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    Methods of forming a pattern of a semiconductor device
    1.
    发明授权
    Methods of forming a pattern of a semiconductor device 失效
    形成半导体器件的图案的方法

    公开(公告)号：US07964332B2

    公开(公告)日：2011-06-21

    申请号：US12339863

    申请日：2008-12-19

    申请人： Hyo-Jin Yun ,  Young-Ho Kim ,  Boo-Deuk Kim ,  Ji-Man Park ,  Jin-A Ryu ,  Jae-Hee Choi

    发明人： Hyo-Jin Yun ,  Young-Ho Kim ,  Boo-Deuk Kim ,  Ji-Man Park ,  Jin-A Ryu ,  Jae-Hee Choi

    IPC分类号： G03F7/00 ,  G03F7/004 ,  G03F7/11 ,  G03F7/26

    CPC分类号： G03F7/091 ,  G03F7/038 ,  Y10S430/106 ,  Y10S430/114 ,  Y10S430/128

    摘要： In polymers for an anti-reflective coating, compositions for an anti-reflective coating and methods of forming a pattern of a semiconductor device using the same, the compositions for an anti-reflective coating include a polymer that includes a first repeating unit having a basic side group, a second repeating unit having a light-absorbing group, and a third repeating unit having a cross-linkable group; a photoacid generator; a cross-linking agent; and a solvent. The polymer for the anti-reflective coating, which may have a basic side group chemically bound to a backbone of the polymer, may properly adjust diffusion of an acid in an anti-reflective coating layer to improve the profile of a pattern.

    摘要翻译： 在用于抗反射涂层的聚合物中，用于抗反射涂层的组合物和使用其形成半导体器件的图案的方法，用于抗反射涂层的组合物包括聚合物，其包括具有碱性 具有光吸收基团的第二重复单元和具有可交联基团的第三重复单元; 光致酸发生器; 交联剂; 和溶剂。 用于抗反射涂层的聚合物可以具有与聚合物的骨架化学结合的碱性侧基，可以适当地调节抗反射涂层中的酸的扩散以改善图案的轮廓。

    Methods of forming a pattern using photoresist compositions
    9.
    发明授权
    Methods of forming a pattern using photoresist compositions 有权
    使用光致抗蚀剂组合物形成图案的方法

    公开(公告)号：US08247162B2

    公开(公告)日：2012-08-21

    申请号：US12662455

    申请日：2010-04-19

    申请人： Ji-Man Park ,  Young-Ho Kim ,  Hyo-Jin Yun ,  Sun-Yul Ahn ,  Song-Se Yi ,  Kyung-Woo Park

    发明人： Ji-Man Park ,  Young-Ho Kim ,  Hyo-Jin Yun ,  Sun-Yul Ahn ,  Song-Se Yi ,  Kyung-Woo Park

    IPC分类号： G03F7/004 ,  G03F7/30

    CPC分类号： G03F7/0048 ,  G03F7/0046 ,  G03F7/0392

    摘要： A method of forming a pattern and a photoresist composition, the method including forming a photoresist film on a substrate by coating a photoresist composition thereon, the photoresist composition including a polymerized photoresist additive, a polymer including an acid-labile protective group at a side chain, a photoacid generator, and a solvent; exposing the photoresist film; and forming a photoresist pattern by developing the photoresist film using an aqueous alkali developer, wherein the polymerized photoresist additive includes a hydrophilic repeating unit having an aliphatic hydrocarbon backbone and a side chain containing an oxygen heteroatom in a heterocyclic ring substituted with at least three hydroxyl groups, and a hydrophobic repeating unit having an aliphatic hydrocarbon backbone and a side chain containing a fluorinated aliphatic hydrocarbon group.

    摘要翻译： 一种形成图案和光致抗蚀剂组合物的方法，所述方法包括通过在其上涂覆光致抗蚀剂组合物在基底上形成光致抗蚀剂膜，光致抗蚀剂组合物包括聚合的光致抗蚀剂添加剂，在侧链上包含酸不稳定保护基的聚合物 ，光致酸发生剂和溶剂; 曝光光刻胶膜; 以及通过使用含水碱性显影剂显影所述光致抗蚀剂膜来形成光致抗蚀剂图案，其中所述聚合的光致抗蚀剂添加剂包括具有脂族烃骨架的亲水性重复单元和在至少三个羟基取代的杂环中含有氧杂原子的侧链 ，以及具有脂肪族烃主链和含有氟化脂肪族烃基的侧链的疏水性重复单元。

    Methods of forming a pattern using photoresist compositions
    10.
    发明申请
    Methods of forming a pattern using photoresist compositions 有权
    使用光致抗蚀剂组合物形成图案的方法

    公开(公告)号：US20100266966A1

    公开(公告)日：2010-10-21

    申请号：US12662455

    申请日：2010-04-19

    申请人： Ji-Man Park ,  Young-Ho Kim ,  Hyo-Jin Yun ,  Sun-Yul Ahn ,  Song-Se Yi ,  Kyung-Woo Park

    发明人： Ji-Man Park ,  Young-Ho Kim ,  Hyo-Jin Yun ,  Sun-Yul Ahn ,  Song-Se Yi ,  Kyung-Woo Park

    IPC分类号： G03F7/20

    CPC分类号： G03F7/0048 ,  G03F7/0046 ,  G03F7/0392

    摘要： A method of forming a pattern and a photoresist composition, the method including forming a photoresist film on a substrate by coating a photoresist composition thereon, the photoresist composition including a polymerized photoresist additive, a polymer including an acid-labile protective group at a side chain, a photoacid generator, and a solvent; exposing the photoresist film; and forming a photoresist pattern by developing the photoresist film using an aqueous alkali developer, wherein the polymerized photoresist additive includes a hydrophilic repeating unit having an aliphatic hydrocarbon backbone and a side chain containing an oxygen heteroatom in a heterocyclic ring substituted with at least three hydroxyl groups, and a hydrophobic repeating unit having an aliphatic hydrocarbon backbone and a side chain containing a fluorinated aliphatic hydrocarbon group.

    摘要翻译： 一种形成图案和光致抗蚀剂组合物的方法，所述方法包括通过在其上涂覆光致抗蚀剂组合物在基底上形成光致抗蚀剂膜，光致抗蚀剂组合物包括聚合的光致抗蚀剂添加剂，在侧链上包含酸不稳定保护基的聚合物 ，光致酸发生剂和溶剂; 曝光光刻胶膜; 以及通过使用含水碱性显影剂显影所述光致抗蚀剂膜来形成光致抗蚀剂图案，其中所述聚合的光致抗蚀剂添加剂包括具有脂族烃骨架的亲水性重复单元和在至少三个羟基取代的杂环中含有氧杂原子的侧链 ，以及具有脂肪族烃主链和含有氟化脂肪族烃基的侧链的疏水性重复单元。