公开(公告)号：US20150255337A1

公开(公告)日：2015-09-10

申请号：US14717387

申请日：2015-05-20

Applicant: International Business Machines Corporation

Inventor： QINGHUANG LIN ,  DIRK PFEIFFER

IPC: H01L21/768

CPC classification number: H01L21/76879 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/31144 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76819 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L23/5223 ,  H01L23/5227 ,  H01L23/5228 ,  H01L23/53238 ,  H01L23/53276 ,  H01L23/5329 ,  H01L28/90 ,  H01L45/06 ,  H01L45/1226 ,  H01L45/1683 ,  H01L2221/1094 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An electronic device includes an interlevel dielectric layer formed over a substrate and has a first set of openings and a second set of openings formed through the interlevel dielectric layer. The substrate includes conductive areas. A conductive contact structure is formed in the first set of openings in the interlevel dielectric layer to make electrical contact with the conductive areas of the substrate. A functional component is formed in the second set of openings in the interlevel dielectric layer and occupies a same level as the conductive contact structure.

Abstract translation: 电子器件包括形成在衬底上并具有第一组开口的层间电介质层和通过层间介电层形成的第二组开口。 基板包括导电区域。 导电接触结构形成在层间电介质层中的第一组开口中，以与衬底的导电区电接触。 功能部件形成在层间电介质层的第二组开口中，并且与导电接触结构相同。

公开(公告)号：US20200087700A1

公开(公告)日：2020-03-19

申请号：US16691737

申请日：2019-11-22

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： HARIKLIA DELIGIANNI ,  BRUCE B. DORIS ,  STEVEN J. HOLMES ,  QINGHUANG LIN ,  ROY R. YU

IPC: C12Q1/00 ,  G01N27/327 ,  G01N33/94

Abstract: Embodiments of the present invention are directed to a semiconductor device. A non-limiting example of the semiconductor device includes a semiconductor substrate. The semiconductor device also includes a plurality of metal nanopillars formed on the substrate. The semiconductor device also includes an amperometric sensor associated with one of the plurality of nanopillars, wherein the amperometric sensor is selective to an enzyme-active neurotransmitter. The semiconductor device also includes a resistivity sensor associated with a pair of nanopillars, wherein the resistivity sensor is selective to an analyte.

公开(公告)号：US20150280006A1

公开(公告)日：2015-10-01

申请号：US14741169

申请日：2015-06-16

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： QINGHUANG LIN ,  MINHUA LU ,  ROBERT L. WISNIEFF

IPC: H01L29/786

CPC classification number: H01L29/78633 ,  H01L21/283 ,  H01L23/532 ,  H01L23/5329 ,  H01L27/1292 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78618 ,  H01L29/7869 ,  H01L51/0004 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for fabricating a thin film transistor includes printing source, drain and channel regions on a passivated transparent substrate, forming a gate dielectric over the channel region and forming a gate conductor over the gate dielectric. A permanent antireflective coating is deposited over the source region, drain region and gate electrode, and an interlevel dielectric layer is formed over the permanent antireflective coating. Openings in the permanent antireflective coating and the interlevel dielectric layer are formed to provide contact holes to the source region, drain region and gate electrode. A conductor is deposited in the contact holes to electrically connect to the source region, drain region and gate electrode. Thin film transistor devices and other methods are also disclosed.

Abstract translation: 制造薄膜晶体管的方法包括在钝化的透明衬底上印刷源极，漏极和沟道区域，在沟道区域上形成栅极电介质，并在栅极电介质上形成栅极导体。 永久性抗反射涂层沉积在源极区域，漏极区域和栅极电极上，并且在永久抗反射涂层上形成层间电介质层。 形成永久性抗反射涂层和层间电介质层中的开口以提供与源极区，漏极区和栅电极的接触孔。 导体沉积在接触孔中以电连接到源极区，漏极区和栅电极。 还公开了薄膜晶体管器件和其它方法。

公开(公告)号：US20190048382A1

公开(公告)日：2019-02-14

申请号：US15671938

申请日：2017-08-08

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： HARIKLIA DELIGIANNI ,  BRUCE B. DORIS ,  STEVEN J. HOLMES ,  QINGHUANG LIN ,  ROY R. YU

IPC: C12Q1/00 ,  G01N33/94 ,  G01N27/327

Abstract: Embodiments of the present invention are directed to a semiconductor device. A non-limiting example of the semiconductor device includes a semiconductor substrate. The semiconductor device also includes a plurality of metal nanopillars formed on the substrate. The semiconductor device also includes an amperometric sensor associated with one of the plurality of nanopillars, wherein the amperometric sensor is selective to an enzyme-active neurotransmitter. The semiconductor device also includes a resistivity sensor associated with a pair of nanopillars, wherein the resistivity sensor is selective to an analyte.

公开(公告)号：US20150270219A1

公开(公告)日：2015-09-24

申请号：US14733652

申请日：2015-06-08

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： ROBERT L. BRUCE ,  QINGHUANG LIN ,  ALSHAKIM NELSON ,  SATYANARAYANA V. NITTA ,  DIRK PFEIFFER ,  JITENDRA S. RATHORE

IPC: H01L23/528 ,  H01L29/06 ,  H01L23/532

CPC classification number: H01L23/5283 ,  H01L21/76801 ,  H01L21/76804 ,  H01L21/76808 ,  H01L21/7682 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76832 ,  H01L21/76835 ,  H01L23/5222 ,  H01L23/5329 ,  H01L23/53295 ,  H01L29/0649 ,  H01L2221/1031 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An interconnect structure includes a patterned and cured dielectric layer located directly on a surface of a patterned permanent antireflective coating. The patterned and cured dielectric layer and the permanent antireflective coating form shaped openings. The shaped openings include an inverse profile which narrows towards a top of the shaped openings. A conductive structure fills the shaped openings wherein the patterned and cured dielectric layer and the permanent antireflective coating each have a conductively filled region.

Abstract translation: 互连结构包括直接位于图案化的永久抗反射涂层的表面上的图案化和固化的电介质层。 图案化和固化的介电层和永久性抗反射涂层形成成形的开口。 成形的开口包括朝向成形开口的顶部变窄的反向轮廓。 导电结构填充成形开口，其中图案化和固化的介电层和永久性抗反射涂层各自具有导电填充区域。

公开(公告)号：US20150318208A1

公开(公告)日：2015-11-05

申请号：US14754190

申请日：2015-06-29

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： QINGHUANG LIN ,  YING ZHANG

IPC: H01L21/768

CPC classification number: H01L21/76808 ,  H01L21/0272 ,  H01L21/0276 ,  H01L21/283 ,  H01L21/31058 ,  H01L21/311 ,  H01L21/76802 ,  H01L21/76805 ,  H01L21/76814 ,  H01L21/76816 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76877 ,  H01L21/76879 ,  H01L21/76895 ,  H01L21/76897 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A contact structure includes a permanent antireflection coating formed on a substrate having contact pads. A patterned dielectric layer is formed on the antireflective coating. The patterned dielectric layer and the permanent antireflective coating form openings. The openings correspond with locations of the contact pads. Contact structures are formed in the openings to make electrical contact with the contacts pads such that the patterned dielectric layer and the permanent antireflective coating each have a conductively filled region forming the contact structures.

Abstract translation: 接触结构包括在具有接触垫的基板上形成的永久性抗反射涂层。 在抗反射涂层上形成图案化的介电层。 图案化电介质层和永久性抗反射涂层形成开口。 开口对应于接触垫的位置。 在开口中形成接触结构以与接触垫电接触，使得图案化电介质层和永久性抗反射涂层各自具有形成接触结构的导电填充区域。