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公开(公告)号：US20200264373A1
公开(公告)日：2020-08-20
申请号：US16814825
申请日：2020-03-10
Applicant: INPHI CORPORATION
Inventor： Jie LIN , Masaki KATO
Abstract: The present application discloses a Transverse Electric (TE) polarizer. The TE polarizer includes a semiconductor substrate having an oxide layer. The TE polarizer further includes a waveguide embedded in the oxide layer. Additionally, the TE polarizer includes a plate structure embedded in the oxide layer substantially in parallel to the waveguide with a gap distance. In an embodiment, the plate structure induces an extra transmission loss to a Transverse Magnetic (TM) mode in a light wave traveling through the waveguide.
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公开(公告)号：US20180284348A1
公开(公告)日：2018-10-04
申请号：US15881428
申请日：2018-01-26
Applicant: INPHI CORPORATION
Inventor： Jie LIN
Abstract: A waveguide-based polarization splitter-rotator (PSR) includes a converter with tapered rib-structure configured to convert TM0/TE0 polarization mode of an input light to a TE1/TE0 mode, a splitter coupled to the first plane for splitting the input light evenly to a first wave at a first port and a second wave at a second port. Furthermore, the PSR includes a phase shifter having a first arm coupled to first port and a second arm coupled to the second port. The first arm guides the first wave to a third port with no phase shift while the second arm adds 90 or 270 degrees to the second wave. The PSR also includes a 2×2 MMI coupler for coupling the first wave and the second wave to output a first output light in TE0 mode exclusively from TM0 mode and a second output light in TE0 mode exclusively from TE0 mode.
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公开(公告)号：US20210325606A1
公开(公告)日：2021-10-21
申请号：US16849197
申请日：2020-04-15
Applicant: INPHI CORPORATION
Inventor： Jie LIN
Abstract: An optical splitter includes a silicon-on-insulator substrate having a cladding layer. The optical splitter also includes a first waveguide of a first width and a first length buried in the cladding layer and a second waveguide of a second width and a second length buried in the cladding layer disposed in close proximity of the first waveguide by a gap distance. A ratio of the second width over the first width is configured to be smaller than 1 while the first length, the second length, and the gap distance are configured to allow evanescent coupling of a first confined mode of an optical signal in the first waveguide into the second waveguide with a certain splitting ratio being achieved in a range of 1% to
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公开(公告)号：US20200257127A1
公开(公告)日：2020-08-13
申请号：US16274826
申请日：2019-02-13
Applicant: INPHI CORPORATION
Inventor： Jie LIN
IPC: G02B27/28
Abstract: The present application discloses a polarization beam splitter (PBS). The PBS includes a silicon substrate and a planar structure formed thereon characterized by an isosceles trapezoid shape with a first parallel side and a second parallel side connected by two tapered sides. The first parallel side has longer width than the second parallel side, both of which is separated by a length no greater than 100 μm along a line of symmetry bisecting the pair of parallel sides. The PBS further includes a pair of input ports coupled to the first parallel side and a pair of output ports coupled to the second parallel side. The planar structure is configured to receive an input light wave of any wavelength in C-band via one input port and split to a TE-mode light wave and a TM-mode light wave respectively outputting to the pair of output ports.
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公开(公告)号：US20180172913A1
公开(公告)日：2018-06-21
申请号：US15385686
申请日：2016-12-20
Applicant: INPHI CORPORATION
Inventor： Jie LIN
CPC classification number: G02B6/2773 , G02B6/1228 , G02B6/125 , G02B6/126 , G02B6/2726 , G02B6/2813 , G02B2006/12061
Abstract: A polarization beam splitter includes a silicon waveguide body of a thickness in rectangular shape with a width and a length between a first end plane and a second end plane. Two input ports are formed in the first end plane at two separate locations respectively next to two opposing length edges. The silicon waveguide body is configured to generate a plurality of direct or mirror images of an input optical signal provided through at least one of the two input ports. Two output ports are formed in the second end plane, one at a bar-position being configured to output a first output signal substantially in TE polarization mode and another at a cross-position being configured to output a second output signal substantially in TM polarization mode. Preferably, the width is 2.6 μm and the length is 40 μm with the thickness of a silicon layer of a SOI substrate.
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Patent Agency Ranking
公开(公告)号：US20220075115A1
公开(公告)日：2022-03-10
申请号：US17012629
申请日：2020-09-04
Applicant: INPHI CORPORATION
Inventor： Jie LIN , Masaki KATO , Bruno TOURETTE , Brian TAYLOR
Abstract: A method for making a pair of photodiodes to detect low-power optical signal includes providing a waveguide including one or more branches in a silicon photonics substrate to deliver an input optical signal to the silicon photonics integrated circuit; forming a pair of nearly redundant photodiodes in silicon photonics platform in the silicon photonics substrate. coupling a first one of the pair of nearly redundant photodiodes optically to each of the one or more branches for receiving the input optical signal combined from all of the one or more branches; coupling a second one of the pair of nearly redundant photodiodes electrically in series to the first one of the pair of nearly redundant photodiodes; and drawing a current from the first one of the pair of nearly redundant photodiodes under a reversed bias voltage applied to the pair of nearly redundant photodiodes.
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公开(公告)号：US20200018903A1
公开(公告)日：2020-01-16
申请号：US16389078
申请日：2019-04-19
Applicant: INPHI CORPORATION
Inventor： Jie LIN , Masaki KATO
Abstract: The present application discloses a Transverse Electric (TE) polarizer. The TE polarizer includes a semiconductor substrate having an oxide layer. The TE polarizer further includes a waveguide embedded in the oxide layer. Additionally, the TE polarizer includes a plate structure embedded in the oxide layer substantially in parallel to the waveguide with a gap distance. In an embodiment, the plate structure induces an extra transmission loss to a Transverse Magnetic (TM) mode in a light wave traveling through the waveguide.
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公开(公告)号：US20170357053A1
公开(公告)日：2017-12-14
申请号：US15671905
申请日：2017-08-08
Applicant: INPHI CORPORATION
Inventor： Jie LIN
CPC classification number: G02B6/2773 , G02B6/102 , G02B6/105 , G02B6/126 , G02B6/2726 , G02B6/274 , G02B6/29344
Abstract: A compact polarization beam splitter is formed by cascading two stages of three restricted MMIs. Each MIMI is configured to set ultra compact width and length for a rectangular waveguide body to limit no more than 4 modes therein working as a polarization beam splitter in a 50 nm wavelength window around 1300 nm. Each MMI is further configured to couple an input at a first end and a TE bar output and a TM cross output at a second end of the rectangular waveguide body. The locations of the input/output waveguide ports are designated to be a distance of ⅙ of the width away from a middle line from the first end to the second end. Two second-stage MMIs have their inputs coupled to the TE bar output and the TM cross output of the first-stage MMI and provide a second-stage TE bar output and a second-stage TM cross output, respectively.
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公开(公告)号：US20180321443A1
公开(公告)日：2018-11-08
申请号：US16025890
申请日：2018-07-02
Applicant: Inphi Corporation
Inventor： Jie LIN
CPC classification number: G02B6/29344 , G02B6/12007 , G02B6/2938 , G02B6/29397 , G02B2006/12061
Abstract: A multiplexer/demultiplexer for at least two wavelengths in O-band. The multiplexer/demultiplexer includes a silicon waveguide block having a first port, a second/third port respectively in bar/cross position at an opposing end plane relative to the first port. The silicon waveguide block is configured to provide a general interference excitation of a light wave of a first wavelength and a second wavelength respectively selected from two windows in O-band. The light wave is either inputted via the first port and split into a first output light of the first wavelength out of the second port and a second output light of the second wavelength out of the third port, or is combined of a first input light of the first wavelength from the second port and a second input light of the second wavelength from the third port and outputted via the first port with both wavelengths.
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公开(公告)号：US20180261591A1
公开(公告)日：2018-09-13
申请号：US15979046
申请日：2018-05-14
Applicant: INPHI CORPORATION
Inventor： Jie LIN , Masaki KATO
IPC: H01L27/02 , H01L31/18 , H01L31/103 , H01L31/028 , G02B6/12 , H01L31/02 , H01L27/144 , H01L31/0232
CPC classification number: H01L27/0248 , G02B6/12 , G02B6/12004 , G02B6/4275 , G02B2006/12123 , H01L27/1443 , H01L31/02005 , H01L31/02019 , H01L31/022408 , H01L31/02327 , H01L31/028 , H01L31/103 , H01L31/1804
Abstract: An integrated photo detector with enhanced electrostatic discharge damage (ESD) protection. The integrated photo detector includes a first photodiode formed in the SOI substrate and associated with a first p-electrode and a first n-electrode. Additionally, the integrated photo detector includes a second photodiode formed in the SOI substrate associated with a second p-electrode and a second n-electrode forming a capacitance no larger than a few femto Faradays. Moreover, the integrated photo detector includes a first electrode and a second electrode disposed respectively on the SOI substrate. The first/second electrode is respectively connected to the first p/n-electrode via a first/second metallic layer patterned with a reduced width from the first/second electrode to the first p/n-electrode and connected to the second p/n-electrode via a first/second metallic wire to make a parallel coupling between the first photodiode and the second photodiode with an ESD threshold of about 100V.
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