公开(公告)号：US09365947B2

公开(公告)日：2016-06-14

申请号：US14046443

申请日：2013-10-04

Applicant: Invensas Corporation

Inventor： Cyprian Emeka Uzoh ,  Sitaram Arkalgud

IPC: C25F3/14 ,  C25F3/12 ,  H05K1/02 ,  H05K1/11 ,  H01L23/498 ,  H01L21/48

CPC classification number: H01L25/0655 ,  C25F3/12 ,  C25F3/14 ,  H01L21/4857 ,  H01L21/486 ,  H01L21/6835 ,  H01L23/367 ,  H01L23/3733 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/49866 ,  H01L24/17 ,  H01L2221/68345 ,  H01L2221/68381 ,  H01L2224/16225 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/15311 ,  H01L2924/15701 ,  H01L2924/15724 ,  H01L2924/15738 ,  H01L2924/15747 ,  H01L2924/15763 ,  H05K1/0212 ,  H05K1/115 ,  H05K3/07 ,  H05K2201/10378

Abstract: A mask is formed over a first conductive portion of a conductive layer to expose a second conductive portion of the conductive layer. An electrolytic process is performed to remove conductive material from a first region and a second region of the second conductive portion. The second region is aligned with the mask relative to an electric field applied by the electrolytic process. The second region separates the first region of the second conductive portion from the first conductive portion. The electrolytic process is concentrated relative to the second region such that removal occurs at a relatively higher rate in the second region than in the first region.

Abstract translation: 在导电层的第一导电部分上形成掩模以暴露导电层的第二导电部分。 执行电解处理以从第二导电部分的第一区域和第二区域去除导电材料。 第二区域相对于通过电解过程施加的电场与掩模对准。 第二区域将第二导电部分的第一区域与第一导电部分分开。 电解过程相对于第二区域被浓缩，使得在第二区域中比在第一区域中以相对较高的速率进行去除。

公开(公告)号：US20150096790A1

公开(公告)日：2015-04-09

申请号：US14046443

申请日：2013-10-04

Applicant: INVENSAS CORPORATION

Inventor： Cyprian Emeka Uzoh ,  Sitaram Arkalgud

IPC: C25F3/12 ,  H05K1/11 ,  H05K1/02

CPC classification number: H01L25/0655 ,  C25F3/12 ,  C25F3/14 ,  H01L21/4857 ,  H01L21/486 ,  H01L21/6835 ,  H01L23/367 ,  H01L23/3733 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/49866 ,  H01L24/17 ,  H01L2221/68345 ,  H01L2221/68381 ,  H01L2224/16225 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/15311 ,  H01L2924/15701 ,  H01L2924/15724 ,  H01L2924/15738 ,  H01L2924/15747 ,  H01L2924/15763 ,  H05K1/0212 ,  H05K1/115 ,  H05K3/07 ,  H05K2201/10378

Abstract: A mask is formed over a first conductive portion of a conductive layer to expose a second conductive portion of the conductive layer. An electrolytic process is performed to remove conductive material from a first region and a second region of the second conductive portion. The second region is aligned with the mask relative to an electric field applied by the electrolytic process. The second region separates the first region of the second conductive portion from the first conductive portion. The electrolytic process is concentrated relative to the second region such that removal occurs at a relatively higher rate in the second region than in the first region.

Abstract translation: 在导电层的第一导电部分上形成掩模以暴露导电层的第二导电部分。 执行电解处理以从第二导电部分的第一区域和第二区域去除导电材料。 第二区域相对于通过电解过程施加的电场与掩模对准。 第二区域将第二导电部分的第一区域与第一导电部分分开。 电解过程相对于第二区域被浓缩，使得在第二区域中比在第一区域中以相对较高的速率进行去除。