公开(公告)号：US10957796B2

公开(公告)日：2021-03-23

申请号：US14059398

申请日：2013-10-21

Applicant: INTEL CORPORATION

Inventor： Anand S. Murthy ,  Daniel Bourne Aubertine ,  Tahir Ghani ,  Abhijit Jayant Pethe

IPC: H01L29/78 ,  H01L21/02 ,  H01L29/165 ,  H01L29/66 ,  H01L29/08 ,  H01L21/28 ,  H01L29/49

Abstract: Embodiments of the present invention describe a epitaxial region on a semiconductor device. In one embodiment, the epitaxial region is deposited onto a substrate via cyclical deposition-etch process. Cavities created underneath the spacer during the cyclical deposition-etch process are backfilled by an epitaxial cap layer. The epitaxial region and epitaxial cap layer improves electron mobility at the channel region, reduces short channel effects and decreases parasitic resistance.

公开(公告)号：US10580860B2

公开(公告)日：2020-03-03

申请号：US16358613

申请日：2019-03-19

Applicant: Intel Corporation

Inventor： Seiyon Kim ,  Kelin J. Kuhn ,  Tahir Ghani ,  Anand S. Murthy ,  Mark Armstrong ,  Rafael Rios ,  Abhijit Jayant Pethe ,  Willy Rachmady

IPC: H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L29/08 ,  H01L29/78 ,  H01L29/786 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/3115 ,  B82Y40/00

Abstract: A nanowire device having a plurality of internal spacers and a method for forming said internal spacers are disclosed. In an embodiment, a semiconductor device comprises a nanowire stack disposed above a substrate, the nanowire stack having a plurality of vertically-stacked nanowires, a gate structure wrapped around each of the plurality of nanowires, defining a channel region of the device, the gate structure having gate sidewalls, a pair of source/drain regions on opposite sides of the channel region; and an internal spacer on a portion of the gate sidewall between two adjacent nanowires, internal to the nanowire stack. In an embodiment, the internal spacers are formed by depositing spacer material in dimples etched adjacent to the channel region. In an embodiment, the dimples are etched through the channel region. In another embodiment, the dimples are etched through the source/drain region.

公开(公告)号：US11004739B2

公开(公告)日：2021-05-11

申请号：US16219795

申请日：2018-12-13

Applicant: Intel Corporation

Inventor： Abhijit Jayant Pethe ,  Tahir Ghani ,  Mark Bohr ,  Clair Webb ,  Harry Gomez ,  Annalisa Cappellani

IPC: H01L21/768 ,  H01L29/78 ,  H01L29/66 ,  H01L21/28 ,  H01L21/311 ,  H01L23/522 ,  H01L23/532

Abstract: Gate contact structures disposed over active portions of gates and methods of forming such gate contact structures are described. For example, a semiconductor structure includes a substrate having an active region and an isolation region. A gate structure has a portion disposed above the active region and a portion disposed above the isolation region of the substrate. Source and drain regions are disposed in the active region of the substrate, on either side of the portion of the gate structure disposed above the active region. A gate contact structure is disposed on the portion of the gate structure disposed above the active region of the substrate.

公开(公告)号：US09859368B2

公开(公告)日：2018-01-02

申请号：US15333123

申请日：2016-10-24

Applicant: Intel Corporation

Inventor： Seiyon Kim ,  Kelin J. Kuhn ,  Tahir Ghani ,  Anand S. Murthy ,  Mark Armstrong ,  Rafael Rios ,  Abhijit Jayant Pethe ,  Willy Rachmady

IPC: H01L29/06 ,  H01L21/3105 ,  H01L21/306 ,  H01L21/3115 ,  H01L29/78 ,  H01L29/786 ,  H01L29/08 ,  H01L29/66 ,  B82Y40/00

CPC classification number: H01L29/0673 ,  B82Y40/00 ,  H01L21/30604 ,  H01L21/3105 ,  H01L21/31155 ,  H01L29/0847 ,  H01L29/42392 ,  H01L29/66545 ,  H01L29/66553 ,  H01L29/78 ,  H01L29/78696

Abstract: A nanowire device having a plurality of internal spacers and a method for forming said internal spacers are disclosed. In an embodiment, a semiconductor device comprises a nanowire stack disposed above a substrate, the nanowire stack having a plurality of vertically-stacked nanowires, a gate structure wrapped around each of the plurality of nanowires, defining a channel region of the device, the gate structure having gate sidewalls, a pair of source/drain regions on opposite sides of the channel region; and an internal spacer on a portion of the gate sidewall between two adjacent nanowires, internal to the nanowire stack. In an embodiment, the internal spacers are formed by depositing spacer material in dimples etched adjacent to the channel region. In an embodiment, the dimples are etched through the channel region. In another embodiment, the dimples are etched through the source/drain region.

公开(公告)号：US11908934B2

公开(公告)日：2024-02-20

申请号：US17161534

申请日：2021-01-28

Applicant: Intel Corporation

Inventor： Anand S. Murthy ,  Daniel Bourne Aubertine ,  Tahir Ghani ,  Abhijit Jayant Pethe

IPC: H01L29/78 ,  H01L21/02 ,  H01L29/08 ,  H01L29/165 ,  H01L29/66 ,  H01L21/28 ,  H01L29/49 ,  H01L29/423

CPC classification number: H01L29/7834 ,  H01L21/0243 ,  H01L21/02057 ,  H01L21/0262 ,  H01L21/02381 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02636 ,  H01L29/0847 ,  H01L29/165 ,  H01L29/66636 ,  H01L29/66795 ,  H01L29/78 ,  H01L29/785 ,  H01L29/7848 ,  H01L21/28079 ,  H01L29/495 ,  H01L29/66545 ,  H01L29/7853

Abstract: Embodiments of the present invention describe a epitaxial region on a semiconductor device. In one embodiment, the epitaxial region is deposited onto a substrate via cyclical deposition-etch process. Cavities created underneath the spacer during the cyclical deposition-etch process are backfilled by an epitaxial cap layer. The epitaxial region and epitaxial cap layer improves electron mobility at the channel region, reduces short channel effects and decreases parasitic resistance.

公开(公告)号：US10229981B2

公开(公告)日：2019-03-12

申请号：US15335281

申请日：2016-10-26

Applicant: Intel Corporation

Inventor： Annalisa Cappellani ,  Abhijit Jayant Pethe ,  Tahir Ghani ,  Harry Gomez

IPC: H01L29/06 ,  H01L29/423 ,  H01L21/84 ,  H01L21/306 ,  H01L29/66 ,  H01L29/08 ,  B82Y10/00 ,  H01L29/775 ,  H01L29/78 ,  H01L29/786 ,  H01L29/40 ,  H01L29/417 ,  H01L21/762

Abstract: Strained gate-all-around semiconductor devices formed on globally or locally isolated substrates are described. For example, a semiconductor device includes a semiconductor substrate. An insulating structure is disposed above the semiconductor substrate. A three-dimensional channel region is disposed above the insulating structure. Source and drain regions are disposed on either side of the three-dimensional channel region and on an epitaxial seed layer. The epitaxial seed layer is composed of a semiconductor material different from the three-dimensional channel region and disposed on the insulating structure. A gate electrode stack surrounds the three-dimensional channel region with a portion disposed on the insulating structure and laterally adjacent to the epitaxial seed layer.

公开(公告)号：US10192783B2

公开(公告)日：2019-01-29

申请号：US15266819

申请日：2016-09-15

Applicant: Intel Corporation

Inventor： Abhijit Jayant Pethe ,  Tahir Ghani ,  Mark Bohr ,  Clair Webb ,  Harry Gomez ,  Annalisa Cappellani

IPC: H01L21/70 ,  H01L21/768 ,  H01L29/66 ,  H01L29/78 ,  H01L21/28 ,  H01L21/311 ,  H01L23/522 ,  H01L23/532

Abstract: Gate contact structures disposed over active portions of gates and methods of forming such gate contact structures are described. For example, a semiconductor structure includes a substrate having an active region and an isolation region. A gate structure has a portion disposed above the active region and a portion disposed above the isolation region of the substrate. Source and drain regions are disposed in the active region of the substrate, on either side of the portion of the gate structure disposed above the active region. A gate contact structure is disposed on the portion of the gate structure disposed above the active region of the substrate.

公开(公告)号：US10121856B2

公开(公告)日：2018-11-06

申请号：US15859226

申请日：2017-12-29

Applicant: Intel Corporation

Inventor： Seiyon Kim ,  Kelin J. Kuhn ,  Tahir Ghani ,  Anand S. Murthy ,  Mark Armstrong ,  Rafael Rios ,  Abhijit Jayant Pethe ,  Willy Rachmady

IPC: H01L29/06 ,  H01L29/66 ,  H01L29/78 ,  H01L29/786 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/3115 ,  H01L29/08 ,  H01L29/423 ,  B82Y40/00

Abstract: A nanowire device having a plurality of internal spacers and a method for forming said internal spacers are disclosed. In an embodiment, a semiconductor device comprises a nanowire stack disposed above a substrate, the nanowire stack having a plurality of vertically-stacked nanowires, a gate structure wrapped around each of the plurality of nanowires, defining a channel region of the device, the gate structure having gate sidewalls, a pair of source/drain regions on opposite sides of the channel region; and an internal spacer on a portion of the gate sidewall between two adjacent nanowires, internal to the nanowire stack. In an embodiment, the internal spacers are formed by depositing spacer material in dimples etched adjacent to the channel region. In an embodiment, the dimples are etched through the channel region. In another embodiment, the dimples are etched through the source/drain region.

公开(公告)号：US12294027B2

公开(公告)日：2025-05-06

申请号：US18407007

申请日：2024-01-08

Applicant: Intel Corporation

Inventor： Anand S. Murthy ,  Daniel Boune Aubertine ,  Tahir Ghani ,  Abhijit Jayant Pethe

IPC: H01L29/78 ,  H01L21/02 ,  H01L21/28 ,  H01L29/08 ,  H01L29/165 ,  H01L29/423 ,  H01L29/49 ,  H01L29/66

Abstract: Embodiments of the present invention describe a epitaxial region on a semiconductor device. In one embodiment, the epitaxial region is deposited onto a substrate via cyclical deposition-etch process. Cavities created underneath the spacer during the cyclical deposition-etch process are backfilled by an epitaxial cap layer. The epitaxial region and epitaxial cap layer improves electron mobility at the channel region, reduces short channel effects and decreases parasitic resistance.

公开(公告)号：US12278144B2

公开(公告)日：2025-04-15

申请号：US17211757

申请日：2021-03-24

Applicant: Intel Corporation

Inventor： Abhijit Jayant Pethe ,  Tahir Ghani ,  Mark Bohr ,  Clair Webb ,  Harry Gomez ,  Annalisa Cappellani

IPC: H01L21/768 ,  H01L21/28 ,  H01L21/311 ,  H01L23/522 ,  H01L23/532 ,  H01L29/66 ,  H01L29/78

Abstract: Gate contact structures disposed over active portions of gates and methods of forming such gate contact structures are described. For example, a semiconductor structure includes a substrate having an active region and an isolation region. A gate structure has a portion disposed above the active region and a portion disposed above the isolation region of the substrate. Source and drain regions are disposed in the active region of the substrate, on either side of the portion of the gate structure disposed above the active region. A gate contact structure is disposed on the portion of the gate structure disposed above the active region of the substrate.