公开(公告)号：US09349804B2

公开(公告)日：2016-05-24

申请号：US13765102

申请日：2013-02-12

Applicant: Infineon Technologies AG

Inventor： Rudolf Berger ,  Hans-Joachim Schulze ,  Anton Mauder ,  Wolfgang Lehnert ,  Günther Ruhl ,  Roland Rupp

IPC: H01L21/30 ,  H01L21/46 ,  H01L29/16 ,  H01L21/56 ,  H01L23/29 ,  H01L21/20 ,  H01L29/10 ,  H01L21/02

CPC classification number: H01L29/1608 ,  H01L21/02002 ,  H01L21/2007 ,  H01L21/56 ,  H01L23/291 ,  H01L23/298 ,  H01L29/1075 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A composite wafer includes a substrate and a SiC-based functional layer. The substrate includes a porous carbon substrate core and an encapsulating layer encapsulating the substrate core. The SiC-based functional layer comprises, at an interface region with the encapsulating layer, at least one of: a carbide and a silicide formed by reaction of a portion of the SiC-based functional layer with a carbide-and-silicide-forming metal. An amount of the carbide-and-silicide-forming metal, integrated over the thickness of the functional layer, is 10−4 mg/cm2 to 0.1 mg/cm2.

Abstract translation: 复合晶片包括基板和SiC基功能层。 衬底包括多孔碳衬底芯和封装衬底芯的封装层。 所述SiC基功能层在与所述封装层的界面区域处包含以下中的至少一种：碳化物和由所述SiC基功能层的一部分与碳化物和硅化物形成金属反应形成的硅化物 。 在功能层的厚度上积分的碳化物和硅化物形成金属的量为10-4mg / cm 2至0.1mg / cm 2。

公开(公告)号：US20160225856A1

公开(公告)日：2016-08-04

申请号：US15097114

申请日：2016-04-12

Applicant: Infineon Technologies AG

Inventor： Rudolf Berger ,  Hans-Joachim Schulze ,  Anton Mauder ,  Wolfgang Lehnert ,  Günther Ruhl ,  Roland Rupp

IPC: H01L29/16 ,  H01L23/29

CPC classification number: H01L29/1608 ,  H01L21/02002 ,  H01L21/02376 ,  H01L21/02378 ,  H01L21/0243 ,  H01L21/02491 ,  H01L21/02529 ,  H01L21/2007 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/56 ,  H01L23/291 ,  H01L23/298 ,  H01L29/1075 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A composite wafer includes a substrate and a SiC-based functional layer. The substrate includes a porous carbon substrate core and an encapsulating layer encapsulating the substrate core. The SiC-based functional layer comprises, at an interface region with the encapsulating layer, at least one of: a carbide and a silicide formed by reaction of a portion of the SiC-based functional layer with a carbide-and-silicide-forming metal. An amount of the carbide-and-silicide-forming metal, integrated over the thickness of the functional layer, is 10−4 mg/cm2 to 0.1 mg/cm2.

Abstract translation: 复合晶片包括基板和SiC基功能层。 衬底包括多孔碳衬底芯和封装衬底芯的封装层。 所述SiC基功能层在与所述封装层的界面区域处包含以下中的至少一种：碳化物和由所述SiC基功能层的一部分与碳化物和硅化物形成金属反应形成的硅化物 。 在功能层的厚度上积分的碳化物和硅化物形成金属的量为10-4mg / cm 2至0.1mg / cm 2。

公开(公告)号：US20140225125A1

公开(公告)日：2014-08-14

申请号：US13765102

申请日：2013-02-12

Applicant: INFINEON TECHNOLOGIES AG

Inventor： Rudolf Berger ,  Hans-Joachim Schulze ,  Anton Mauder ,  Wolfgang Lehnert ,  Günther Ruhl ,  Roland Rupp

IPC: H01L29/16 ,  H01L23/29 ,  H01L21/56

CPC classification number: H01L29/1608 ,  H01L21/02002 ,  H01L21/2007 ,  H01L21/56 ,  H01L23/291 ,  H01L23/298 ,  H01L29/1075 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A composite wafer includes a substrate and a SiC-based functional layer. The substrate includes a porous carbon substrate core and an encapsulating layer encapsulating the substrate core. The SiC-based functional layer comprises, at an interface region with the encapsulating layer, at least one of: a carbide and a silicide formed by reaction of a portion of the SiC-based functional layer with a carbide-and-silicide-forming metal. An amount of the carbide-and-silicide-forming metal, integrated over the thickness of the functional layer, is 10−4 mg/cm2 to 0.1 mg/cm2.

Abstract translation: 复合晶片包括基板和SiC基功能层。 衬底包括多孔碳衬底芯和封装衬底芯的封装层。 所述SiC基功能层在与所述封装层的界面区域处包含以下中的至少一种：碳化物和由所述SiC基功能层的一部分与碳化物和硅化物形成金属反应形成的硅化物 。 在功能层的厚度上积分的碳化物和硅化物形成金属的量为10-4mg / cm 2至0.1mg / cm 2。

公开(公告)号：US09147639B2

公开(公告)日：2015-09-29

申请号：US14015353

申请日：2013-08-30

Applicant: Infineon Technologies AG

Inventor： Mathias Vaupel ,  Günther Ruhl

IPC: H01L21/66 ,  H01L23/48 ,  H01L21/56 ,  H01L21/673 ,  H01L23/29 ,  H01L23/31

CPC classification number: H01L23/48 ,  H01L21/56 ,  H01L21/673 ,  H01L21/6835 ,  H01L21/6836 ,  H01L22/12 ,  H01L23/291 ,  H01L23/3171 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of processing semiconductor dies is provided. Each semiconductor die has a first side with one or more terminals, a second side opposite the first side and sidewalls extending between the first and the second sides. The semiconductor dies are processed by placing the semiconductor dies on a support substrate so that the first side of each semiconductor die faces the support substrate and the second side faces away from the support substrate. A coating is applied to the semiconductor dies placed on the support substrate. The coating has a lower reflectivity than the first side of the semiconductor dies. The coating covers the second side and at least a region of the sidewalls nearest the second side of each semiconductor die. The semiconductor dies are removed from the support substrate after applying the coating for further processing as loose dies such as taping.

Abstract translation: 提供一种处理半导体管芯的方法。 每个半导体管芯具有具有一个或多个端子的第一侧面，与第一侧面相对的第二侧面和在第一和第二侧面之间延伸的侧壁。 通过将半导体管芯放置在支撑衬底上，使得每个半导体管芯的第一侧面向支撑衬底并且第二侧面远离支撑衬底来处理半导体管芯。 将涂层施加到放置在支撑基板上的半导体管芯。 涂层具有比半导体管芯的第一侧更低的反射率。 涂层覆盖最靠近每个半导体管芯的第二侧的第二侧和至少一个侧壁的区域。 在将涂层施加作为进一步加工的松散模具如胶带之后，将半导体管芯从支撑基板上移除。

公开(公告)号：US20150061113A1

公开(公告)日：2015-03-05

申请号：US14015353

申请日：2013-08-30

Applicant: Infineon Technologies AG

Inventor： Mathias Vaupel ,  Günther Ruhl

IPC: H01L23/48 ,  H01L21/66 ,  H01L21/673 ,  H01L21/56

CPC classification number: H01L23/48 ,  H01L21/56 ,  H01L21/673 ,  H01L21/6835 ,  H01L21/6836 ,  H01L22/12 ,  H01L23/291 ,  H01L23/3171 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of processing semiconductor dies is provided. Each semiconductor die has a first side with one or more terminals, a second side opposite the first side and sidewalls extending between the first and the second sides. The semiconductor dies are processed by placing the semiconductor dies on a support substrate so that the first side of each semiconductor die faces the support substrate and the second side faces away from the support substrate. A coating is applied to the semiconductor dies placed on the support substrate. The coating has a lower reflectivity than the first side of the semiconductor dies. The coating covers the second side and at least a region of the sidewalls nearest the second side of each semiconductor die. The semiconductor dies are removed from the support substrate after applying the coating for further processing as loose dies such as taping.

Abstract translation: 提供一种处理半导体管芯的方法。 每个半导体管芯具有具有一个或多个端子的第一侧面，与第一侧面相对的第二侧面和在第一和第二侧面之间延伸的侧壁。 通过将半导体管芯放置在支撑衬底上，使得每个半导体管芯的第一侧面向支撑衬底并且第二侧面远离支撑衬底来处理半导体管芯。 将涂层施加到放置在支撑基板上的半导体管芯。 涂层具有比半导体管芯的第一侧更低的反射率。 涂层覆盖最靠近每个半导体管芯的第二侧的第二侧和至少一个侧壁的区域。 在将涂层施加作为进一步加工的松散模具如胶带之后，将半导体管芯从支撑基板上移除。

公开(公告)号：US20150132614A1

公开(公告)日：2015-05-14

申请号：US14077362

申请日：2013-11-12

Applicant: Infineon Technologies AG

Inventor： Klaus Elian ,  Jochen Dangelmaier ,  Franz Michael Darrer ,  Thomas Müller ,  Mathias Vaupel ,  Manfred Fries ,  Günther Ruhl ,  Horst Theuss

IPC: H01M10/48

CPC classification number: H01M10/48 ,  H01M10/0525 ,  H01M10/486 ,  H04Q9/00 ,  H04Q2209/40 ,  H04Q2209/823 ,  Y02T10/7011

Abstract: A sensor arrangement according to an embodiment comprises a transmitter to be arranged inside a battery cell and to transmit a signal based on at least one sensed operational parameter of the battery cell wirelessly.

Abstract translation: 根据实施例的传感器装置包括要布置在电池单元内的发射器，并且基于无线地基于电池单元的至少一个感测的操作参数发送信号。