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1.发明授权Siloxane compound, photoresist composition including the siloxane compound and method of forming a pattern using the photoresist composition 失效硅氧烷化合物，包含硅氧烷化合物的光致抗蚀剂组合物和使用光致抗蚀剂组合物形成图案的方法公开(公告)号：US07485407B2
公开(公告)日：2009-02-03
申请号：US11640172
申请日：2006-12-18
申请人： Hyo-Jin Yun , Jae-Ho Kim , Young-Ho Kim , Boo-Deuk Kim , Do-Young Kim
发明人： Hyo-Jin Yun , Jae-Ho Kim , Young-Ho Kim , Boo-Deuk Kim , Do-Young Kim
CPC分类号： G03F7/0757 , C07F7/21 , G03F7/0045 , G03F7/0397 , G03F7/0755 , Y10S430/115 , Y10S430/122 , Y10S430/126 , Y10S430/146 , Y10S430/167
摘要： Disclosed are a siloxane compound, a photoresist composition using the same, and a method of forming a pattern, wherein the siloxane compound is having a general formula: wherein R1 is a tertiary butyl group or a 1-(tert-butoxy)ethyl group, and R2 and R3 is each independently a lower alkyl group having 1 to 4 carbon atoms.
摘要翻译： 公开了硅氧烷化合物，使用其的光致抗蚀剂组合物和形成图案的方法，其中硅氧烷化合物具有以下通式：其中R1是叔丁基或1-（叔丁氧基）乙基， 并且R 2和R 3各自独立地为具有1至4个碳原子的低级烷基。
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2.发明申请Siloxane compound, photoresist composition including the siloxane compound and method of forming a pattern using the photoresist composition 失效硅氧烷化合物，包含硅氧烷化合物的光致抗蚀剂组合物和使用光致抗蚀剂组合物形成图案的方法公开(公告)号：US20070148590A1
公开(公告)日：2007-06-28
申请号：US11640172
申请日：2006-12-18
申请人： Hyo-Jin Yun , Jae-Ho Kim , Young-Ho Kim , Boo-Deuk Kim , Do-Young Kim
发明人： Hyo-Jin Yun , Jae-Ho Kim , Young-Ho Kim , Boo-Deuk Kim , Do-Young Kim
IPC分类号： G03C1/00
CPC分类号： G03F7/0757 , C07F7/21 , G03F7/0045 , G03F7/0397 , G03F7/0755 , Y10S430/115 , Y10S430/122 , Y10S430/126 , Y10S430/146 , Y10S430/167
摘要： Disclosed are a siloxane compound, a photoresist composition using the same, and a method of forming a pattern, wherein the siloxane compound is having a general formula: wherein R1 is a tertiary butyl group or a 1-(tert-butoxy)ethyl group, and R2 and R3 is each independently a lower alkyl group having 1 to 4 carbon atoms.
摘要翻译： 公开了硅氧烷化合物，使用其的光致抗蚀剂组合物和形成图案的方法，其中硅氧烷化合物具有以下通式：其中R1是叔丁基或1-（叔丁氧基）乙基， 并且R 2和R 3各自独立地为具有1至4个碳原子的低级烷基。
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3.发明授权公开(公告)号：US07491484B2
公开(公告)日：2009-02-17
申请号：US11869933
申请日：2007-10-10
申请人： Hyo-Jin Yun , Young-Gil Kwon , Do-Young Kim , Jae-Ho Kim , Young-Ho Kim , Boo-Deuk Kim
发明人： Hyo-Jin Yun , Young-Gil Kwon , Do-Young Kim , Jae-Ho Kim , Young-Ho Kim , Boo-Deuk Kim
CPC分类号： G03F7/0045 , G03F7/0046 , G03F7/0392 , Y10S430/111 , Y10S430/122 , Y10S430/123
摘要： In a photoresist composition and a method of forming a pattern using the same, the photoresist composition includes about 0.1 to about 0.5 percent by weight of a photoacid generator including a positively charged sulfonium ion and a negatively charged sulfonate ion having a hydrophilic carboxylic group, about 4 to about 10 percent by weight of a resin, and a solvent.
摘要翻译： 在光致抗蚀剂组合物和使用其形成图案的方法中，光致抗蚀剂组合物包含约0.1至约0.5重量％的包含带正电荷的锍离子的光酸产生剂和具有亲水性羧基的带负电荷的磺酸根离子，约为 4至约10重量％的树脂和溶剂。
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4.发明申请公开(公告)号：US20080160448A1
公开(公告)日：2008-07-03
申请号：US11869933
申请日：2007-10-10
申请人： Hyo-Jin Yun , Young-Gil Kwon , Do-Young Kim , Jae-Ho Kim , Young-Ho Kim , Boo-Deuk Kim
发明人： Hyo-Jin Yun , Young-Gil Kwon , Do-Young Kim , Jae-Ho Kim , Young-Ho Kim , Boo-Deuk Kim
CPC分类号： G03F7/0045 , G03F7/0046 , G03F7/0392 , Y10S430/111 , Y10S430/122 , Y10S430/123
摘要： In a photoresist composition and a method of forming a pattern using the same, the photoresist composition includes about 0.1 to about 0.5 percent by weight of a photoacid generator including a positively charged sulfonium ion and a negatively charged sulfonate ion having a hydrophilic carboxylic group, about 4 to about 10 percent by weight of a resin, and a solvent.
摘要翻译： 在光致抗蚀剂组合物和使用其形成图案的方法中，光致抗蚀剂组合物包含约0.1至约0.5重量％的包含带正电荷的锍离子的光酸产生剂和具有亲水性羧基的带负电荷的磺酸根离子，约为 4至约10重量％的树脂和溶剂。
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5.发明授权Photoresist composition for fabricating probe array, method of fabricating probe array using the photoresist composition, composition for photosensitive type developed bottom anti-reflective coating, fabricating method of patterns using the same and fabricating method of semiconductor device using the same 有权用于制造探针阵列的光致抗蚀剂组合物，使用光致抗蚀剂组合物制造探针阵列的方法，用于感光型显影底部抗反射涂层的组合物，使用其的图案的制造方法和使用其的半导体器件的制造方法公开(公告)号：US08871423B2
公开(公告)日：2014-10-28
申请号：US13015869
申请日：2011-01-28
申请人： Hyo-Jin Yun , Jae-Ho Kim , Young-Ho Kim , Boo-Deuk Kim , Jin-A Ryu , Myung-Sun Kim , Se-Kyung Baek , Soo-Kyung Kim , Ji-Yun Ham
发明人： Hyo-Jin Yun , Jae-Ho Kim , Young-Ho Kim , Boo-Deuk Kim , Jin-A Ryu , Myung-Sun Kim , Se-Kyung Baek , Soo-Kyung Kim , Ji-Yun Ham
IPC分类号： G03F7/004 , G03F7/38 , C07C303/32 , C07C309/06 , C07C309/12 , G03F7/039 , G03F7/20
CPC分类号： G03F7/004 , C07C303/32 , C07C309/06 , C07C309/12 , G03F7/0045 , G03F7/0397 , G03F7/20 , Y10S430/122 , Y10S430/123
摘要： A photoresist composition for fabricating a probe array is provided. The photoresist composition includes a photoacid generator having an onium salt and an i-line reactive sensitizer.
摘要翻译： 提供了用于制造探针阵列的光致抗蚀剂组合物。 光致抗蚀剂组合物包括具有鎓盐和i线反应性敏化剂的光酸产生剂。
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6.发明申请PHOTORESIST COMPOSITION FOR FABRICATING PROBE ARRAY, METHOD OF FABRICATING PROBE ARRAY USING THE PHOTORESIST COMPOSITION, COMPOSITION FOR PHOTOSENSITIVE TYPE DEVELOPED BOTTOM ANTI-REFLECTIVE COATING, FABRICATING METHOD OF PATTERNS USING THE SAME AND FABRICATING METHOD OF SEMICONDUCTOR DEVICE USING THE SAME 有权用于制造探针阵列的光电组合物，使用光电组合物制造探针阵列的方法，用于感光型底层反射涂层的组合物，使用其的图案的制作方法和使用其的半导体器件的制造方法公开(公告)号：US20110189608A1
公开(公告)日：2011-08-04
申请号：US13015869
申请日：2011-01-28
申请人： Hyo-Jin Yun , Jae-Ho Kim , Young-Ho Kim , Boo-Deuk Kim , Jin-A Ryu , Myung-Sun Kim , Se-Kyung Baek , Soo-Kyung Kim , Ji-Yun Ham
发明人： Hyo-Jin Yun , Jae-Ho Kim , Young-Ho Kim , Boo-Deuk Kim , Jin-A Ryu , Myung-Sun Kim , Se-Kyung Baek , Soo-Kyung Kim , Ji-Yun Ham
CPC分类号： G03F7/004 , C07C303/32 , C07C309/06 , C07C309/12 , G03F7/0045 , G03F7/0397 , G03F7/20 , Y10S430/122 , Y10S430/123
摘要： A photoresist composition for fabricating a probe array is provided. The photoresist composition includes a photoacid generator having an onium salt and an i-line reactive sensitizer.
摘要翻译： 提供了用于制造探针阵列的光致抗蚀剂组合物。 光致抗蚀剂组合物包括具有鎓盐和i线反应性敏化剂的光酸产生剂。
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7.发明申请Photoresist composition and method of forming a photoresist pattern using the same 审中-公开光致抗蚀剂组合物及其形成方法公开(公告)号：US20070166644A1
公开(公告)日：2007-07-19
申请号：US11655158
申请日：2007-01-19
申请人： Boo-Deuk Kim , Hyo-Jin Yun , Young-Gil Kwon , Young-Ho Kim , Jin-A Ryu
发明人： Boo-Deuk Kim , Hyo-Jin Yun , Young-Gil Kwon , Young-Ho Kim , Jin-A Ryu
IPC分类号： G03C1/00
CPC分类号： G03F7/038
摘要： In one aspect, a photoresist composition includes a cross-linking agent, a photosensitive material, an organic solvent, and a compound having a chemical structure represented by formulae (1) or (2) herein. The cross-linking agent includes at least one epoxy group and/or at least two hydroxyl groups.
摘要翻译： 在一个方面，光致抗蚀剂组合物包括交联剂，感光材料，有机溶剂和具有由本文式（1）或（2）表示的化学结构的化合物。 交联剂包括至少一个环氧基和/或至少两个羟基。
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公开(公告)号：US07964332B2
公开(公告)日：2011-06-21
申请号：US12339863
申请日：2008-12-19
申请人： Hyo-Jin Yun , Young-Ho Kim , Boo-Deuk Kim , Ji-Man Park , Jin-A Ryu , Jae-Hee Choi
发明人： Hyo-Jin Yun , Young-Ho Kim , Boo-Deuk Kim , Ji-Man Park , Jin-A Ryu , Jae-Hee Choi
CPC分类号： G03F7/091 , G03F7/038 , Y10S430/106 , Y10S430/114 , Y10S430/128
摘要： In polymers for an anti-reflective coating, compositions for an anti-reflective coating and methods of forming a pattern of a semiconductor device using the same, the compositions for an anti-reflective coating include a polymer that includes a first repeating unit having a basic side group, a second repeating unit having a light-absorbing group, and a third repeating unit having a cross-linkable group; a photoacid generator; a cross-linking agent; and a solvent. The polymer for the anti-reflective coating, which may have a basic side group chemically bound to a backbone of the polymer, may properly adjust diffusion of an acid in an anti-reflective coating layer to improve the profile of a pattern.
摘要翻译： 在用于抗反射涂层的聚合物中，用于抗反射涂层的组合物和使用其形成半导体器件的图案的方法，用于抗反射涂层的组合物包括聚合物，其包括具有碱性 具有光吸收基团的第二重复单元和具有可交联基团的第三重复单元; 光致酸发生器; 交联剂; 和溶剂。 用于抗反射涂层的聚合物可以具有与聚合物的骨架化学结合的碱性侧基，可以适当地调节抗反射涂层中的酸的扩散以改善图案的轮廓。
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9.发明授权Photoacid generators, photoresist composition including the same and method of forming pattern using the same 失效光生酸产生剂，包含其的光致抗蚀剂组合物和使用其形成图案的方法公开(公告)号：US07527913B2
公开(公告)日：2009-05-05
申请号：US12011226
申请日：2008-01-24
申请人： Hyo-Jin Yun , Young-Gil Kwon , Young-Ho Kim , Do-Young Kim , Jae-Hee Choi , Se-Kyung Baek
发明人： Hyo-Jin Yun , Young-Gil Kwon , Young-Ho Kim , Do-Young Kim , Jae-Hee Choi , Se-Kyung Baek
CPC分类号： C07D493/08 , C07C309/12 , C07C381/12 , C07C2603/74 , C07D333/46 , G03F7/0045 , G03F7/0046 , G03F7/0397 , Y10S430/111 , Y10S430/122 , Y10S430/123
摘要： A photoresist composition includes about 4% to about 10% by weight of a photoresist resin, about 0.1% to about 0.5% by weight of a photoacid generator having a sulfonium-salt cationic group and a sulfonium-salt anionic group containing a carboxyl group as a hydrophilic site and a remainder of a solvent. The photoresist composition may form a photoresist pattern having a uniform profile.
摘要翻译： 光致抗蚀剂组合物包括约4重量％至约10重量％的光致抗蚀剂树脂，约0.1重量％至约0.5重量％的具有锍盐阳离子基团的光酸产生剂和含有羧基的锍盐阴离子基团 亲水部位和剩余的溶剂。 光致抗蚀剂组合物可以形成具有均匀轮廓的光致抗蚀剂图案。
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10.发明申请Photoacid generators, photoresist composition including the same and method of forming pattern using the same 失效光生酸产生剂，包含其的光致抗蚀剂组合物和使用其形成图案的方法公开(公告)号：US20080182203A1
公开(公告)日：2008-07-31
申请号：US12011226
申请日：2008-01-24
申请人： Hyo-Jin Yun , Young-Gil Kwon , Young-Ho Kim , Do-Young Kim , Jae-Hee Choi , Se-Kyung Baek
发明人： Hyo-Jin Yun , Young-Gil Kwon , Young-Ho Kim , Do-Young Kim , Jae-Hee Choi , Se-Kyung Baek
IPC分类号： G03F7/004 , C07D333/16 , C07D311/06 , G03F7/26 , C07C301/00
CPC分类号： C07D493/08 , C07C309/12 , C07C381/12 , C07C2603/74 , C07D333/46 , G03F7/0045 , G03F7/0046 , G03F7/0397 , Y10S430/111 , Y10S430/122 , Y10S430/123
摘要： A photoresist composition includes about 4% to about 10% by weight of a photoresist resin, about 0.1% to about 0.5% by weight of a photoacid generator having a sulfonium-salt cationic group and a sulfonium-salt anionic group containing a carboxyl group as a hydrophilic site and a remainder of a solvent. The photoresist composition may form a photoresist pattern having a uniform profile.
摘要翻译： 光致抗蚀剂组合物包括约4重量％至约10重量％的光致抗蚀剂树脂，约0.1重量％至约0.5重量％的具有锍盐阳离子基团的光酸产生剂和含有羧基的锍盐阴离子基团 亲水部位和剩余的溶剂。 光致抗蚀剂组合物可以形成具有均匀轮廓的光刻胶图案。
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