includes the steps of: overlapping a second stress layer on an etching stop layer and a first stress layer at a boundary region of the substrate; forming a dielectric layer on the first stress layer and the second stress layer; performing a first etching process to partially remove the dielectric layer for exposing a portion of the second stress layer at the boundary region; performing a second etching process to partially remove the exposed portion of the second stress layer for exposing the etching stop layer; performing a third etching process to partially remove the exposed portion of the etching stop layer for exposing the first stress layer at the boundary region; and performing a fourth etching process partially remove the exposed portion of the first stress layer.