BACK REFLECTION CIRCULATOR IN SILICON PHOTONIC CHIP METHODS AND APPARATUS

    公开(公告)号:US20190049985A1

    公开(公告)日:2019-02-14

    申请号:US16145747

    申请日:2018-09-28

    申请人: Intel Corporation

    摘要: Apparatuses and methods associated with silicon photonic chips, are disclosed herein. In some embodiments, a quarter wave plate (QWP) is provided to a silicon photonic chip to convert a first linearly polarized mode (e.g., TE mode) optical beam from a laser disposed on the silicon photonic chip, into a combination of orthogonal polarization modes optical beam, and to convert or contribute in converting a reflection of the combined polarized modes optical beam into a second linearly polarized mode (e.g., TM) optical beam with polarization orthogonal to the first. The optical beam is rotated relative to an axis of the QWP, or the QWP and its axis are rotated relative to a polarization axis of the optical beam. Other embodiments are also described and claimed.

    HIGH-EFFICIENCY SEMICONDUCTOR LASER
    3.
    发明申请

    公开(公告)号:US20180183211A1

    公开(公告)日:2018-06-28

    申请号:US15392875

    申请日:2016-12-28

    申请人: INTEL CORPORATION

    摘要: Embodiments of the present disclosure may relate to a hybrid silicon distributed feed-back (DFB) laser, wherein light is to propagate through the DFB laser along a length of the DFB laser. The DFB laser may include a mesa with a current channel that extends from the first side of the mesa to the second side of the mesa. At a first location along the length of the DFB laser, the current channel may have a first width and/or the mesa may have a second width. At a second location along the length of the DFB laser, the current channel may have a third width and/or the mesa may have a fourth width as measured in a direction perpendicular to the length of the DFB laser. Other embodiments may be described and/or claimed.

    OPTICAL HIGHER-ORDER MODE FRUSTRATION IN A RIB WAVEGUIDE
    4.
    发明申请
    OPTICAL HIGHER-ORDER MODE FRUSTRATION IN A RIB WAVEGUIDE 审中-公开
    RIB波形中的光学高阶模式图

    公开(公告)号:US20160282558A1

    公开(公告)日:2016-09-29

    申请号:US14670414

    申请日:2015-03-27

    申请人: Intel Corporation

    摘要: A slab of a rib waveguide includes geometric disruption features along a direction of propagation of the waveguide. The geometric disruption features scatter optical modes other than the fundamental mode in the slab without significantly impacting the fundamental optical mode that propagates primarily in the rib waveguide. The rib waveguide has a width to constrain the fundamental mode, and the fundamental mode primarily propagates through the rib waveguide, with some of the energy propagated via the slab. When the slab includes edges that are wider than the rib waveguide and smaller than the substrate on which the rib waveguide and slab are integrated, the slab can propagate optical modes other than the fundamental mode, such as higher-order modes. The geometric disruptions scatter the non-fundamental optical modes from the slab. The geometric disruptions can include serration features in one or both edges of the slab.

    摘要翻译: 肋条波导的平板包括沿着波导的传播方向的几何中断特征。 几何破坏特征散射平板以外的基本模式的光学模式,而不会显着影响主要在肋波导中传播的基本光学模式。 肋波导具有约束基模的宽度,并且基本模式主要通过肋波导传播,其中一些能量通过板传播。 当板坯包括比肋波导更宽的边缘并且小于肋波导和板块集成在其上的基板时,板坯可以传播除基本模式之外的光学模式,例如高阶模式。 几何破坏从平板散射非基本光学模式。 几何破坏可以包括板的一个或两个边缘的锯齿特征。

    Wide-angle, aliasing-free beam steering using aperiodic emitter arrays

    公开(公告)号:US10203452B2

    公开(公告)日:2019-02-12

    申请号:US15395874

    申请日:2016-12-30

    申请人: Intel Corporation

    摘要: A transmission circuit includes an array of subarrays of emitters with quasi-periodic spacing. A first subarray of emitters emits a source signal, and a second subarray of emitters emits the source signal. The first and second subarrays are separated by a subarray spacing that quasi-periodic, wherein the spacing between different subarrays is different. The quasi-periodic subarray spacing is to cause constructive interference of a main lobe of the emissions from the subarrays, and to cause non-constructive interference of sidelobes of the emissions. The spacing between emitters in the subarrays can vary from one subarray to another.

    Laser device with a stepped graded index separate confinement heterostructure

    公开(公告)号:US10833481B2

    公开(公告)日:2020-11-10

    申请号:US16235684

    申请日:2018-12-28

    申请人: Intel Corporation

    摘要: Embodiments of the present disclosure are directed towards a laser device with a stepped graded index separate confinement heterostructure (SCH), in accordance with some embodiments. One embodiment includes a substrate area, and an active region adjacent to the substrate area. The active region includes an SCH layer, which comprises a first portion and a second portion adjacent to the first portion. A composition of the first portion is graded to provide a first conduction band energy increase over a distance from multiple quantum wells (MQW) to a p-side of a laser device junction. A composition of the second portion is graded to provide a second conduction band energy increase over the MQW to the p-side distance. The first conduction band energy increase is different than the second conduction band energy increase. Other embodiments may be described and/or claimed.