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公开(公告)号：US11205754B2
公开(公告)日：2021-12-21
申请号：US16264794
申请日：2019-02-01
IPC分类号： H01L51/00 , H01L51/05 , C01B32/158
摘要： A method of fabricating a carbon nanotube based device, including forming a trench having a bottom surface and sidewalls on a substrate, selectively depositing a bi-functional compound having two reactive moieties in the trench, wherein a first of the two reactive moieties selectively binds to the bottom surface, converting a second of the two reactive moieties to a diazonium salt; and reacting the diazonium salt with a dispersion of carbon nanotubes to form a carbon nanotube layer bound to the bottom surface of the trench.
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公开(公告)号：US10761089B2
公开(公告)日：2020-09-01
申请号：US16030122
申请日：2018-07-09
IPC分类号： G01N33/00 , G01N33/543 , B01J19/00 , B82Y40/00
摘要： Techniques for selective placement of carbon nanotubes using bifunctional acid monolayers are provided. In one aspect, a method for selective placement of carbon nanotubes on a metal oxide surface includes the steps of: dispersing poly-fluorene polymer-wrapped carbon nanotubes in an organic solvent; creating a patterned monolayer of a bifunctional acid on the metal oxide surface, wherein the bifunctional acid comprises a first acid functional group for binding to the metal oxide surface, and a second acid functional group for binding to the poly-fluorene polymer-wrapped carbon nanotubes; and contacting the poly-fluorene polymer-wrapped carbon nanotubes dispersed in the organic solvent with the patterned monolayer of the bifunctional acid on the metal oxide surface to selectively place the carbon nanotubes on the metal oxide surface via the patterned monolayer of the bifunctional acid. A carbon nanotube-based device and method of formation thereof are also provided.
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公开(公告)号：US10600965B2
公开(公告)日：2020-03-24
申请号：US15488762
申请日：2017-04-17
发明人： Shu-Jen Han , Bharat Kumar , George S. Tulevski
IPC分类号： C07C43/205 , C07C39/08 , H01L51/00 , C07F9/38 , C01B32/168 , H01L21/02 , C01B32/174 , C01B32/16
摘要： Structures and methods that include selective electrostatic placement based on a dipole-to-dipole interaction of electron-rich carbon nanotubes onto an electron-deficient pre-patterned surface. The structure includes a substrate with a first surface having a first isoelectric point and at least one additional surface having a second isoelectric point. A self-assembled monolayer is selectively formed on the first surface and includes an electron deficient compound including a deprotonated pendant hydroxamic acid or a pendant phosphonic acid group or a pendant catechol group bound to the first surface. An organic solvent can be used to deposit the electron rich carbon nanotubes on the self-assembled monolayer.
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公开(公告)号：US10559755B2
公开(公告)日：2020-02-11
申请号：US16266580
申请日：2019-02-04
发明人： Martin M. Frank , Shu-Jen Han , George S. Tulevski
摘要： A method of making a carbon nanotube structure includes depositing a first oxide layer on a substrate and a second oxide layer on the first oxide layer; etching a trench through the second oxide layer; removing end portions of the first oxide layer and portions of the substrate beneath the end portions to form cavities in the substrate; depositing a metal in the cavities to form first body metal pads; disposing a carbon nanotube on the first body metal pads and the first oxide layer such that ends of the carbon nanotube contact each of the first body metal layers; depositing a metal to form second body metal pads on the first body metal pads at the ends of the carbon nanotube; and etching to release the carbon nanotube, first body metal pads, and second body metal pads from the substrate, first oxide layer, and second oxide layer.
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公开(公告)号：US20190234800A1
公开(公告)日：2019-08-01
申请号：US16380042
申请日：2019-04-10
CPC分类号： G01J5/0018 , G01J5/023 , G01J5/046 , G01J5/0862 , G01J5/20 , G01J5/602 , G01J2005/0051 , G01J2005/0074 , G01J2005/0077
摘要： A computer-implemented method of forming a thermal-based electronic image of an object that includes receiving electromagnetic radiation emitted by the object at an optically sensitive layer including a superpixel having a plurality of pixels. Each pixel of the plurality of pixels includes a plasmonic absorber having a characteristic resonance wavelength and that generates a radiance measurement of the electromagnetic radiation at its characteristic resonance wavelength. The method further provides for determining, at a processor, an emissivity and temperature for the electromagnetic radiation received at the superpixel using the radiance measurements obtained at the pixels of the superpixel. In addition, the method provides for forming an image of the object from the determined emissivity and temperature.
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公开(公告)号：US10367146B2
公开(公告)日：2019-07-30
申请号：US15799216
申请日：2017-10-31
IPC分类号： H01L51/00 , H01L51/05 , C01B32/158
摘要： A method of fabricating a carbon nanotube based device, including forming a trench having a bottom surface and sidewalls on a substrate, selectively depositing a bi-functional compound having two reactive moieties in the trench, wherein a first of the two reactive moieties selectively binds to the bottom surface, converting a second of the two reactive moieties to a diazonium salt; and reacting the diazonium salt with a dispersion of carbon nanotubes to form a carbon nanotube layer bound to the bottom surface of the trench.
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公开(公告)号：US20190137392A1
公开(公告)日：2019-05-09
申请号：US16238890
申请日：2019-01-03
IPC分类号： G01N21/552
摘要： A method of forming a chemical sensor includes forming a dielectric layer on an electrode. A carbon nanotube film is deposited on the dielectric layer. The carbon nanotube film is patterned into strips.
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公开(公告)号：US10243143B2
公开(公告)日：2019-03-26
申请号：US15699527
申请日：2017-09-08
发明人： Martin M. Frank , Shu-Jen Han , George S. Tulevski
摘要： A method of making a carbon nanotube structure includes depositing a first oxide layer on a substrate and a second oxide layer on the first oxide layer; etching a trench through the second oxide layer; removing end portions of the first oxide layer and portions of the substrate beneath the end portions to form cavities in the substrate; depositing a metal in the cavities to form first body metal pads; disposing a carbon nanotube on the first body metal pads and the first oxide layer such that ends of the carbon nanotube contact each of the first body metal layers; depositing a metal to form second body metal pads on the first body metal pads at the ends of the carbon nanotube; and etching to release the carbon nanotube, first body metal pads, and second body metal pads from the substrate, first oxide layer, and second oxide layer.
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公开(公告)号：US20180019402A1
公开(公告)日：2018-01-18
申请号：US15718657
申请日：2017-09-28
CPC分类号： H01L51/0048 , C01B32/158 , H01L51/0007 , H01L51/0012 , H01L51/0049 , H01L51/0558 , H01L2251/303
摘要： A method of fabricating a carbon nanotube based device, including forming a trench having a bottom surface and sidewalls on a substrate, selectively depositing a bi-functional compound having two reactive moieties in the trench, wherein a first of the two reactive moieties selectively binds to the bottom surface, converting a second of the two reactive moieties to a diazonium salt; and reacting the diazonium salt with a dispersion of carbon nanotubes to form a carbon nanotube layer bound to the bottom surface of the trench.
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公开(公告)号：US09099542B2
公开(公告)日：2015-08-04
申请号：US13971342
申请日：2013-08-20
IPC分类号： H01L29/06 , H01L29/08 , H01L29/775 , H01L29/66 , B82Y10/00 , B82Y15/00 , B82Y40/00 , H01L51/00 , H01L51/05
CPC分类号： H01L29/775 , B82Y10/00 , B82Y15/00 , B82Y40/00 , H01L29/66045 , H01L51/0048 , H01L51/0554 , H01L51/0558
摘要： A carbon nanotube field-effect transistor is disclosed. The carbon nanotube field-effect transistor includes a first carbon nanotube film, a first gate layer coupled to the first carbon nanotube film and a second carbon nanotube film coupled to the first gate layer opposite the first gate layer. The first gate layer is configured to influence an electric field within the first carbon nanotube film as well as to influence an electric field of the second carbon nanotube film. At least one of a source contact and a drain contact are coupled to the first and second carbon nanotube film and are separated from the first gate layer by an underlap region.
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