公开(公告)号：US20060284252A1

公开(公告)日：2006-12-21

申请号：US11214590

申请日：2005-08-29

申请人： Alice Boussagol ,  Ian Cayrefourcq

发明人： Alice Boussagol ,  Ian Cayrefourcq

IPC分类号： H01L27/12

CPC分类号： H01L21/02532 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/84 ,  H01L29/7842 ,  H01L29/7843

摘要： The invention relates to structures useful for the manufacture of electronic components, which comprise a substrate, a strain holding layer, and a layer of a strained semiconducting material. These structures are particularly useful where islands are later formed in the strained semiconducting material because the strain holding layer limits relaxation of stress in the islands. This invention also relates to processes for making a these structures.

摘要翻译： 本发明涉及可用于制造电子部件的结构，其包括基底，应变保持层和应变半导体材料层。 由于应变保持层限制岛中的应力松弛，因此在应变半导体材料中稍后形成岛状时，这些结构特别有用。 本发明还涉及制造这些结构的方法。

公开(公告)号：US09011598B2

公开(公告)日：2015-04-21

申请号：US11541192

申请日：2006-09-28

申请人： Alice Boussagol ,  Frédéric Dupont ,  Bruce Faure

发明人： Alice Boussagol ,  Frédéric Dupont ,  Bruce Faure

IPC分类号： C30B33/06 ,  C30B29/38 ,  H01L21/762

CPC分类号： H01L21/76254 ,  Y10S117/915

摘要： The present invention provides methods for fabricating a composite substrate including a supporting substrate and a layer of a binary or ternary material having a crystal form that is non-cubic and semi-polar or non-polar. The methods comprise transferring the layer of a binary or ternary material from a donor substrate to a receiving substrate.

摘要翻译： 本发明提供了制造复合衬底的方法，所述复合衬底包括支撑衬底和具有非立方和半极性或非极性的晶体形式的二元或三元材料层。 所述方法包括将二元或三元材料的层从施主衬底转移到接收衬底。

公开(公告)号：US07839001B2

公开(公告)日：2010-11-23

申请号：US12536082

申请日：2009-08-05

申请人： Alice Boussagol ,  Bruce Faure ,  Bruno Ghyselen ,  Fabrice Letertre ,  Olivier Rayssac ,  Pierre Rayssac, legal representative ,  Giséle Rayssac, legal representative

发明人： Alice Boussagol ,  Bruce Faure ,  Bruno Ghyselen ,  Fabrice Letertre ,  Olivier Rayssac

IPC分类号： H01L23/52 ,  H01L23/48 ,  H01L21/762 ,  H01L21/46 ,  H01L21/30

CPC分类号： H01L21/76254 ,  C30B25/18 ,  C30B33/00 ,  H01L21/2007

摘要： A method for making substrates for use in optics, electronics, or opto-electronics. The method may include transferring a seed layer onto a receiving support and depositing a useful layer onto the seed layer. The thermal expansion coefficient of the receiving support may be identical to or slightly larger than the thermal expansion coefficient of the useful layer and the thermal expansion coefficient of the seed layer may be substantially equal to the thermal expansion coefficient of the receiving support. Preferably, the nucleation layer and the intermediate support have substantially the same chemical composition.

摘要翻译： 一种用于制造用于光学，电子或光电子的基板的方法。 该方法可以包括将种子层转移到接收支撑体上并将有用的层沉积到种子层上。 接收支撑件的热膨胀系数可以与有用层的热膨胀系数相同或略大，并且种子层的热膨胀系数可以基本上等于接收支撑件的热膨胀系数。 优选地，成核层和中间载体具有基本上相同的化学组成。

公开(公告)号：US07326628B2

公开(公告)日：2008-02-05

申请号：US11181405

申请日：2005-07-13

申请人： Nadia Ben Mohamed ,  Nguyet-Phuong Nguyen ,  Takeshi Akatsu ,  Alice Boussagol ,  Gabriela Suciu

发明人： Nadia Ben Mohamed ,  Nguyet-Phuong Nguyen ,  Takeshi Akatsu ,  Alice Boussagol ,  Gabriela Suciu

IPC分类号： H01L21/30

CPC分类号： H01L21/76254 ,  H01L21/26506

摘要： A method for producing a semiconductor structure by conducting controlled co-implanting of at least first and second different atomic species into a donor substrate to create an embrittlement zone which defines a thin layer of donor material to be transferred. Implantation energies are selected so that the first and second species are respectively distributed in the donor wafer according to a repartition profile that presents a spreading zone in which each species is mainly distributed at a maximum concentration peak. The implantation doses and energies of the first and second species are selected such that the second species is implanted deeper in the embrittlement zone than the first species spreading zone. The donor substrate is detached at the embrittlement zone to transfer the thin layer to the support substrate while minimizing blister formation in and surface roughness of the transferred layer. Preferably, the implantation dose of the first species is between about 40 to 60 percent of all implantation doses. This method is preferably utilized for forming or producing SeOI (Semiconductor On Insulator) structures.

摘要翻译： 一种用于通过将至少第一和第二不同原子物质的受控共同植入进入施主衬底以产生限定待转移的施主材料的薄层的脆化区来制造半导体结构的方法。 选择植入能量，使得第一和第二物质分别分布在施主晶片中，根据重新分布分布，其呈现扩散区，其中每个物质主要以最大浓度峰分布。 选择第一种和第二种的植入剂量和能量，使得第二种类在脆化区中比第一物种扩散区更深地植入。 在脆化区分离施主衬底以将薄层转移到支撑衬底，同时最小化转移层的起泡和表面粗糙度。 优选地，第一种类的植入剂量是所有植入剂量的约40至60％。 该方法优选用于形成或制造SeOI（半导体绝缘体）结构。

公开(公告)号：US07135383B2

公开(公告)日：2006-11-14

申请号：US11020040

申请日：2004-12-21

申请人： Bruce Faure ,  Alice Boussagol

发明人： Bruce Faure ,  Alice Boussagol

IPC分类号： H01L21/30

CPC分类号： H01L21/76254

摘要： A composite structure is disclosed that includes a support wafer and a layered structure on the support wafer. The layered structure includes at least one layer of a monocrystalline material and at least one layer of a dielectric material. In addition, the layered structure materials and the thickness of each layer are chosen such that the thermal impedance between ambient temperature and 600° K of the composite structure is a value that is no greater than about 1.3 times the thermal impedance of a monocrystalline bulk SiC wafer having the same dimensions as the composite structure. The composite structure provides sufficient heat dissipation properties for manufacturing optical, electronic, or optoelectronic components.

摘要翻译： 公开了一种复合结构，其包括支撑晶片和支撑晶片上的分层结构。 层状结构包括至少一层单晶材料和至少一层电介质材料。 此外，选择层状结构材料和每层的厚度使得复合结构的环境温度和600°K之间的热阻抗是不大于单晶体块状SiC的热阻抗的约1.3倍的值 晶片具有与复合结构相同的尺寸。 复合结构为制造光学，电子或光电子元件提供了足够的散热特性。

公开(公告)号：US08679942B2

公开(公告)日：2014-03-25

申请号：US12610065

申请日：2009-10-30

申请人： Fabrice Letertre ,  Jean-Marc Bethoux ,  Alice Boussagol

发明人： Fabrice Letertre ,  Jean-Marc Bethoux ,  Alice Boussagol

IPC分类号： H01L29/20

CPC分类号： H01L21/0242 ,  H01L21/02458 ,  H01L21/02472 ,  H01L21/0254 ,  H01L21/76254

摘要： Composite substrates are produced that include a strained III-nitride material seed layer on a support substrate. Methods of producing the composite substrate include developing a desired lattice strain in the III-nitride material to produce a lattice parameter substantially matching a lattice parameter of a device structure to be formed on the composite substrate. The III-nitride material may be formed with a Ga polarity or an N polarity. The desired lattice strain may be developed by forming a buffer layer between the III-nitride material and a growth substrate, implanting a dopant in the III-nitride material to modify its lattice parameter, or forming the III-nitride material with a coefficient of thermal expansion (CTE) on a growth substrate with a different CTE.

摘要翻译： 生产复合衬底，其包括在支撑衬底上的应变III族氮化物材料种子层。 制造复合衬底的方法包括在III族氮化物材料中开发所需的晶格应变，以产生基本上与要在复合衬底上形成的器件结构的晶格参数匹配的晶格参数。 III族氮化物材料可以形成为Ga极性或N极性。 可以通过在III族氮化物材料和生长衬底之间形成缓冲层来形成所需的晶格应变，在III族氮化物材料中注入掺杂剂以改变其晶格参数，或者用热系数形成III族氮化物材料 在具有不同CTE的生长衬底上的膨胀（CTE）。

公开(公告)号：US07557324B2

公开(公告)日：2009-07-07

申请号：US10605256

申请日：2003-09-18

申请人： Per Nylen ,  Alice Boussagol ,  Roger Svensson ,  Gabriel Mora ,  Mats-Olov Hansson ,  Jan Wigren ,  Jimmy Johansson

发明人： Per Nylen ,  Alice Boussagol ,  Roger Svensson ,  Gabriel Mora ,  Mats-Olov Hansson ,  Jan Wigren ,  Jimmy Johansson

IPC分类号： B23K10/00

CPC分类号： H05H1/42 ,  B05B7/205 ,  C23C4/129

摘要： A thermal spraying method and device that includes a device (1,2) which generates a flame and a device (3) which injects a powder into the flame. The flame-generating device (1,2) includes an end piece (1) out of which the flame is directed towards a substrate subjected to spraying. The powder-injection device (3) includes a frame element (6) that is adapted to be attached to the end piece (1) and to project in the flame ejection direction from the end piece (1). The frame element (6) has a plurality of through-holes (9) extending through it and distributed circumferentially about the frame element (6) as well as at least two powder injection ports distributed about the frame element (6).

摘要翻译： 一种热喷涂方法和装置，其包括产生火焰的装置（1,2）和将粉末注入火焰中的装置（3）。 火焰发生装置（1,2）包括端部件（1），其中火焰被引向经受喷涂的基板。 粉末注射装置（3）包括适于附接到端件（1）并从端件（1）沿火焰喷射方向突出的框架元件（6）。 框架元件（6）具有多个通过其延伸并且围绕框架元件（6）周向分布的通孔（9）以及分布在框架元件（6）周围的至少两个粉末注入端口。

公开(公告)号：US20070287273A1

公开(公告)日：2007-12-13

申请号：US11840696

申请日：2007-08-17

申请人： Alice Boussagol ,  Bruce Faure ,  Bruno Ghyselen ,  Fabrice Letertre ,  Olivier Rayssac ,  Pierre Rayssac ,  Gisele Rayssac

发明人： Alice Boussagol ,  Bruce Faure ,  Bruno Ghyselen ,  Fabrice Letertre ,  Olivier Rayssac ,  Pierre Rayssac ,  Gisele Rayssac

IPC分类号： H01L21/20

CPC分类号： H01L21/76254 ,  C30B25/18 ,  C30B33/00 ,  H01L21/2007

摘要： A method for making substrates for use in optics, electronics, or opto-electronics. The method may include transferring a seed layer onto a receiving support and depositing a useful layer onto the seed layer. The thermal expansion coefficient of the receiving support may be identical to or slightly larger than the thermal expansion coefficient of the useful layer and the thermal expansion coefficient of the seed layer may be substantially equal to the thermal expansion coefficient of the receiving support. Preferably, the nucleation layer and the intermediate support have substantially the same chemical composition.

摘要翻译： 一种用于制造用于光学，电子或光电子的基板的方法。 该方法可以包括将种子层转移到接收支撑体上并将有用的层沉积到种子层上。 接收支撑件的热膨胀系数可以与有用层的热膨胀系数相同或略大，并且种子层的热膨胀系数可以基本上等于接收支撑件的热膨胀系数。 优选地，成核层和中间载体具有基本上相同的化学组成。

公开(公告)号：US20070148910A1

公开(公告)日：2007-06-28

申请号：US11356926

申请日：2006-02-16

申请人： Eric Neyret ,  Alice Boussagol ,  Nadia Ben Mohamed

发明人： Eric Neyret ,  Alice Boussagol ,  Nadia Ben Mohamed

IPC分类号： H01L21/46 ,  H01L29/02

CPC分类号： H01L21/76254

摘要： The invention relates to a process for the formation of a structure comprising a thin layer made of semiconductor material on a substrate, including the steps of providing a zone of weakness in a donor substrate; bonding the donor substrate to a support substrate; detaching a portion of the donor substrate to transfer it to the support substrate, wherein the detaching includes applying heat treating the donor substrate to weaken the zone of weakness without initiating detachment and applying an energy pulse to provoke self-maintained detachment of the donor substrate portion to transfer it to the support substrate; and subjecting the transferred portion of the donor substrate to a finishing operation to form a thin layer. The finishing operation is simplified compared to that which is conducted by a conventional process that achieves detaching by applying a heat treatment to provoke self-maintained detachment of the donor substrate portion, and the thin layer has a surface of the same smoothness as one prepared by the conventional process.

摘要翻译： 本发明涉及一种用于形成包括由衬底上的半导体材料制成的薄层的结构的方法，包括以下步骤：在施主衬底中提供弱化区; 将施主衬底粘合到支撑衬底上; 分离供体基质的一部分以将其转移到支撑基底，其中分离包括施加热处理供体基底以弱化弱化区而不引发脱离并施加能量脉冲以引发供体基底部分的自维持脱离 将其转移到支撑基板上; 并且对被转移的供体基底进行精加工操作以形成薄层。 与通过施加热处理以实现供体基板部分的自我维持的分离而实现分离的常规方法进行的精加工操作相比，该薄层具有与由 常规方法。

公开(公告)号：US06858517B2

公开(公告)日：2005-02-22

申请号：US10839131

申请日：2004-05-06

申请人： Muriel Martinez ,  Alice Boussagol

发明人： Muriel Martinez ,  Alice Boussagol

IPC分类号： H01L21/762 ,  H01L21/30 ,  H01L21/46

CPC分类号： H01L21/76254 ,  H01L21/76259

摘要： The present invention relates to a method for forming a heterogeneous assembly of first and second materials having different coefficients of thermal expansion. The method includes bonding a surface of a first substrate of a first material to a surface of a second substrate of a second material wherein the first substrate includes a zone of weakness therein to define a transfer layer adjacent the first surface, providing a stiffening substrate of a third material to maintain sufficient flatness and prevent breakage of the transfer layer during detachment from the first substrate, and detaching the transfer layer from the first substrate along the zone of weakness to form a heterogeneous assembly of the transfer layer and second substrate. The stiffening substrate is bonded to one of the first or second substrates and the third material has a coefficient of thermal expansion that is the same as or close to that of the material of the substrate to which the stiffening substrate is bonded to facilitate a successful detachment of the transfer layer from the first substrate.

摘要翻译： 本发明涉及一种用于形成具有不同热膨胀系数的第一和第二材料的非均匀组件的方法。 该方法包括将第一材料的第一衬底的表面结合到第二材料的第二衬底的表面，其中第一衬底包括其中的弱化区，以限定邻近第一表面的转移层，提供加强基底 第三材料，以在从第一基板分离期间保持足够的平整度并防止转印层的破坏，以及沿着弱化区域将转印层从第一基板分离，以形成转印层和第二基板的非均匀组件。 加强基板粘合到第一或第二基板中的一个，并且第三材料的热膨胀系数与加强基板结合的基板的材料的热膨胀系数相同或接近，以促进成功的分离 的转移层。