Direct selective adhesion promotor plating

    公开(公告)号:US10297536B2

    公开(公告)日:2019-05-21

    申请号:US15605093

    申请日:2017-05-25

    摘要: A lead frame strip having a plurality of unit lead frames is provided. Each of the unit lead frames have a die paddle and a plurality of leads extending away from the die paddle. A first one of the unit lead frames is plated with an adhesion promoter plating material within a package outline area of the first unit lead frame. The package outline area includes one of the die paddles and interior portions of the leads. Wire bond sites are processed in the first unit lead frame before or after the plating of the first lead frame such that, after the plating of the first lead frame. The wire bond sites are substantially devoid of the adhesion promoter plating material. The wire bond sites are disposed within the package outline area at an end of the interior portions of the leads that is closest to the die paddle.

    Current sensor device with a routable molded lead frame

    公开(公告)号:US11073572B2

    公开(公告)日:2021-07-27

    申请号:US16250747

    申请日:2019-01-17

    摘要: A current sensor device may include a routable molded lead frame that includes a molded substrate. The current sensor device may include a conductor and a semiconductor chip mounted to the molded substrate. The semiconductor chip may include a magnetic field sensor that is galvanically isolated from the conductor by the molded substrate and is configured to sense a magnetic field created by current flowing through the conductor. The current sensor device may include one or more leads configured to output a signal generated by the semiconductor chip. The one or more leads may be galvanically isolated from the conductor by the molded substrate.

    Semiconductor sensor device and method for fabricating the same

    公开(公告)号:US10818805B2

    公开(公告)日:2020-10-27

    申请号:US16185837

    申请日:2018-11-09

    摘要: A semiconductor sensor device includes a substrate including a first main face and a second main face opposite the first main face, a semiconductor element including a sensing region, the semiconductor element on the first main face of the substrate and being electrically coupled to the substrate, a lid on the first main face of the substrate and forming a cavity, wherein the semiconductor element is in the cavity, and a vapor deposited dielectric coating covering the semiconductor element and the first main face of the substrate, the vapor deposited dielectric coating having an opening over the sensing region, wherein the second main face of the substrate is at least partially free of the vapor deposited dielectric layer.