High-density dynamic shift register
    3.
    发明授权
    High-density dynamic shift register 失效
    高密度动态移位寄存器

    公开(公告)号:US3621279A

    公开(公告)日:1971-11-16

    申请号:US3621279D

    申请日:1970-01-28

    Applicant: IBM

    CPC classification number: G11C19/186 H01L27/088

    Abstract: A dynamic shift register is disclosed for providing large capacity storage of digital data information in a small-volume solid-state package. A unique high-density approach is taken, involving a cell comprising n subcells capable of storing n-1 bits of data. The cells are fabricated preferably of field effect transistors embedded in a semiconductor wafer or monolith.

    Auxiliary storage apparatus
    8.
    发明授权
    Auxiliary storage apparatus 失效
    辅助存储设备

    公开(公告)号:US3648255A

    公开(公告)日:1972-03-07

    申请号:US3648255D

    申请日:1969-12-31

    Applicant: IBM

    CPC classification number: G11C19/188 G11C19/00

    Abstract: An electronic bulk storage having the characteristics of a sequential access storage device, such as a disk or a drum, but which has a low-access time and a variable instantaneous data rate. Data re stored parallel by word in a plurality of electronically rotatable memory elements selectable by a memory selection matrix. Each element has a feedback loop for recirculating data and when selected, a group of elements is read or written in parallel to a word at a time by electronically rotating the selected memory elements.

    Abstract translation: 具有顺序访问存储装置(诸如盘或鼓)但具有低访问时间和可变瞬时数据速率的特征的电子批量存储器。 数据通过字被并行存储在由存储器选择矩阵选择的多个电子可旋转存储元件中。 每个元件具有用于再循环数据的反馈回路,并且当选择时,通过电子地旋转所选择的存储元件,一组元件一次读取或并行写入一个单词。

    Active storage array having diodes for storage elements
    9.
    发明授权
    Active storage array having diodes for storage elements 失效
    具有存储元件的二极管的主动存储阵列

    公开(公告)号:US3553658A

    公开(公告)日:1971-01-05

    申请号:US3553658D

    申请日:1968-04-15

    Applicant: IBM

    Inventor: PRICER WILBUR D

    CPC classification number: G11C11/36

    Abstract: IN DATA PROCESSING SYSTEMS, A VOLATILE STORAGE ARRAY INCLUDING DIODE PAIRS AS STORAGE ELEMENTS, FOR STORING DIGITAL SIGNALS. INFORMATION IS WRITTEN INTO THE STORAGE ARRAY BY CHARGING OR DISCHARGING STORAGE ELEMENTS. INFORMATION IS SENSED BY DETECTING THE AMOUNT OF CHARGE IN A STORAGE ELEMENT, SINCE THE JUNCTION CAPACITANCE VARIES WITH THE AMOUNT OF CHARGE. THE ENTIRE ARRAY MAY BE BLOCK-RESET BY A SOURCE OF LIGHT.

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