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1.发明授权公开(公告)号：US11777143B2
公开(公告)日：2023-10-03
申请号：US17060821
申请日：2020-10-01
申请人： IMEC VZW , PANASONIC CORPORATION
发明人： Xubin Chen , Knut Bjarne Gandrud , Maarten Mees , Philippe M. Vereecken , Akihiko Sagara , Hiroki Yabe , Hidekazu Arase
IPC分类号： H01M10/0565
CPC分类号： H01M10/0565 , H01M2300/0082
摘要： A solid electrolyte of the present disclosure includes: a porous dielectric having a plurality of pores interconnected mutually; and an electrolyte including a metal salt and at least one selected from the group consisting of an ionic compound and a bipolar compound and at least partially filling an interior of the plurality of pores. Inner surfaces of the plurality of pores of the porous dielectric are at least partially modified by a functional group containing a halogen atom.
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公开(公告)号：US10767263B2
公开(公告)日：2020-09-08
申请号：US16118875
申请日：2018-08-31
发明人： Ivo Stassen , Rob Ameloot , Dirk De Vos , Philippe M. Vereecken
IPC分类号： C23C16/40 , H01L21/02 , C23C16/44 , C23C16/455
摘要： A method of producing a metal-organic framework (MOF) film on a substrate is provided. The method includes providing a substrate having a main surface and forming on the main surface a MOF film using an organometallic compound precursor and at least one organic ligand, wherein each of the organometallic compound precursor and the at least one organic ligand is provided only in the vapour phase.
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公开(公告)号：US20200181792A1
公开(公告)日：2020-06-11
申请号：US16631783
申请日：2018-07-10
摘要： At least one embodiment relates to a method for transforming at least part of a valve metal layer into a template that includes a plurality of spaced channels aligned longitudinally along a first direction. The method includes a first anodization step that includes anodizing the valve metal layer in a thickness direction to form a porous layer that includes a plurality of channels. Each channel has channel walls and a channel bottom. The channel bottom is coated with a first insulating metal oxide barrier layer as a result of the first anodization step. The method also includes a protective treatment. Further, the method includes a second anodization step after the protective treatment. The second anodization step substantially removes the first insulating metal oxide barrier layer, induces anodization, and creates a second insulating metal oxide barrier layer. In addition, the method includes an etching step.
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公开(公告)号：US10094020B2
公开(公告)日：2018-10-09
申请号：US15304850
申请日：2015-04-29
发明人： Ivo Stassen , Rob Ameloot , Dirk De Vos , Philippe M. Vereecken
IPC分类号： C23C16/40 , C23C16/455 , H01L21/02 , C23C16/44
摘要： A method of producing a metal-organic framework (MOF) film on a substrate is disclosed, the method comprising providing a substrate having a main surface and forming on said main surface a MOF film using an organometallic compound precursor and at least one organic ligand, wherein each of said organometallic compound precursor and said at least one organic ligand is provided only in vapour phase.
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公开(公告)号：US20210174982A1
公开(公告)日：2021-06-10
申请号：US16616804
申请日：2018-07-10
摘要： Porous solid materials are provided. The porous solid materials include a plurality of interconnected wires forming an ordered network. The porous solid materials may have a predetermined volumetric surface area ranging between 2 m2/cm3 and 90 m2/cm3, a predetermined porosity ranging between 3% and 90% and an electrical conductivity higher than 100 S/cm. The porous solid materials may have a predetermined volumetric surface area ranging between 3 m2/cm3 and 72 m2/cm3, a predetermined porosity ranging between 80% and 95% and an electrical conductivity higher than 100 S/cm. The porous solid materials (100) may have a predetermined volumetric surface area ranging between 3 m2/cm3 and 85 m2/cm3, a predetermined porosity ranging between 65% and 90% and an electrical conductivity higher than 2000 S/cm. Methods for the fabrication of such porous solid materials and devices including such porous solid material are also disclosed.
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公开(公告)号：US20190024235A1
公开(公告)日：2019-01-24
申请号：US16118875
申请日：2018-08-31
发明人： Ivo Stassen , Rob Ameloot , Dirk De Vos , Philippe M. Vereecken
IPC分类号： C23C16/455 , H01L21/02 , C23C16/40 , C23C16/44
摘要： A method of producing a metal-organic framework (MOF) film on a substrate is disclosed, the method comprising providing a substrate having a main surface and forming on said main surface a MOF film using an organometallic compound pre-cursor and at least one organic ligand, wherein each of said organometallic compound precursor and said at least one organic ligand is provided only in vapour phase.
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公开(公告)号：US09982360B2
公开(公告)日：2018-05-29
申请号：US14486678
申请日：2014-09-15
申请人： IMEC VZW
CPC分类号： C25F5/00 , B32B37/025 , B32B38/0008 , C01B32/19 , C01B32/194 , H01L21/187 , Y10T428/30
摘要： A method for transferring a graphene layer from a metal substrate to a second substrate is provided comprising: providing a graphene layer on the metal substrate, adsorbing hydrogen atoms on the metal substrate by passing protons through the graphene layer, treating the metal substrate having adsorbed hydrogen atoms thereon in such a way as to form hydrogen gas from the adsorbed hydrogen atoms, thereby detaching the graphene layer from the metal substrate, transferring the graphene layer to the second substrate, and optionally reusing the metal substrate by repeating the aforementioned steps.
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公开(公告)号：US11827992B2
公开(公告)日：2023-11-28
申请号：US18153878
申请日：2023-01-12
IPC分类号： C25D11/04 , C25D11/02 , C25D11/12 , C25D11/18 , C25D11/34 , C25D11/10 , C25D11/24 , C23F1/20 , C25D1/00 , C25D9/02 , C25D9/06 , H01M4/66 , H01M8/0232 , H01M8/0247 , C23F1/28 , C25D3/12 , H01M4/04 , H01M4/80 , C25D1/08 , H01B1/02 , H01B5/00 , B82Y30/00 , B82Y40/00
CPC分类号： C25D11/045 , C23F1/20 , C23F1/28 , C25D1/006 , C25D1/08 , C25D3/12 , C25D9/02 , C25D9/06 , C25D11/022 , C25D11/024 , C25D11/10 , C25D11/12 , C25D11/18 , C25D11/24 , C25D11/34 , H01B1/02 , H01B5/002 , H01M4/0404 , H01M4/045 , H01M4/0407 , H01M4/0442 , H01M4/0452 , H01M4/0471 , H01M4/661 , H01M4/80 , H01M8/0232 , H01M8/0247 , B82Y30/00 , B82Y40/00
摘要： At least one embodiment relates to a method for transforming at least part of a valve metal layer into a template that includes a plurality of spaced channels aligned longitudinally along a first direction. The method includes a first anodization step that includes anodizing the valve metal layer in a thickness direction to form a porous layer that includes a plurality of channels. Each channel has channel walls and a channel bottom. The channel bottom is coated with a first insulating metal oxide barrier layer as a result of the first anodization step. The method also includes a protective treatment. Further, the method includes a second anodization step after the protective treatment. The second anodization step substantially removes the first insulating metal oxide barrier layer, induces anodization, and creates a second insulating metal oxide barrier layer. In addition, the method includes an etching step.
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公开(公告)号：US20230144037A1
公开(公告)日：2023-05-11
申请号：US18153878
申请日：2023-01-12
IPC分类号： C25D11/04 , C23F1/20 , C25D1/00 , C25D9/02 , C25D11/02 , C25D11/12 , C25D11/18 , C25D11/34 , C25D9/06 , C25D11/10 , H01M4/66 , H01M8/0232 , H01M8/0247 , C23F1/28 , C25D3/12 , C25D11/24 , H01M4/04 , H01M4/80 , C25D1/08 , H01B1/02 , H01B5/00
CPC分类号： C25D11/045 , C23F1/20 , C25D1/006 , C25D9/02 , C25D11/024 , C25D11/12 , C25D11/18 , C25D11/34 , C25D9/06 , C25D11/10 , H01M4/661 , H01M8/0232 , H01M8/0247 , C23F1/28 , C25D3/12 , C25D11/24 , H01M4/0404 , H01M4/0407 , H01M4/0442 , H01M4/045 , H01M4/0452 , H01M4/0471 , H01M4/80 , C25D1/08 , C25D11/022 , H01B1/02 , H01B5/002 , B82Y30/00
摘要： At least one embodiment relates to a method for transforming at least part of a valve metal layer into a template that includes a plurality of spaced channels aligned longitudinally along a first direction. The method includes a first anodization step that includes anodizing the valve metal layer in a thickness direction to form a porous layer that includes a plurality of channels. Each channel has channel walls and a channel bottom. The channel bottom is coated with a first insulating metal oxide barrier layer as a result of the first anodization step. The method also includes a protective treatment. Further, the method includes a second anodization step after the protective treatment. The second anodization step substantially removes the first insulating metal oxide barrier layer, induces anodization, and creates a second insulating metal oxide barrier layer. In addition, the method includes an etching step.
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公开(公告)号：US20170198393A1
公开(公告)日：2017-07-13
申请号：US15304850
申请日：2015-04-29
发明人： Ivo Stassen , Rob Ameloot , Dirk De Vos , Philippe M. Vereecken
IPC分类号： C23C16/455 , H01L21/02 , C23C16/44
CPC分类号： C23C16/45553 , C23C16/407 , C23C16/4408 , C23C16/45523 , C23C16/45527 , C23C16/4554 , H01L21/02172 , H01L21/02203 , H01L21/02271 , H01L21/0228
摘要： A method of producing a metal-organic framework (MOF) film on a substrate is disclosed, the method comprising providing a substrate having a main surface and forming on said main surface a MOF film using an organometallic compound precursor and at least one organic ligand, wherein each of said organometallic compound precursor and said at least one organic ligand is provided only in vapour phase.
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