公开(公告)号：US20170207185A1

公开(公告)日：2017-07-20

申请号：US15475793

申请日：2017-03-31

Applicant: INTEL CORPORATION

Inventor： CHARLES H. WALLACE ,  HOSSAM A. ABDALLAH ,  ELLIOT N. TAN ,  SWAMINATHAN SIVAKUMAR ,  OLEG GOLONZKA ,  ROBERT M. BIGWOOD

IPC: H01L23/00 ,  H01L21/306 ,  G03F7/16 ,  H01L21/308 ,  G03F7/00 ,  G03F7/40

Abstract: Techniques are disclosed for realizing a two-dimensional target lithography feature/pattern by decomposing (splitting) it into multiple unidirectional target features that, when aggregated, substantially (e.g., fully) represent the original target feature without leaving an unrepresented remainder (e.g., a whole-number quantity of unidirectional target features). The unidirectional target features may be arbitrarily grouped such that, within a grouping, all unidirectional target features share a common target width value. Where multiple such groupings are provided, individual groupings may or may not have the same common target width value. In some cases, a series of reticles is provided, each reticle having a mask pattern correlating to a grouping of unidirectional target features. Exposure of a photoresist material via the aggregated series of reticles substantially (e.g., fully) produces the original target feature/pattern. The pattern decomposition techniques may be integrated into any number of patterning processes, such as litho-freeze-litho-etch and litho-etch-litho-etch patterning processes.

公开(公告)号：US20170139318A1

公开(公告)日：2017-05-18

申请号：US15419147

申请日：2017-01-30

Applicant: INTEL CORPORATION

Inventor： CHARLES H. WALLACE ,  HOSSAM M. ABDALLAH ,  ELLIOT N. TAN ,  SWAMINATHAN SIVAKUMAR ,  OLEG GOLONZKA ,  ROBERT M. BIGWOOD

IPC: G03F1/36 ,  G03F7/20 ,  G03F1/50 ,  H01L21/027 ,  H01L21/308

CPC classification number: H01L24/09 ,  G03F1/50 ,  G03F1/70 ,  G03F7/0035 ,  G03F7/16 ,  G03F7/40 ,  G03F7/70741 ,  H01L21/02345 ,  H01L21/0273 ,  H01L21/2633 ,  H01L21/30604 ,  H01L21/3086 ,  H01L27/0207 ,  H01L2224/0801 ,  H01L2224/08053 ,  H01L2224/0912 ,  H01L2924/14

Abstract: Techniques are disclosed for realizing a two-dimensional target lithography feature/pattern by decomposing (splitting) it into multiple unidirectional target features that, when aggregated, substantially (e.g., fully) represent the original target feature without leaving an unrepresented remainder (e.g., a whole-number quantity of unidirectional target features). The unidirectional target features may be arbitrarily grouped such that, within a grouping, all unidirectional target features share a common target width value. Where multiple such groupings are provided, individual groupings may or may not have the same common target width value. In some cases, a series of reticles is provided, each reticle having a mask pattern correlating to a grouping of unidirectional target features. Exposure of a photoresist material via the aggregated series of reticles substantially (e.g., fully) produces the original target feature/pattern. The pattern decomposition techniques may be integrated into any number of patterning processes, such as litho-freeze-litho-etch and litho-etch-litho-etch patterning processes.

公开(公告)号：US20200091101A1

公开(公告)日：2020-03-19

申请号：US16692589

申请日：2019-11-22

Applicant: INTEL CORPORATION

Inventor： CHARLES H. WALLACE ,  HOSSAM A. ABDALLAH ,  ELLIOT N. TAN ,  SWAMINATHAN SIVAKUMAR ,  OLEG GOLONZKA ,  ROBERT M. BIGWOOD

IPC: H01L23/00 ,  G03F1/36 ,  H01L21/027 ,  G03F1/70 ,  G03F7/00 ,  G03F7/40 ,  G03F7/20 ,  H01L21/02 ,  H01L21/263 ,  H01L27/02 ,  G03F1/50 ,  G03F7/16 ,  H01L21/306 ,  H01L21/308

Abstract: Techniques are disclosed for realizing a two-dimensional target lithography feature/pattern by decomposing (splitting) it into multiple unidirectional target features that, when aggregated, substantially (e.g., fully) represent the original target feature without leaving an unrepresented remainder (e.g., a whole-number quantity of unidirectional target features). The unidirectional target features may be arbitrarily grouped such that, within a grouping, all unidirectional target features share a common target width value. Where multiple such groupings are provided, individual groupings may or may not have the same common target width value. In some cases, a series of reticles is provided, each reticle having a mask pattern correlating to a grouping of unidirectional target features. Exposure of a photoresist material via the aggregated series of reticles substantially (e.g., fully) produces the original target feature/pattern. The pattern decomposition techniques may be integrated into any number of patterning processes, such as litho-freeze-litho-etch and litho-etch-litho-etch patterning processes.