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    Method for producing high quality silicon single crystal ingot and silicon single crystal wafer made thereby
    2.
    发明申请
    Method for producing high quality silicon single crystal ingot and silicon single crystal wafer made thereby 有权
    由此制造高品质硅单晶锭和硅单晶晶片的方法

    公开(公告)号：US20070151505A1

    公开(公告)日：2007-07-05

    申请号：US11643201

    申请日：2006-12-21

    Applicant: Hyon-Jong Cho

    Inventor： Hyon-Jong Cho

    IPC: C30B5/00 ,  C30B15/00 ,  C30B19/00 ,  C30B21/06

    CPC classification number: C30B29/06 ,  C30B15/14 ,  C30B15/203 ,  Y10T117/1068 ,  Y10T117/1072 ,  Y10T117/1088

    Abstract: In a method for producing a high quality silicon single crystal by the Czochralski method, a lower portion of a solid-liquid interface of a single crystal growth is divided into a central part and a circumferential part, and the temperature gradient of the central part and the temperature gradient of the circumferential part are separately controlled. When a silicon melt located at a lower portion of a solid-liquid interface of a single crystal growth is divided into a central part melt and a circumferential part melt, the method controls the temperature gradient of the central part melt by directly controlling the temperature distribution of a melt and indirectly controls the temperature gradient of the circumferential part melt by controlling the temperature gradient of the single crystal, thereby effectively controlling the overall temperature distribution of the melt, thus producing a high quality single crystal ingot free of defects with a high growth velocity.

    Abstract translation: 在通过切克劳斯基法生产高品质硅单晶的方法中，单晶生长的固液界面的下部被分成中心部分和周边部分，中心部分和 圆周部分的温度梯度被单独控制。 当位于单晶生长的固 - 液界面的下部的硅熔体被分成中心部分熔体和圆周部分熔化时，该方法通过直接控制温度分布来控制中心熔体的温度梯度 并通过控制单晶的温度梯度来间接地控制圆周部分熔体的温度梯度，从而有效地控制熔体的总体温度分布，从而产生没有高生长缺陷的高质量单晶锭 速度。

    High quality single crystal and method of growing the same
    3.
    发明申请
    High quality single crystal and method of growing the same 有权
    高品质单晶和生长方法相同

    公开(公告)号：US20060096526A1

    公开(公告)日：2006-05-11

    申请号：US11254245

    申请日：2005-10-19

    Applicant: Hyon-Jong Cho

    Inventor： Hyon-Jong Cho

    IPC: C30B15/00 ,  C30B27/02 ,  C30B21/06 ,  C30B28/10 ,  C30B30/04

    CPC classification number: C30B29/22 ,  C30B11/003 ,  C30B13/16 ,  C30B15/14 ,  C30B17/00 ,  C30B29/06 ,  C30B29/08 ,  C30B29/20 ,  C30B29/42 ,  Y10T117/1032 ,  Y10T117/1068

    Abstract: Disclosed is a method of growing a single crystal from a melt contained in a crucible. The method includes the step of making the temperature of a melt increase gradually to a maximum point and then decrease gradually along the axis parallel to the lengthwise direction of the single crystal from the interface of the single crystal and the melt to the bottom of the crucible. The increasing temperature of the melt is kept to preferably have a greater temperature gradient than the decreasing temperature thereof. Preferably, the axis is set to pass through the center of the single crystal. Preferably, the convection of the inner region of the melt is made smaller than that of the outer region thereof.

    Abstract translation: 公开了从包含在坩埚中的熔体中生长单晶的方法。 该方法包括使熔体的温度逐渐升高到最大点，然后沿着与单晶长度方向平行的轴从晶体和熔体的界面到坩埚的底部逐渐减小的步骤 。 保持熔体的温度升高优选具有比其降低的温度更大的温度梯度。 优选地，轴被设定为穿过单晶的中心。 优选地，熔体的内部区域的对流被制成小于其外部区域的对流。

    single crystalline silicon wafer, ingot, and producing method thereof
    4.
    发明授权
    single crystalline silicon wafer, ingot, and producing method thereof 有权
    单晶硅晶片，锭及其制造方法

    公开(公告)号：US06521316B2

    公开(公告)日：2003-02-18

    申请号：US09742215

    申请日：2000-12-22

    Applicant: Hong-Woo Lee ,  Joon-Young Choi ,  Hyon-Jong Cho ,  Hak-Do Yoo

    Inventor： Hong-Woo Lee ,  Joon-Young Choi ,  Hyon-Jong Cho ,  Hak-Do Yoo

    IPC: C30B2906

    CPC classification number: C30B29/06 ,  C30B15/203 ,  C30B15/206 ,  Y10T428/21

    Abstract: The present invention relates to a single crystalline silicon ingot, a single crystalline wafer, and a producing method thereof in accordance with the Czochralski method which enables reduction of a large defect area while increasing a micro-vacancy defect area in an agglomerated vacancy point area, which is the area between a central axis and an oxidation-induced stacking fault ring, by providing uniform conditions of crystal ingot growth and cooling and by adjusting a pulling rate for growing an ingot to grow, thus the oxidation-induced stacking fault ring exists only at an edge of the ingot radius.

    Abstract translation: 本发明涉及一种单晶硅锭，单晶晶片及其制造方法，该方法能够减少大的缺陷面积，同时增加聚集的空位点区域的微空缺缺陷面积， 这是通过提供晶锭生长和冷却的均匀条件以及通过调整生长锭生长的牵引速率来产生中心轴和氧化诱发的堆垛层错环之间的区域，因此氧化诱导堆垛层错环只存在 在晶锭半径的边缘。

    Method and Apparatus of Growing Silicon Single Crystal and Silicon Wafer Fabricated Thereby
    6.
    发明申请
    Method and Apparatus of Growing Silicon Single Crystal and Silicon Wafer Fabricated Thereby 审中-公开
    由此制造硅单晶和硅晶片的方法和装置

    公开(公告)号：US20100040525A1

    公开(公告)日：2010-02-18

    申请号：US12369225

    申请日：2009-02-11

    Applicant: Hyon-Jong Cho

    Inventor： Hyon-Jong Cho

    IPC: C01B33/02

    CPC classification number: C30B15/203 ,  C30B15/00 ,  C30B15/14 ,  C30B15/20 ,  C30B29/06 ,  Y10S117/917 ,  Y10T117/1068 ,  Y10T117/1088

    Abstract: Disclosed is a method of fabrication of high quality silicon single crystal at high growth rate. The method grows silicon single crystal from silicon melt by Czochralski method, wherein the silicon single crystal is grown according to conditions that the silicon melt has an axial temperature gradient determined according to an equation, {(ΔTmax−ΔTmin)/ΔTmin}×100≦10, wherein ΔTmax is a maximum axial temperature gradient of the silicon melt and ΔTmin is a minimum axial temperature gradient of the silicon melt, when the axial temperature gradient is measured along an axis parallel to a radial direction of the silicon single crystal.

    Abstract translation: 公开了以高生长速率制造高质量硅单晶的方法。 该方法通过Czochralski法从硅熔体中生长硅单晶，其中根据条件，生长硅单晶，其条件是硅熔体具有根据等式{（＆Dgr; Tmax-＆Dgr; Tmin）/＆Dgr ; Tmin}×100＆nlE; 10，其中＆Dgr; Tmax是硅熔体的最大轴向温度梯度，＆Dgr; Tmin是硅熔体的最小轴向温度梯度，当沿着平行于 硅单晶的径向。

    APPARATUS FOR MANUFACTURING HIGH-QUALITY SEMICONDUCTOR SINGLE CRYSTAL INGOT AND METHOD USING THE SAME
    7.
    发明申请
    APPARATUS FOR MANUFACTURING HIGH-QUALITY SEMICONDUCTOR SINGLE CRYSTAL INGOT AND METHOD USING THE SAME 审中-公开
    用于制造高质量半导体单晶的装置和使用该晶体的方法

    公开(公告)号：US20090183670A1

    公开(公告)日：2009-07-23

    申请号：US12356249

    申请日：2009-01-20

    Applicant: Hyon-Jong Cho ,  Young-Ho Hong ,  Hong-Woo Lee ,  Jong-Min Kang ,  Dae-Yeon Kim

    Inventor： Hyon-Jong Cho ,  Young-Ho Hong ,  Hong-Woo Lee ,  Jong-Min Kang ,  Dae-Yeon Kim

    IPC: C30B15/20

    CPC classification number: C30B15/305 ,  C30B29/06 ,  Y10T117/1032

    Abstract: The present invention relates to an apparatus for manufacturing a high-quality semiconductor single crystal ingot and a method using the same. The apparatus of the present invention includes a quartz crucible, a heater installed around a side wall of the quartz crucible, a single crystal pulling means for pulling a single crystal from the semiconductor melt received in the quartz crucible, and a magnetic field applying means for forming a Maximum Gauss Plane (MGP) at a location of ML-1000 mm to ML-350 mm based on a Melt Level (ML) of the melt surface, and applying a strong magnetic field of 3000 to 5500 Gauss to an intersection between the MGP and the side wall of the quartz crucible and a weak magnetic field of 1500 to 3000 Gauss below a solid-liquid interface.

    Abstract translation: 本发明涉及用于制造高质量半导体单晶锭的装置及其使用方法。 本发明的装置包括石英坩埚，安装在石英坩埚的侧壁周围的加热器，用于从接收在石英坩埚中的半导体熔体中拉出单晶的单晶拉制装置，以及用于 基于熔体表面的熔融水平（ML），在ML-1000mm的位置形成最大高斯平面（MGP）至ML-350mm，并将3000至5500高斯的强磁场施加到 MGP和石英坩埚的侧壁以及低于固液界面的1500至3000高斯的弱磁场。

    Method for producing high quality silicon single crystal ingot and silicon single crystal wafer made thereby
    8.
    发明授权
    Method for producing high quality silicon single crystal ingot and silicon single crystal wafer made thereby 有权
    由此制造高品质硅单晶锭和硅单晶晶片的方法

    公开(公告)号：US07427325B2

    公开(公告)日：2008-09-23

    申请号：US11643201

    申请日：2006-12-21

    Applicant: Hyon-Jong Cho

    Inventor： Hyon-Jong Cho

    IPC: C30B15/20

    CPC classification number: C30B29/06 ,  C30B15/14 ,  C30B15/203 ,  Y10T117/1068 ,  Y10T117/1072 ,  Y10T117/1088

    Abstract: In a method for producing a high quality silicon single crystal by the Czochralski method, a lower portion of a solid-liquid interface of a single crystal growth is divided into a central part and a circumferential part, and the temperature gradient of the central part and the temperature gradient of the circumferential part are separately controlled. When a silicon melt located at a lower portion of a solid-liquid interface of a single crystal growth is divided into a central part melt and a circumferential part melt, the method controls the temperature gradient of the central part melt by directly controlling the temperature distribution of a melt and indirectly controls the temperature gradient of the circumferential part melt by controlling the temperature gradient of the single crystal, thereby effectively controlling the overall temperature distribution of the melt, thus producing a high quality single crystal ingot free of defects with a high growth velocity.

    Abstract translation: 在通过切克劳斯基法生产高品质硅单晶的方法中，单晶生长的固液界面的下部被分成中心部分和周边部分，中心部分和 圆周部分的温度梯度被单独控制。 当位于单晶生长的固 - 液界面的下部的硅熔体被分成中心部分熔体和圆周部分熔化时，该方法通过直接控制温度分布来控制中心熔体的温度梯度 并通过控制单晶的温度梯度来间接地控制圆周部分熔体的温度梯度，从而有效地控制熔体的总体温度分布，从而产生没有高生长缺陷的高质量单晶锭 速度。

    High quality single crystal and method of growing the same
    9.
    发明授权
    High quality single crystal and method of growing the same 有权
    高品质单晶和生长方法相同

    公开(公告)号：US07416603B2

    公开(公告)日：2008-08-26

    申请号：US11254245

    申请日：2005-10-19

    Applicant: Hyon-Jong Cho

    Inventor： Hyon-Jong Cho

    IPC: C30B15/20

    CPC classification number: C30B29/22 ,  C30B11/003 ,  C30B13/16 ,  C30B15/14 ,  C30B17/00 ,  C30B29/06 ,  C30B29/08 ,  C30B29/20 ,  C30B29/42 ,  Y10T117/1032 ,  Y10T117/1068

    Abstract: Disclosed is a method of growing a single crystal from a melt contained in a crucible. The method includes the step of making the temperature of a melt increase gradually to a maximum point and then decrease gradually along the axis parallel to the lengthwise direction of the single crystal from the interface of the single crystal and the melt to the bottom of the crucible. The increasing temperature of the melt is kept to preferably have a greater temperature gradient than the decreasing temperature thereof. Preferably, the axis is set to pass through the center of the single crystal. Preferably, the convection of the inner region of the melt is made smaller than that of the outer region thereof.

    Abstract translation: 公开了从包含在坩埚中的熔体中生长单晶的方法。 该方法包括使熔体的温度逐渐升高到最大点，然后沿着与单晶长度方向平行的轴从晶体和熔体的界面到坩埚的底部逐渐减小的步骤 。 保持熔体的温度升高优选具有比其降低的温度更大的温度梯度。 优选地，轴被设定为穿过单晶的中心。 优选地，熔体的内部区域的对流被制成小于其外部区域的对流。

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