LASER SYSTEM AND METHOD FOR PROCESSING SAPPHIRE
    1.
    发明申请
    LASER SYSTEM AND METHOD FOR PROCESSING SAPPHIRE 审中-公开
    激光系统和处理SAPPHIR的方法

    公开(公告)号:US20160001398A1

    公开(公告)日:2016-01-07

    申请号:US14770565

    申请日:2014-02-28

    摘要: Laser processing of sapphire is performed using a continuous wave laser operating in a quasi-continuous wave (QCW) mode to emit consecutive laser light pulses in a wavelength range of about 1060 nm to 1070 nm (hereinafter “QCW laser”). Laser processing of sapphire using a QCW laser may be performed with a lower duty cycle (e.g., between about 1% and 10%) and in an inert gas atmosphere such as argon or helium. Laser processing of sapphire using a QCW laser may further include the use of an assist laser having a shorter wavelength and/or pulse duration to modify a property of the sapphire substrate to form absorption centers, which facilitate coupling of the laser light pulses of the QCW laser into the sapphire.

    摘要翻译: 使用以准连续波(QCW)模式工作的连续波激光器进行蓝宝石的激光处理,以发射在约1060nm至1070nm的波长范围内的连续激光脉冲(以下称为“QCW激光”)。 使用QCW激光器的蓝宝石的激光加工可以以较低的占空比(例如,约1%至10%之间)和惰性气体气氛如氩或氦进行。 使用QCW激光器的蓝宝石的激光处理还可以包括使用具有较短波长和/或脉冲持续时间的辅助激光器来改变蓝宝石衬底的性质以形成吸收中心,这有助于QCW的激光脉冲的耦合 激光入蓝宝石。

    MULTI-LASER SYSTEM AND METHOD FOR CUTTING AND POST-CUT PROCESSING HARD DIELECTRIC MATERIALS
    3.
    发明申请
    MULTI-LASER SYSTEM AND METHOD FOR CUTTING AND POST-CUT PROCESSING HARD DIELECTRIC MATERIALS 有权
    用于切割和切割加工硬质电介质材料的多激光系统和方法

    公开(公告)号:US20160059349A1

    公开(公告)日:2016-03-03

    申请号:US14838809

    申请日:2015-08-28

    摘要: Laser processing of hard dielectric materials may include cutting a part from a hard dielectric material using a continuous wave laser operating in a quasi-continuous wave (QCW) mode to emit consecutive laser light pulses in a wavelength range of about 1060 nm to 1070 nm. Cutting using a QCW laser may be performed with a lower duty cycle (e.g., between about 1% and 15%) and in an inert gas atmosphere such as nitrogen, argon or helium. Laser processing of hard dielectric materials may further include post-cut processing the cut edges of the part cut from the dielectric material, for example, by beveling and/or polishing the edges to reduce edge defects. The post-cut processing may be performed using a laser beam with different laser parameters than the beam used for cutting, for example, by using a shorter wavelength (e.g., 193 nm excimer laser) and/or a shorter pulse width (e.g., picosecond laser).

    摘要翻译: 硬介电材料的激光加工可以包括使用以准连续波(QCW)模式工作的连续波激光从硬电介质材料切割一部分,以发射约1060nm至1070nm波长范围的连续激光脉冲。 使用QCW激光器的切割可以以较低的占空比(例如,约1%至15%之间)和惰性气体气氛如氮气,氩气或氦气进行。 硬介电材料的激光加工还可以包括对从电介质材料切割的部分的切割边缘进行后切割处理,例如通过斜边和/或抛光边缘以减少边缘缺陷。 后切割处理可以使用具有比用于切割的光束不同的激光参数的激光束,例如通过使用较短波长(例如,193nm准分子激光)和/或较短的脉冲宽度(例如,皮秒 激光)。

    SYSTEM AND METHOD FOR LASER BEVELING AND/OR POLISHING
    5.
    发明申请
    SYSTEM AND METHOD FOR LASER BEVELING AND/OR POLISHING 审中-公开
    用于激光水平和/或抛光的系统和方法

    公开(公告)号:US20160059354A1

    公开(公告)日:2016-03-03

    申请号:US14838837

    申请日:2015-08-28

    摘要: Laser processing of hard dielectric materials may include cutting a part from a hard dielectric material using a continuous wave laser operating in a quasi-continuous wave (QCW) mode to emit consecutive laser light pulses in a wavelength range of about 1060 nm to 1070 nm. Cutting using a QCW laser may be performed with a lower duty cycle (e.g., between about 1% and 15%) and in an inert gas atmosphere such as nitrogen, argon or helium. Laser processing of hard dielectric materials may further include post-cut processing the cut edges of the part cut from the dielectric material, for example, by beveling and/or polishing the edges to reduce edge defects. The post-cut processing may be performed using a laser beam with different laser parameters than the beam used for cutting, for example, by using a shorter wavelength (e.g., 193 nm excimer laser) and/or a shorter pulse width (e.g., picosecond laser).

    摘要翻译: 硬介电材料的激光加工可以包括使用以准连续波(QCW)模式工作的连续波激光从硬电介质材料切割一部分,以发射约1060nm至1070nm波长范围的连续激光脉冲。 使用QCW激光器的切割可以以较低的占空比(例如,约1%至15%之间)和惰性气体气氛如氮气,氩气或氦气进行。 硬介电材料的激光加工还可以包括对从电介质材料切割的部分的切割边缘进行后切割处理,例如通过斜边和/或抛光边缘以减少边缘缺陷。 后切割处理可以使用具有比用于切割的光束不同的激光参数的激光束,例如通过使用较短波长(例如,193nm准分子激光)和/或较短的脉冲宽度(例如,皮秒 激光)。