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    Selective silicidation process using a titanium nitride protective layer
    2.
    发明授权
    Selective silicidation process using a titanium nitride protective layer 失效
    使用氮化钛保护层的选择性硅化工艺

    公开(公告)号：US4920073A

    公开(公告)日：1990-04-24

    申请号：US350429

    申请日：1989-05-11

    申请人： Che-Chia Wei ,  Thomas E. Tang ,  James G. Bohlman ,  Monte A. Douglas

    发明人： Che-Chia Wei ,  Thomas E. Tang ,  James G. Bohlman ,  Monte A. Douglas

    IPC分类号： H01L21/3205 ,  H01L21/28 ,  H01L21/321 ,  H01L21/336 ,  H01L23/52

    CPC分类号： H01L29/665 ,  H01L21/3211 ,  Y10S148/113 ,  Y10S148/147

    摘要： The present invention provides a method for inhibiting the oxidation of a titanium layer during the direct reaction of the titanium with exposed silicon areas of an integrated circuit. In one embodiment of the present invention, a titanium nitride layer is formed on the surface of the titanium layer in the reactor where the titanium layer is deposited. The titanium nitride layer provides an effective barrier against oxidation. Thus, the formation of titanium dioxide is inhibited. In addition, in those areas where titanium nitride local interconnect is to be formed between diffused areas, the extra thickness provided by the top titanium nitride layer adds in the integrity of the conductive layers. By conducting the silicidation in a nitride atmosphere, diffusion of the nitride from the titanium nitride layer into the titanium layer and substitution of those lost nitrogen atoms by the atmosphere occurs thus providing a blocking layer for the formation of titanium silicide shorts.

    摘要翻译： 本发明提供了在钛与集成电路的暴露的硅区域的直接反应期间抑制钛层的氧化的方法。 在本发明的一个实施例中，在沉积钛层的反应器中的钛层的表面上形成氮化钛层。 氮化钛层提供了抗氧化的有效屏障。 因此，二氧化钛的形成被抑制。 此外，在要在扩散区域之间形成氮化钛局部互连的区域中，由顶部氮化钛层提供的额外的厚度增加了导电层的完整性。 通过在氮化物气氛中进行硅化，氮化物从钛氮化物层扩散到钛层中，并且由于大气中的那些失去的氮原子而被发生，从而提供用于形成硅化钛短路的阻挡层。

    Processing apparatus
    3.
    发明授权
    Processing apparatus 失效
    处理装置

    公开(公告)号：US4872938A

    公开(公告)日：1989-10-10

    申请号：US188128

    申请日：1988-04-25

    申请人： Cecil J. Davis ,  Joseph V. Abernathy ,  Robert T. Matthews ,  Randall C. Hildenbrand ,  Bruce Simpson ,  John I. Jones ,  Lee M. Loewenstein ,  James G. Bohlman

    发明人： Cecil J. Davis ,  Joseph V. Abernathy ,  Robert T. Matthews ,  Randall C. Hildenbrand ,  Bruce Simpson ,  John I. Jones ,  Lee M. Loewenstein ,  James G. Bohlman

    IPC分类号： H01L21/00 ,  H01L21/677

    CPC分类号： H01L21/67748 ,  H01L21/67115 ,  H01L21/67751 ,  H01L21/67796

    摘要： A process module which is compatible with a system using vacuum wafer transport in which wafers are generally transported and processed in a face down position under vacuum, and which also includes an additional wafer movement, wherein, after a wafer has been emplaced face down, in a position where it can be clamped against the susceptor, the susceptor is rotated from its approximately horizontal position up to a more nearly vertical position. In the more nearly vertical position, the wafer can be processed by a top process module, which may be, e.g., a sputter system, an implanter, or an inspection module. Another process module is included in the bottom part of the chamber, so that the wafer can be processed by the lower process module while in its substantially horizontal position and processed by the upper process module when it is in its more nearly vertical position. This is especially advantageous when the lower process module is a plasma cleanup module and the top module is a deposition module.

    摘要翻译： 一种与使用真空晶片传输的系统兼容的处理模块，其中晶片通常在真空下以正面朝下的位置运输和处理，并且还包括另外的晶片移动，其中在晶片已经朝下放置之后， 可以将其固定在基座上的位置，基座从其大致水平位置旋转到更接近垂直的位置。 在更接近垂直的位置，晶片可以由顶部工艺模块来处理，顶部工艺模块可以是例如溅射系统，注入机或检查模块。 另一个处理模块被包括在腔室的底部，使得晶片在处于其基本上水平的位置时可被下部处理模块处理，并且当其处于更接近垂直的位置时由上部处理模块处理。 当下部工艺模块是等离子体清理模块并且顶部模块是沉积模块时，这是特别有利的。