公开(公告)号：US20240145588A1

公开(公告)日：2024-05-02

申请号：US18382816

申请日：2023-10-23

Applicant: Infineon Technologies AG

Inventor： Thomas Ralf SIEMIENIEC ,  Hans-Joachim Schulze ,  Werner Schustereder

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/16 ,  H01L29/66

CPC classification number: H01L29/7813 ,  H01L29/0696 ,  H01L29/1608 ,  H01L29/66734

Abstract: A vertical power semiconductor device includes a silicon carbide (SiC) semiconductor body having a first surface and a second surface opposite to each other along a vertical direction. The SiC semiconductor body includes at least one SiC semiconductor layer on a SiC semiconductor substrate. A pn junction is formed in the at least one SiC semiconductor layer. A first load electrode is arranged over the first surface. The vertical power semiconductor device further includes a plurality of first trenches extending into the SiC semiconductor substrate from the second surface. A second load electrode is arranged over the second surface. The second load electrode is electrically connected to the SiC semiconductor substrate via one or more sidewalls of the plurality of first trenches.

公开(公告)号：US20240055257A1

公开(公告)日：2024-02-15

申请号：US18360459

申请日：2023-07-27

Applicant: Infineon Technologies AG

Inventor： Saurabh Roy ,  Werner Schustereder ,  Ravi Keshav Joshi ,  Hans-Joachim Schulze ,  Daria Krasnozhon

IPC: H01L21/04 ,  H01L29/45 ,  H01L29/16 ,  H01L29/04

CPC classification number: H01L21/0485 ,  H01L29/452 ,  H01L29/1608 ,  H01L29/045

Abstract: The disclosure relates to a method for manufacturing a contact on a SiC substrate, wherein the method includes: providing a crystalline SiC substrate; modifying a crystal structure in a surface area of the SiC substrate such that a carbon-enriched SiC portion is generated in the surface area; forming a contact layer on the SiC substrate by depositing a metallic contact material onto the surface area that includes the carbon-enriched SiC portion; and thermal annealing of at least a part of the carbon-enriched SiC portion of the SiC substrate and at least a part of the contact layer, such that a ternary metallic phase portion including at least the metallic contact material, silicon, and carbon is generated. Furthermore, SiC semiconductor devices are described, which include a crystalline SiC substrate and a contact layer including a ternary metallic phase portion directly in contact with the SiC substrate surface.

公开(公告)号：US11557506B2

公开(公告)日：2023-01-17

申请号：US17104559

申请日：2020-11-25

Applicant: Infineon Technologies AG

Inventor： Werner Schustereder ,  Alexander Breymesser ,  Mihai Draghici ,  Tobias Franz Wolfgang Hoechbauer ,  Wolfgang Lehnert ,  Hans-Joachim Schulze ,  Marko David Swoboda

IPC: H01L21/00 ,  H01L21/762 ,  H01L21/768 ,  H01L21/265 ,  H01L21/3115 ,  H01L21/78

Abstract: Methods for processing a semiconductor substrate are proposed. An example of a method includes forming cavities in the semiconductor substrate by implanting ions through a first surface of the semiconductor substrate. The cavities define a separation layer in the semiconductor substrate. A semiconductor layer is formed on the first surface of the semiconductor substrate. Semiconductor device elements are formed in the semiconductor layer. The semiconductor substrate is separated along the separation layer into a first substrate part including the semiconductor layer and a second substrate part.

公开(公告)号：US10541301B2

公开(公告)日：2020-01-21

申请号：US15854341

申请日：2017-12-26

Applicant: Infineon Technologies AG

Inventor： Hans-Joachim Schulze ,  Wolfgang Jantscher ,  Roland Rupp ,  Werner Schustereder ,  Hans Weber

IPC: H01L29/06 ,  H01L21/04 ,  H01L21/266 ,  H01L21/265 ,  H01L29/16 ,  H01L29/20

Abstract: A method of producing a semiconductor device includes providing a semiconductor body including a semiconductor body material having a dopant diffusion coefficient that is smaller than the corresponding dopant diffusion coefficient of silicon. At least one first semiconductor region doped with dopants of a first conductivity type is produced in the semiconductor body, including by applying a first implantation of first implantation ions. At least one second semiconductor region adjacent to the at least one first semiconductor region and doped with dopants of a second conductivity type complementary to the first conductivity type is produced in the semiconductor body, including by applying a second implantation of second implantation ions.

公开(公告)号：US10475881B2

公开(公告)日：2019-11-12

申请号：US15665905

申请日：2017-08-01

Applicant: Infineon Technologies AG

Inventor： Alexander Breymesser ,  Hans-Joachim Schulze ,  Holger Schulze ,  Werner Schustereder

IPC: H01L29/06 ,  H01L21/268 ,  H01L21/324 ,  H01L29/08 ,  H01L29/167 ,  H01L29/739 ,  H01L29/861 ,  H01L29/36 ,  H01L21/265

Abstract: Crystal lattice vacancies are generated in a pretreated section of a semiconductor layer directly adjoining a process surface. Dopants are implanted at least into the pretreated section. A melt section of the semiconductor layer is heated by irradiating the process surface with a laser beam activating the implanted dopants at least in the melt section.

公开(公告)号：US10002930B2

公开(公告)日：2018-06-19

申请号：US15365627

申请日：2016-11-30

Applicant: Infineon Technologies AG

Inventor： Roland Rupp ,  Jens Peter Konrath ,  Francisco Javier Santos Rodriguez ,  Carsten Schaeffer ,  Hans-Joachim Schulze ,  Werner Schustereder ,  Guenther Wellenzohn

IPC: H01L29/45 ,  H01L21/28 ,  H01L29/40 ,  H01L21/02 ,  H01L21/04 ,  H01L21/225 ,  H01L29/47 ,  H01L29/16 ,  H01L21/285 ,  H01L29/20

CPC classification number: H01L29/401 ,  H01L21/02697 ,  H01L21/043 ,  H01L21/046 ,  H01L21/0485 ,  H01L21/0495 ,  H01L21/2258 ,  H01L21/28575 ,  H01L29/0619 ,  H01L29/1608 ,  H01L29/20 ,  H01L29/45 ,  H01L29/452 ,  H01L29/47 ,  H01L29/861 ,  H01L29/872

Abstract: Disclosed is a method. The method includes forming a metal layer on a first surface of a semiconductor body; irradiating the metal layer with particles to move metal atoms from the metal layer into the semiconductor body and form a metal atom containing region in the semiconductor body; and annealing the semiconductor body. The annealing includes heating at least the metal atom containing region to a temperature of less than 500° C.

公开(公告)号：US09853137B2

公开(公告)日：2017-12-26

申请号：US14935830

申请日：2015-11-09

Applicant: Infineon Technologies AG

Inventor： Moriz Jelinek ,  Johannes Georg Laven ,  Helmut Oefner ,  Hans-Joachim Schulze ,  Werner Schustereder

IPC: H01L21/00 ,  H01L29/739 ,  H01L21/263 ,  H01L21/324 ,  H01L21/66 ,  H01L29/10 ,  H01L29/36

Abstract: A method for forming a semiconductor device comprises implanting a defined dose of protons into a semiconductor substrate and tempering the semiconductor substrate according to a defined temperature profile. At least one of the defined dose of protons and the defined temperature profile is selected depending on a carbon-related parameter indicating information on a carbon concentration within at least a part of the semiconductor substrate.

公开(公告)号：US09809877B2

公开(公告)日：2017-11-07

申请号：US15189209

申请日：2016-06-22

Applicant: Infineon Technologies AG

Inventor： Alexander Breymesser ,  Stephan Voss ,  Hans-Joachim Schulze ,  Werner Schustereder

IPC: C23C14/48 ,  H01J37/147 ,  H01J37/20 ,  H01J37/317 ,  H01L29/06 ,  H01L29/744 ,  H01L29/36 ,  H01L29/861 ,  H01L21/265 ,  H01L21/687 ,  H01L29/45

CPC classification number: C23C14/48 ,  H01J37/1477 ,  H01J37/20 ,  H01J37/3171 ,  H01J2237/20214 ,  H01J2237/30483 ,  H01L21/265 ,  H01L21/68764 ,  H01L29/0615 ,  H01L29/0623 ,  H01L29/0638 ,  H01L29/0657 ,  H01L29/36 ,  H01L29/45 ,  H01L29/744 ,  H01L29/861

Abstract: An ion implantation apparatus includes an ion beam directing unit, a substrate support, and a controller. The controller is configured to effect a relative movement between an ion beam passing the ion beam directing unit and the substrate support. A beam track of the ion beam on a substrate mounted on the substrate support includes circles or a spiral.

公开(公告)号：US20170243747A1

公开(公告)日：2017-08-24

申请号：US15435034

申请日：2017-02-16

Applicant: Infineon Technologies AG

Inventor： Michael Brugger ,  Moriz Jelinek ,  Johannes Georg Laven ,  Hans-Joachim Schulze ,  Werner Schustereder

IPC: H01L21/265 ,  H01L21/66

CPC classification number: H01L21/26586 ,  H01L22/12 ,  H01L22/20

Abstract: A method for implanting ions into a semiconductor substrate includes performing a test implantation of ions into a semiconductor substrate. The ions of the test implantation are implanted with a first implantation angle range over the semiconductor substrate. Further, the method includes determining an implantation angle offset based on the semiconductor substrate after the test implantation and adjusting a tilt angle of the semiconductor substrate with respect to an implantation direction based on the determined implantation angle offset. Additionally, the method includes performing at least one target implantation of ions into the semiconductor substrate after the adjustment of the tilt angle. The ions of the at least one target implantation are implanted with a second implantation angle range over the semiconductor substrate. Further, the first implantation angle range is larger than the second implantation angle range.

公开(公告)号：US09728627B2

公开(公告)日：2017-08-08

申请号：US14935830

申请日：2015-11-09

Applicant: Infineon Technologies AG

Inventor： Moriz Jelinek ,  Johannes Georg Laven ,  Helmut Oefner ,  Hans-Joachim Schulze ,  Werner Schustereder

IPC: H01L21/00 ,  H01L29/739 ,  H01L29/36 ,  H01L29/10 ,  H01L21/324 ,  H01L21/263 ,  H01L21/66

Abstract: A method for forming a semiconductor device comprises implanting a defined dose of protons into a semiconductor substrate and tempering the semiconductor substrate according to a defined temperature profile. At least one of the defined dose of protons and the defined temperature profile is selected depending on a carbon-related parameter indicating information on a carbon concentration within at least a part of the semiconductor substrate.