公开(公告)号：US12033972B2

公开(公告)日：2024-07-09

申请号：US17090941

申请日：2020-11-06

Applicant: Infineon Technologies AG

Inventor： Joachim Mahler ,  Michael Bauer ,  Jochen Dangelmaier ,  Reimund Engl ,  Johann Gatterbauer ,  Frank Hille ,  Michael Huettinger ,  Werner Kanert ,  Heinrich Koerner ,  Brigitte Ruehle ,  Francisco Javier Santos Rodriguez ,  Antonio Vellei

IPC: H01L23/00 ,  H01L21/02 ,  H01L23/29 ,  H01L23/31 ,  H01L23/495

CPC classification number: H01L24/48 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02288 ,  H01L23/293 ,  H01L23/3135 ,  H01L23/3142 ,  H01L23/4952 ,  H01L23/49582 ,  H01L24/03 ,  H01L24/05 ,  H01L24/45 ,  H01L24/83 ,  H01L24/85 ,  H01L21/02266 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0228 ,  H01L23/3107 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L2224/0346 ,  H01L2224/03826 ,  H01L2224/03827 ,  H01L2224/03831 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05139 ,  H01L2224/05147 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05657 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05681 ,  H01L2224/05684 ,  H01L2224/2919 ,  H01L2224/32245 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/45573 ,  H01L2224/45611 ,  H01L2224/45618 ,  H01L2224/45639 ,  H01L2224/45644 ,  H01L2224/45649 ,  H01L2224/45655 ,  H01L2224/45657 ,  H01L2224/45664 ,  H01L2224/45666 ,  H01L2224/4567 ,  H01L2224/45671 ,  H01L2224/45672 ,  H01L2224/4568 ,  H01L2224/45686 ,  H01L2224/4569 ,  H01L2224/45693 ,  H01L2224/48091 ,  H01L2224/48106 ,  H01L2224/4813 ,  H01L2224/48247 ,  H01L2224/4846 ,  H01L2224/48463 ,  H01L2224/48465 ,  H01L2224/4847 ,  H01L2224/48507 ,  H01L2224/73265 ,  H01L2224/85205 ,  H01L2224/85375 ,  H01L2224/85801 ,  H01L2224/8592 ,  H01L2924/00014 ,  H01L2924/0132 ,  H01L2924/10253 ,  H01L2924/181 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2224/73265 ,  H01L2224/32245 ,  H01L2224/48247 ,  H01L2924/00012 ,  H01L2224/48465 ,  H01L2224/48247 ,  H01L2924/00012 ,  H01L2224/45144 ,  H01L2924/00015 ,  H01L2224/45139 ,  H01L2924/00015 ,  H01L2224/45565 ,  H01L2224/45147 ,  H01L2224/45664 ,  H01L2224/45572 ,  H01L2224/45147 ,  H01L2224/45664 ,  H01L2224/45644 ,  H01L2224/45147 ,  H01L2924/01046 ,  H01L2224/45639 ,  H01L2924/00014 ,  H01L2224/85205 ,  H01L2924/00014 ,  H01L2224/05644 ,  H01L2924/00014 ,  H01L2224/05639 ,  H01L2924/00014 ,  H01L2224/05664 ,  H01L2924/00014 ,  H01L2224/45565 ,  H01L2224/45147 ,  H01L2224/45669 ,  H01L2224/45565 ,  H01L2224/45147 ,  H01L2224/45644 ,  H01L2224/45565 ,  H01L2224/45139 ,  H01L2224/45565 ,  H01L2224/45147 ,  H01L2224/45611 ,  H01L2224/45565 ,  H01L2224/45147 ,  H01L2224/45618 ,  H01L2224/45565 ,  H01L2224/45147 ,  H01L2224/45649 ,  H01L2224/45565 ,  H01L2224/45147 ,  H01L2224/45655 ,  H01L2224/45565 ,  H01L2224/45147 ,  H01L2224/45657 ,  H01L2224/45565 ,  H01L2224/45147 ,  H01L2224/45666 ,  H01L2224/45655 ,  H01L2924/01029 ,  H01L2224/45565 ,  H01L2224/45147 ,  H01L2224/45639 ,  H01L2224/45664 ,  H01L2924/01028 ,  H01L2224/05624 ,  H01L2924/00014 ,  H01L2224/05655 ,  H01L2924/00014 ,  H01L2224/05681 ,  H01L2924/00014 ,  H01L2224/05657 ,  H01L2924/00014 ,  H01L2224/05666 ,  H01L2924/00014 ,  H01L2224/05684 ,  H01L2924/00014 ,  H01L2224/05147 ,  H01L2924/01056 ,  H01L2224/48465 ,  H01L2224/48247 ,  H01L2924/00 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2224/2919 ,  H01L2924/00014 ,  H01L2924/00014 ,  H01L2224/43848

Abstract: A method of forming an electrical contact is provided. The method may include depositing, by atomic layer deposition, a passivation layer over at least a region of a metal surface, wherein the passivation layer may include aluminum oxide, and electrically contacting the region of the metal surface with a metal contact structure, wherein the metal contact structure may include copper.

公开(公告)号：US11239176B2

公开(公告)日：2022-02-01

申请号：US16835627

申请日：2020-03-31

Applicant: Infineon Technologies AG

Inventor： Jochen Dangelmaier ,  Klaus Elian

IPC: H01L23/544 ,  H01L23/495

Abstract: A package comprising a carrier, an electronic component mounted on the carrier, and an identifier indicative of an origin of the package and being formed on and/or in the carrier is disclosed.

公开(公告)号：US10297536B2

公开(公告)日：2019-05-21

申请号：US15605093

申请日：2017-05-25

Applicant: Infineon Technologies AG

Inventor： Jochen Dangelmaier ,  Kim Huat Hoa ,  Hazrul Alang Abd Hamid ,  Andreas Allmeier ,  Dietmar Lang

IPC: H01L21/00 ,  H01L23/495 ,  H01L21/48 ,  H01L21/56 ,  H01L23/31

Abstract: A lead frame strip having a plurality of unit lead frames is provided. Each of the unit lead frames have a die paddle and a plurality of leads extending away from the die paddle. A first one of the unit lead frames is plated with an adhesion promoter plating material within a package outline area of the first unit lead frame. The package outline area includes one of the die paddles and interior portions of the leads. Wire bond sites are processed in the first unit lead frame before or after the plating of the first lead frame such that, after the plating of the first lead frame. The wire bond sites are substantially devoid of the adhesion promoter plating material. The wire bond sites are disposed within the package outline area at an end of the interior portions of the leads that is closest to the die paddle.

公开(公告)号：US09704786B2

公开(公告)日：2017-07-11

申请号：US14866050

申请日：2015-09-25

Applicant: Infineon Technologies AG

Inventor： Jochen Dangelmaier ,  Kim Huat Hoa ,  Hazrul Aland Abd Hamid ,  Andreas Allmeier ,  Dietmar Lang

IPC: H01L21/00 ,  H01L23/495 ,  H01L21/48 ,  H01L21/56

CPC classification number: H01L23/49541 ,  H01L21/4825 ,  H01L21/4835 ,  H01L21/56 ,  H01L23/3142 ,  H01L23/49524 ,  H01L23/49582 ,  H01L23/49586 ,  H01L2224/48247 ,  H01L2224/85011

Abstract: A lead frame strip having a plurality of unit lead frames is provided. Each of the unit lead frames includes a die paddle, a plurality of leads extending away from the die paddle, and a peripheral ring delineating interior portions of the leads from exterior portions of the leads. An adhesion promoter plating material is selectively plated within a package outline area of a first unit lead frame. The die paddle and the interior portions of the leads are disposed within the package outline area and the exterior portions of the leads are disposed outside of the package outline area. Wire bond sides are processed such that, after selectively plating the adhesion promoter plating material, the wire bond sites are substantially devoid of the adhesion promoter plating material. The wire bond sites are disposed within the package outline area and are spaced apart from the peripheral ring.

公开(公告)号：US20150279782A1

公开(公告)日：2015-10-01

申请号：US14735604

申请日：2015-06-10

Applicant: Infineon Technologies AG

Inventor： Henrik Ewe ,  Joachim Mahler ,  Manfred Mengel ,  Reimund Engl ,  Josef Hoeglauer ,  Jochen Dangelmaier

IPC: H01L23/538 ,  H01L23/495 ,  H01L21/288 ,  H01L21/768 ,  H01L21/02 ,  H01L21/311 ,  H01L23/31 ,  H01L23/498

CPC classification number: H01L23/5389 ,  H01L21/02282 ,  H01L21/02288 ,  H01L21/288 ,  H01L21/31105 ,  H01L21/4821 ,  H01L21/6835 ,  H01L21/76801 ,  H01L21/76871 ,  H01L21/76877 ,  H01L23/3107 ,  H01L23/49524 ,  H01L23/49534 ,  H01L23/49541 ,  H01L23/49562 ,  H01L23/49575 ,  H01L23/49822 ,  H01L23/49838 ,  H01L24/24 ,  H01L24/25 ,  H01L24/82 ,  H01L2221/68345 ,  H01L2224/24011 ,  H01L2224/2402 ,  H01L2224/24051 ,  H01L2224/24137 ,  H01L2224/24145 ,  H01L2224/24226 ,  H01L2224/24246 ,  H01L2224/24998 ,  H01L2224/32145 ,  H01L2224/32245 ,  H01L2224/73267 ,  H01L2224/76155 ,  H01L2224/82001 ,  H01L2224/82039 ,  H01L2224/82101 ,  H01L2224/82102 ,  H01L2225/06568 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01068 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/12032 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/19043 ,  H01L2924/00 ,  H05K3/4661

Abstract: A semiconductor device is disclosed. One embodiment includes a carrier, a semiconductor chip attached to the carrier, a first conducting line having a first thickness and being deposited over the semiconductor chip and the carrier and a second conducting line having a second thickness and being deposited over the semiconductor chip and the carrier. The first thickness is smaller than the second thickness.

公开(公告)号：US20150001646A1

公开(公告)日：2015-01-01

申请号：US13927865

申请日：2013-06-26

Applicant: Infineon Technologies AG

Inventor： Thomas MUELLER ,  Horst Theuss ,  Stefan Uwe Schindler ,  Dominik Kohl ,  Jochen Dangelmaier

IPC: H04R31/00 ,  B81B3/00

CPC classification number: H04R31/00 ,  B81B2201/0257 ,  B81B2207/092 ,  B81B2207/096 ,  B81C1/0023 ,  B81C1/00301 ,  H01L2224/05554 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/8592 ,  H01L2924/10158 ,  H01L2924/16195 ,  H04R1/086 ,  H04R19/005 ,  H04R19/04 ,  Y10T29/49121 ,  H01L2924/00014

Abstract: A microphone assembly is provided, wherein the pre-mold comprises a bent leadframe and a mold body, wherein the mold body is mold to at least partially encapsulate the bent leadframe to build the pre-mold comprising a cavity for accommodating a microphone, and wherein the pre-mold comprises a through-hole transmissive for sound waves.

Abstract translation: 提供了一种麦克风组件，其中预模具包括弯曲的引线框架和模具本体，其中模具主体被模制成至少部分地封装弯曲的引线框架以构建包括用于容纳麦克风的空腔的预模具，并且其中 预模具包括用于声波的透孔。

公开(公告)号：US11835600B2

公开(公告)日：2023-12-05

申请号：US17807002

申请日：2022-06-15

Applicant: Infineon Technologies AG

Inventor： Rainer Markus Schaller ,  Volker Strutz ,  Jochen Dangelmaier

IPC: G01R33/07 ,  G01R15/20 ,  G01R33/09

CPC classification number: G01R33/07 ,  G01R15/202 ,  G01R15/205 ,  G01R33/09

Abstract: What is proposed is a current sensor comprising a current rail and comprising a magnetic field sensor, wherein the magnetic field sensor is configured to measure a magnetic field induced by a current flowing through the current rail, wherein a first insulation layer and a second insulation layer are arranged between the current rail and the magnetic field sensor, wherein an interface between the first insulation layer and the second insulation layer is free of a contact with the current rail and/or is free of a contact with the magnetic field sensor.

公开(公告)号：US11073572B2

公开(公告)日：2021-07-27

申请号：US16250747

申请日：2019-01-17

Applicant: Infineon Technologies AG

Inventor： Jochen Dangelmaier ,  Rainer Markus Schaller

IPC: H01L23/495 ,  G01R33/00 ,  G01R33/07 ,  H01L23/31 ,  H01L23/00

Abstract: A current sensor device may include a routable molded lead frame that includes a molded substrate. The current sensor device may include a conductor and a semiconductor chip mounted to the molded substrate. The semiconductor chip may include a magnetic field sensor that is galvanically isolated from the conductor by the molded substrate and is configured to sense a magnetic field created by current flowing through the conductor. The current sensor device may include one or more leads configured to output a signal generated by the semiconductor chip. The one or more leads may be galvanically isolated from the conductor by the molded substrate.

公开(公告)号：US11024565B2

公开(公告)日：2021-06-01

申请号：US16382508

申请日：2019-04-12

Applicant: Infineon Technologies AG

Inventor： Jochen Dangelmaier ,  Kim Huat Hoa ,  Hazrul Alang Abd Hamid ,  Andreas Allmeier ,  Dietmar Lang

IPC: H01L23/495 ,  H01L23/31 ,  H01L23/00 ,  H01L21/48 ,  H01L21/56

Abstract: A semiconductor device includes a die paddle, a plurality of electrically conductive leads extending away from the die paddle, and an adhesion promoter plating material selectively formed on the electrically conductive leads such that outer portions of the leads are covered by the adhesion promoter plating material, and interior portions of the leads that are disposed between the die paddle and the respective outer portions of each lead are substantially devoid of the adhesion promoter plating material.

公开(公告)号：US10818805B2

公开(公告)日：2020-10-27

申请号：US16185837

申请日：2018-11-09

Applicant: Infineon Technologies AG

Inventor： Franz-Peter Kalz ,  Jochen Dangelmaier

IPC: H01L31/0216 ,  H01L31/18 ,  B81B7/02 ,  B81C1/00 ,  B81B7/00 ,  H01L31/0203 ,  H01L31/0232

Abstract: A semiconductor sensor device includes a substrate including a first main face and a second main face opposite the first main face, a semiconductor element including a sensing region, the semiconductor element on the first main face of the substrate and being electrically coupled to the substrate, a lid on the first main face of the substrate and forming a cavity, wherein the semiconductor element is in the cavity, and a vapor deposited dielectric coating covering the semiconductor element and the first main face of the substrate, the vapor deposited dielectric coating having an opening over the sensing region, wherein the second main face of the substrate is at least partially free of the vapor deposited dielectric layer.