公开(公告)号：US3609356A

公开(公告)日：1971-09-28

申请号：US3609356D

申请日：1968-12-16

Applicant: IBM

Inventor： SCHWUTTKE GUENTHER H ,  MELLAERT LEO J VAN

IPC: G01N23/205 ,  G01N23/207 ,  G01N23/20

CPC classification number: G01N23/205 ,  G01N23/207

Abstract: Disclosed is apparatus for forming topographs of large crystalline areas using X-ray diffraction microscopy techniques. The apparatus includes an X-ray source which directs an X-ray beam at a crystal which is mounted on a position control unit. The position control unit includes a scanning goniometer for translating the crystal and a low friction device for rotating the crystal both with respect to the incident X-ray beam. A beam detector is positioned to detect a diffracted beam as it leaves the crystal. The X-ray detector is connected to the position control unit through a feedback control unit. The feedback control unit operates by introducing a small input perturbation signal into the position control unit thereby causing the crystal to rotate back and forth and causing the diffracted X-ray beam to have an X-ray component which results from the input perturbation signal. The feedback control unit operates to monitor the intensity of the diffracted X-ray beam and the perturbation component thereof so as to adjust automatically the angular position of the position control unit toward an angle (the Bragg angle) which causes the X-ray detector to detect a maximum intensity.

公开(公告)号：US3666548A

公开(公告)日：1972-05-30

申请号：US3666548D

申请日：1970-01-06

Applicant: IBM

Inventor： BRACK KARL ,  GOREY EDWARD F ,  SCHWUTTKE GUENTHER H

IPC: H01L27/00 ,  G02B6/13 ,  H01L21/00 ,  H01L21/02 ,  H01L21/265 ,  H01L21/314 ,  H01L21/331 ,  H01L21/76 ,  H01L21/762 ,  H01L23/29 ,  H01L27/12 ,  H01L29/73 ,  H01L7/00

CPC classification number: H01L21/00 ,  H01L21/314 ,  H01L21/76264 ,  H01L21/76267 ,  H01L21/76281 ,  H01L21/76297 ,  H01L23/291 ,  H01L2924/0002 ,  Y10S148/043 ,  Y10S148/085 ,  Y10S148/106 ,  Y10S148/114 ,  Y10S148/122 ,  Y10S438/95 ,  Y10T428/24802 ,  H01L2924/00

Abstract: A MONOCRYSTALLINE SEMICONDUCTOR BODY HAS A SINGLE, CONTINUOUS INSULATING LAYER EXTENDING FROM THE SURFACE TO A SELECTED DEPTH IN THE BODY AND SURROUNDING A REGION OF THE BODY TO DIELECTRICALLY ISOLATE THE REGION, WHICH HAS ONE SURFACE FORMED BY THE SURFACE OF THE BODY, FROM THE REMAINDER OF THE BODY. THE INSULATING LAYER IS PRODUCED BY BOMBARDING THE BODY WITH IONS, WHICH REACT WITH ATOMS IN THE BODY WHEN HEATED TO A PREDETERMINED TEMPERATURE, THE IONS ARE DIRECTED THROUGH AN OPENING IN A MASK AND A BEVELED SURFACE OF THE MASK SURROUNDING THE OPENING. THE BEVELED SURFACE CONTROLS THE PENETRATION OF THE IONS FROM THE SURFACE OF THE BODY INTO THE BODY TO THE SUB-SURFACE LAYER OF THE IONS DIRECTED THROUGH THE OPENING IN THE MASK. WHEN THE BODY IS HEATED TO THE SELECTED TEMPERATURE, THE EMBEDDED IONS REACT WITH THE ATOMS IN THE BODY TO PRODUCE THE INSULATING LAYER AND DIELECTRICALLY ISOLATE THE REGION, WHICH IS SURROUNDED BY THE SINGLE, CONTINUOUS LAYER, FROM THE REMAINDER OF THE BODY.

公开(公告)号：US3622382A

公开(公告)日：1971-11-23

申请号：US3622382D

申请日：1969-05-05

Applicant: IBM

Inventor： BRACK KARL ,  GOREY EDWARD F ,  SCHWUTTKE GUENTHER H

IPC: H01L21/265 ,  H01L23/29 ,  B44D1/18 ,  H01L7/14

CPC classification number: H01L23/29 ,  H01L21/26533 ,  H01L23/291 ,  H01L2924/0002 ,  Y10S148/085 ,  H01L2924/00

Abstract: A monocrystalline semiconductor body provided with a subsurface insulating layer. The layer is produced by bombarding the body with ions such as nitrogen, oxygen and carbon, for a time sufficient to produce a dense layer of embedded ions and at an energy level sufficient to result in ion penetration to the desired subsurface depth. The body is subsequently heated to a temperature sufficient to react the embedded ions with ions of the semiconductor body to produce an insulating layer.