公开(公告)号：US20120114856A1

公开(公告)日：2012-05-10

申请号：US13346470

申请日：2012-01-09

申请人： Hyung Sang Park ,  Seung Woo Choi ,  Jong Su Kim ,  Dong Rak Jung ,  Jeong Ho Lee ,  Chun Soo Lee

发明人： Hyung Sang Park ,  Seung Woo Choi ,  Jong Su Kim ,  Dong Rak Jung ,  Jeong Ho Lee ,  Chun Soo Lee

IPC分类号： C23C16/04 ,  C23C16/458

CPC分类号： C23C16/40 ,  C23C16/4408 ,  C23C16/45519

摘要： A deposition apparatus configured to form a thin film on a substrate includes: a reactor wall; a substrate support positioned under the reactor wall; and a showerhead plate positioned above the substrate support. The showerhead plate defines a reaction space together with the substrate support. The apparatus also includes one or more gas conduits configured to open to a periphery of the reaction space at least while an inert gas is supplied therethrough. The one or more gas conduits are configured to supply the inert gas inwardly toward the periphery of the substrate support around the reaction space. This configuration prevents reactant gases from flowing between a substrate and the substrate support during a deposition process, thereby preventing deposition of an undesired thin film and impurity particles on the back side of the substrate.

摘要翻译： 构造成在基板上形成薄膜的沉积装置包括：反应器壁; 位于反应器壁下方的衬底支撑件; 以及位于基板支撑件上方的喷头板。 喷头板与基板支撑件一起限定反应空间。 该装置还包括一个或多个气体管道，其构造成至少在通过其供应惰性气体时向反应空间的周边开放。 一个或多个气体导管构造成向反应空间周围的衬底支撑件的周围向内供应惰性气体。 这种构造防止了在沉积工艺期间反应气体在衬底和衬底支撑件之间流动，从而防止不期望的薄膜和杂质颗粒沉积在衬底的背面上。

公开(公告)号：US20090156015A1

公开(公告)日：2009-06-18

申请号：US12334135

申请日：2008-12-12

申请人： Hyung Sang Park ,  Seung Woo Choi ,  Jong Su Kim ,  Dong Rak Jung ,  Jeong Ho Lee ,  Chun Soo Lee

发明人： Hyung Sang Park ,  Seung Woo Choi ,  Jong Su Kim ,  Dong Rak Jung ,  Jeong Ho Lee ,  Chun Soo Lee

IPC分类号： H01L21/30 ,  C23C16/54

CPC分类号： C23C16/40 ,  C23C16/4408 ,  C23C16/45519

摘要： A deposition apparatus configured to form a thin film on a substrate includes: a reactor wall; a substrate support positioned under the reactor wall; and a showerhead plate positioned above the substrate support. The showerhead plate defines a reaction space together with the substrate support. The apparatus also includes one or more gas conduits configured to open to a periphery of the reaction space at least while an inert gas is supplied therethrough. The one or more gas conduits are configured to supply the inert gas inwardly toward the periphery of the substrate support around the reaction space. This configuration prevents reactant gases from flowing between a substrate and the substrate support during a deposition process, thereby preventing deposition of an undesired thin film and impurity particles on the back side of the substrate.

摘要翻译： 构造成在基板上形成薄膜的沉积装置包括：反应器壁; 位于反应器壁下方的衬底支撑件; 以及位于基板支撑件上方的喷头板。 喷头板与基板支撑件一起限定反应空间。 该装置还包括一个或多个气体管道，其构造成至少在通过其供应惰性气体时向反应空间的周边开放。 一个或多个气体导管构造成向反应空间周围的衬底支撑件的周围向内供应惰性气体。 这种构造防止了在沉积工艺期间反应气体在衬底和衬底支撑件之间流动，从而防止不期望的薄膜和杂质颗粒沉积在衬底的背面上。

公开(公告)号：US08747948B2

公开(公告)日：2014-06-10

申请号：US13346470

申请日：2012-01-09

申请人： Hyung Sang Park ,  Seung Woo Choi ,  Jong Su Kim ,  Dong Rak Jung ,  Jeong Ho Lee ,  Chun Soo Lee

发明人： Hyung Sang Park ,  Seung Woo Choi ,  Jong Su Kim ,  Dong Rak Jung ,  Jeong Ho Lee ,  Chun Soo Lee

IPC分类号： C23C16/00

CPC分类号： C23C16/40 ,  C23C16/4408 ,  C23C16/45519

摘要： A deposition apparatus configured to form a thin film on a substrate includes: a reactor wall; a substrate support positioned under the reactor wall; and a showerhead plate positioned above the substrate support. The showerhead plate defines a reaction space together with the substrate support. The apparatus also includes one or more gas conduits configured to open to a periphery of the reaction space at least while an inert gas is supplied therethrough. The one or more gas conduits are configured to supply the inert gas inwardly toward the periphery of the substrate support around the reaction space. This configuration prevents reactant gases from flowing between a substrate and the substrate support during a deposition process, thereby preventing deposition of an undesired thin film and impurity particles on the back side of the substrate.

摘要翻译： 构造成在基板上形成薄膜的沉积装置包括：反应器壁; 位于反应器壁下方的衬底支撑件; 以及位于基板支撑件上方的喷头板。 喷头板与基板支撑件一起限定反应空间。 该装置还包括一个或多个气体导管，其构造成至少在通过其供应惰性气体时向反应空间的周边开放。 一个或多个气体导管构造成向反应空间周围的衬底支撑件的周围向内供应惰性气体。 这种构造防止了在沉积工艺期间反应气体在衬底和衬底支撑件之间流动，从而防止不期望的薄膜和杂质颗粒沉积在衬底的背面上。

公开(公告)号：US08092606B2

公开(公告)日：2012-01-10

申请号：US12334135

申请日：2008-12-12

申请人： Hyung Sang Park ,  Seung Woo Choi ,  Jong Su Kim ,  Dong Rak Jung ,  Jeong Ho Lee ,  Chun Soo Lee

发明人： Hyung Sang Park ,  Seung Woo Choi ,  Jong Su Kim ,  Dong Rak Jung ,  Jeong Ho Lee ,  Chun Soo Lee

IPC分类号： C23C16/00 ,  H01L21/31

CPC分类号： C23C16/40 ,  C23C16/4408 ,  C23C16/45519

摘要： A deposition apparatus configured to form a thin film on a substrate includes: a reactor wall; a substrate support positioned under the reactor wall; and a showerhead plate positioned above the substrate support. The showerhead plate defines a reaction space together with the substrate support. The apparatus also includes one or more gas conduits configured to open to a periphery of the reaction space at least while an inert gas is supplied therethrough. The one or more gas conduits are configured to supply the inert gas inwardly toward the periphery of the substrate support around the reaction space. This configuration prevents reactant gases from flowing between a substrate and the substrate support during a deposition process, thereby preventing deposition of an undesired thin film and impurity particles on the back side of the substrate.

摘要翻译： 构造成在基板上形成薄膜的沉积装置包括：反应器壁; 位于反应器壁下方的衬底支撑件; 以及位于基板支撑件上方的喷头板。 喷头板与基板支撑件一起限定反应空间。 该装置还包括一个或多个气体导管，其构造成至少在通过其供应惰性气体时向反应空间的周边开放。 一个或多个气体导管构造成向反应空间周围的衬底支撑件的周围向内供应惰性气体。 这种构造防止了在沉积工艺期间反应气体在衬底和衬底支撑件之间流动，从而防止不期望的薄膜和杂质颗粒沉积在衬底的背面上。

公开(公告)号：US20090163024A1

公开(公告)日：2009-06-25

申请号：US12337141

申请日：2008-12-17

申请人： Jeon Ho Kim ,  Hyung Sang Park ,  Seung Woo Choi ,  Dong Rak Jung ,  Chun Soo Lee

发明人： Jeon Ho Kim ,  Hyung Sang Park ,  Seung Woo Choi ,  Dong Rak Jung ,  Chun Soo Lee

IPC分类号： H01L21/443

CPC分类号： H01L21/28556 ,  C23C16/16 ,  C23C16/18 ,  H01L21/76843 ,  H01L21/76846

摘要： A method of depositing includes: loading a substrate into a reactor; and conducting a plurality of atomic layer deposition cycles on the substrate in the reactor. At least one of the cycles includes steps of: supplying a ruthenium precursor to the reactor; supplying a purge gas to the reactor; and supplying non-plasma ammonia gas to the reactor after supplying the ruthenium precursor. The method allows formation of a ruthenium layer having an excellent step-coverage at a relatively low deposition temperature at a relatively high deposition rate. In situ isothermal deposition of barrier materials, such as TaN at 200-300° C., is also facilitated.

摘要翻译： 一种沉积方法包括：将基底装载到反应器中; 并在反应器中的衬底上进行多个原子层沉积循环。 所述循环中的至少一个包括以下步骤：向所述反应器供应钌前体; 向反应器供应净化气体; 并在供应钌前体之后向反应器供应非等离子体氨气。 该方法允许以相对高的沉积速率在相对低的沉积温度下形成具有优异的阶梯覆盖率的钌层。 隔离材料的原位等温沉积，例如在200-300℃的TaN也是有利的。

公开(公告)号：US20130052348A1

公开(公告)日：2013-02-28

申请号：US13598998

申请日：2012-08-30

申请人： Seung Woo Choi ,  Gwang Lae Park ,  Chun Soo Lee ,  Jeong Ho Lee ,  Young Seok Choi

发明人： Seung Woo Choi ,  Gwang Lae Park ,  Chun Soo Lee ,  Jeong Ho Lee ,  Young Seok Choi

IPC分类号： C23C16/455 ,  B23P11/00

CPC分类号： C23C16/45591 ,  C23C16/45504 ,  C23C16/45527 ,  H01L21/68742 ,  H01L21/68792

摘要： A reactor configured to subject a substrate to alternately repeated surface reactions of vapor-phase reactants is disclosed. The reactor may include a reaction chamber that defines a reaction space and a gas flow control guide structure; and a substrate holder. The gas flow control guide includes one or more channels. Each of the channels widens as the channel extends from the inlet to the reaction space. At least one of the channels is configured to generate a non-uniform laminar flow at a first portion of the periphery of the reaction space such that the laminar flow includes a plurality of flow paths that provide different amounts of a fluid. The reaction chamber may include a reactor base and a reactor cover detachable from each other; and a driver configured to independently adjust at least three portions of the reactor base to provide a substantially perfect seal to the reactor space.

摘要翻译： 公开了一种被配置成使基板交替重复表面反应的反应器的反应器。 反应器可以包括限定反应空间和气体流量控制引导结构的反应室; 和基板支架。 气体流量控制引导件包括一个或多个通道。 当通道从入口延伸到反应空间时，每个通道变宽。 至少一个通道构造成在反应空间的周边的第一部分处产生不均匀的层流，使得层流包括提供不同量的流体的多个流动路径。 反应室可以包括可以彼此分离的反应器基座和反应器盖; 以及被配置为独立地调整反应器基座的至少三个部分以向反应器空间提供基本上完美的密封的驱动器。

公开(公告)号：US08545940B2

公开(公告)日：2013-10-01

申请号：US13598998

申请日：2012-08-30

申请人： Seung Woo Choi ,  Gwang Lae Park ,  Chun Soo Lee ,  Jeong Ho Lee ,  Young Seok Choi

发明人： Seung Woo Choi ,  Gwang Lae Park ,  Chun Soo Lee ,  Jeong Ho Lee ,  Young Seok Choi

IPC分类号： C23C16/18 ,  C23C16/455 ,  C23C16/06

CPC分类号： C23C16/45591 ,  C23C16/45504 ,  C23C16/45527 ,  H01L21/68742 ,  H01L21/68792

摘要： A reactor configured to subject a substrate to alternately repeated surface reactions of vapor-phase reactants is disclosed. The reactor may include a reaction chamber that defines a reaction space and a gas flow control guide structure; and a substrate holder. The gas flow control guide includes one or more channels. Each of the channels widens as the channel extends from the inlet to the reaction space. At least one of the channels is configured to generate a non-uniform laminar flow at a first portion of the periphery of the reaction space such that the laminar flow includes a plurality of flow paths that provide different amounts of a fluid. The reaction chamber may include a reactor base and a reactor cover detachable from each other; and a driver configured to independently adjust at least three portions of the reactor base to provide a substantially perfect seal to the reactor space.

摘要翻译： 公开了一种被配置成使基板交替重复表面反应的反应器的反应器。 反应器可以包括限定反应空间和气体流量控制引导结构的反应室; 和基板支架。 气体流量控制引导件包括一个或多个通道。 当通道从入口延伸到反应空间时，每个通道变宽。 至少一个通道构造成在反应空间的周边的第一部分处产生不均匀的层流，使得层流包括提供不同量的流体的多个流动路径。 反应室可以包括可以彼此分离的反应器基座和反应器盖; 以及被配置为独立地调整反应器基座的至少三个部分以向反应器空间提供基本上完美的密封的驱动器。

公开(公告)号：US08282735B2

公开(公告)日：2012-10-09

申请号：US12324178

申请日：2008-11-26

申请人： Seung Woo Choi ,  Gwang Lae Park ,  Chun Soo Lee ,  Jeong Ho Lee ,  Young Seok Choi

发明人： Seung Woo Choi ,  Gwang Lae Park ,  Chun Soo Lee ,  Jeong Ho Lee ,  Young Seok Choi

IPC分类号： C23C16/455 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06 ,  C23C16/22

CPC分类号： C23C16/45591 ,  C23C16/45504 ,  C23C16/45527 ,  H01L21/68742 ,  H01L21/68792

摘要： A reactor configured to subject a substrate to alternately repeated surface reactions of vapor-phase reactants is disclosed. In one embodiment, the reactor includes a reaction chamber that defines a reaction space; one or more inlets; an exhaust outlet; a gas flow control guide structure; and a substrate holder. The gas flow control guide includes one or more channels, each of which extends from a respective one of the one or more inlets to a first portion of a periphery of the reaction space. Each of the channels widens as the channel extends from the inlet to the reaction space. At least one of the channels is configured to generate a non-uniform laminar flow at the first portion of the periphery of the reaction space such that the laminar flow includes a plurality of flow paths that provide different amounts of a fluid. The reaction chamber may include a reactor base and a reactor cover detachable from each other; and a driver configured to independently adjust at least three portions of the reactor base to provide a substantially perfect seal to the reactor space.

摘要翻译： 公开了一种被配置成使基板交替重复表面反应的反应器的反应器。 在一个实施方案中，反应器包括限定反应空间的反应室; 一个或多个入口; 排气口 气流控制引导结构; 和基板支架。 气体流量控制引导件包括一个或多个通道，每个通道从一个或多个入口中的相应一个入口延伸到反应空间的外围的第一部分。 当通道从入口延伸到反应空间时，每个通道变宽。 至少一个通道构造成在反应空间的周边的第一部分处产生不均匀的层流，使得层流包括提供不同量的流体的多个流动路径。 反应室可以包括可以彼此分离的反应器基座和反应器盖; 以及被配置为独立地调整反应器基座的至少三个部分以向反应器空间提供基本上完美的密封的驱动器。

公开(公告)号：US20090136665A1

公开(公告)日：2009-05-28

申请号：US12324178

申请日：2008-11-26

申请人： Seung Woo Choi ,  Gwang Lae Park ,  Chun Soo Lee ,  Jeong Ho Lee ,  Young Seok Choi

发明人： Seung Woo Choi ,  Gwang Lae Park ,  Chun Soo Lee ,  Jeong Ho Lee ,  Young Seok Choi

IPC分类号： C23C16/44 ,  C23C16/54

CPC分类号： C23C16/45591 ,  C23C16/45504 ,  C23C16/45527 ,  H01L21/68742 ,  H01L21/68792

摘要： A reactor configured to subject a substrate to alternately repeated surface reactions of vapor-phase reactants is disclosed. In one embodiment, the reactor includes a reaction chamber that defines a reaction space; one or more inlets; an exhaust outlet; a gas flow control guide structure; and a substrate holder. The gas flow control guide includes one or more channels, each of which extends from a respective one of the one or more inlets to a first portion of a periphery of the reaction space. Each of the channels widens as the channel extends from the inlet to the reaction space. At least one of the channels is configured to generate a non-uniform laminar flow at the first portion of the periphery of the reaction space such that the laminar flow includes a plurality of flow paths that provide different amounts of a fluid. The reaction chamber may include a reactor base and a reactor cover detachable from each other; and a driver configured to independently adjust at least three portions of the reactor base to provide a substantially perfect seal to the reactor space.

摘要翻译： 公开了一种被配置成使基板交替重复表面反应的反应器的反应器。 在一个实施方案中，反应器包括限定反应空间的反应室; 一个或多个入口; 排气口 气流控制引导结构; 和基板支架。 气体流量控制引导件包括一个或多个通道，每个通道从一个或多个入口中的相应一个入口延伸到反应空间的外围的第一部分。 当通道从入口延伸到反应空间时，每个通道变宽。 至少一个通道构造成在反应空间的周边的第一部分处产生不均匀的层流，使得层流包括提供不同量的流体的多个流动路径。 反应室可以包括可以彼此分离的反应器基座和反应器盖; 以及被配置为独立地调整反应器基座的至少三个部分以向反应器空间提供基本上完美的密封的驱动器。

公开(公告)号：US07138336B2

公开(公告)日：2006-11-21

申请号：US10486311

申请日：2001-08-06

申请人： Chun Soo Lee ,  Min Sub Oh ,  Hyung Sang Park

发明人： Chun Soo Lee ,  Min Sub Oh ,  Hyung Sang Park

IPC分类号： H01L21/44 ,  H01L21/311

CPC分类号： C23C16/45544 ,  C23C16/4412 ,  C23C16/45508 ,  C23C16/45519 ,  C23C16/4554 ,  C23C16/45565 ,  C23C16/45591 ,  C23C16/50 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32449 ,  H01L21/28562 ,  H01L21/3141 ,  H01L21/318

摘要： A plasma enhanced atomic layer deposition (PEALD) apparatus and a method of forming a conductive thin film using the same are disclosed. According to the present invention of a PEALD apparatus and a method, a process gas inlet tube and a process gas outlet tube are installed symmetrically and concentrically with respect to a substrate, thereby allowing the process gas to flow uniformly, evenly and smoothly over the substrate, thereby forming a thin film uniformly over the substrate. A uniquely designed showerhead assembly provides not only reduces the volume of the reactor space, but also allows the process gases to flow uniformly, evenly and smoothly throughout the reation space area and reduces the volume of the reaction space, and the smaller volume makes it easier and fast to change the process gases for sequential and repeated process operation.

摘要翻译： 公开了等离子体增强原子层沉积（PEALD）装置和使用其形成导电薄膜的方法。 根据本发明的PEALD设备和方法，工艺气体入口管和工艺气体出口管相对于基底对称地和同心地安装，从而使处理气体均匀地均匀地流过衬底 从而在衬底上均匀地形成薄膜。 独特设计的喷头组件不仅减少了反应器空间的体积，而且使得工艺气体能够均匀，均匀和平稳地流过整个反应空间区域，并且减小了反应空间的体积，并且较小的体积使其更容易 并快速改变工艺气体以进行连续和重复的工艺操作。