摘要:
In a method of manufacturing a ferroelectric capacitor, a lower electrode layer is formed on a substrate. The lower electrode layer includes at least one lower electrode film. A ferroelectric layer is formed on the lower electrode layer, and then an upper electrode layer is formed on the ferroelectric layer. A hard mask structure is formed on the upper electrode layer. The hard mask structure includes a first hard mask and a second hard mask. An upper electrode, a ferroelectric layer pattern and a lower electrode are formed by partially etching the upper electrode layer, the ferroelectric layer and the lower electrode layer using the hard mask structure. The hard mask structure may prevent damage to the ferroelectric layer and may enlarge an effective area of the ferroelectric capacitor so that the ferroelectric capacitor may have enhanced electrical and ferroelectric characteristics.
摘要:
Disclosed are a semiconductor device and a related method of manufacture. The semiconductor device comprises a semiconductor substrate, a conductive structure including contact regions and gate structures formed on the semiconductor substrate, a protection layer formed on the gate structures, an insulation layer formed on the protection layer, and a plurality of contacts directly contacting the contact regions and the semiconductor substrate through the insulation layer, wherein the contacts have substantially different heights from each other.
摘要:
Disclosed are a semiconductor device and a related method of manufacture. The semiconductor device comprises a semiconductor substrate, a conductive structure including contact regions and gate structures formed on the semiconductor substrate, a protection layer formed on the gate structures, an insulation layer formed on the protection layer, and a plurality of contacts directly contacting the contact regions and the semiconductor substrate through the insulation layer, wherein the contacts have substantially different heights from each other.
摘要:
A solar cell includes a semiconductor substrate having a plurality of contact holes penetrating therethrough, from one surface to the opposing surface and including a part having a first conductive layer selected from p-type and n-type and a part having a second conductive layer different from the first conductive layer and selected from p-type and n-type semiconductor, a first electrode formed on one surface of the semiconductor substrate and electrically connected with the part having the first conductive layer, a second electrode formed on the other surface of the semiconductor substrate and electrically connected with the first electrode, and a third electrode formed on the same surface as in the second electrode and electrically connected with the part having the second conductive layer of the semiconductor substrate, wherein the plurality of contact holes form a contact hole group, and the first electrode and the second electrode are connected through one or more of the plurality of contact holes of the contact hole group.
摘要:
A method of manufacturing a solar cell includes providing a semiconductor substrate; disposing a reflection layer on one side of the semiconductor substrate, wherein the disposing the reflection layer comprises implanting gas into a surface of the one side of the semiconductor substrate and heating the gas; disposing an n+ region and a p+ region separated from each other on the other opposite facing side of the semiconductor substrate; disposing a first electrode connected to the n+ region; and disposing a second electrode connected to the p+ region.
摘要:
A method of forming a ferroelectric device includes forming a ferroelectric pattern on a substrate, the ferroelectric pattern including a ferroelectric material including titanium and oxygen, forming an insulating layer on the ferroelectric pattern, and planarizing the insulating layer using a slurry until the ferroelectric pattern is exposed, wherein the ferroelectric pattern serves as a polishing stop pattern and the slurry includes ceria.