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    Method and system of improved reliability testing
    7.
    发明授权
    Method and system of improved reliability testing 有权
    改进可靠性测试方法和系统

    公开(公告)号：US08683420B2

    公开(公告)日：2014-03-25

    申请号：US12948257

    申请日：2010-11-17

    申请人： Yun Wang ,  Tony P. Chiang ,  Ryan Clarke ,  Chi-I Lang ,  Yoram Schwarz

    发明人： Yun Wang ,  Tony P. Chiang ,  Ryan Clarke ,  Chi-I Lang ,  Yoram Schwarz

    IPC分类号： G06F17/50

    CPC分类号： H01L22/14

    摘要： A method and system of improved reliability testing includes providing a first substrate and a second substrate, each substrate comprising only a first metallization layer; processing regions on a first substrate by combinatorially varying at least one of materials, unit processes, and process sequences; performing a first reliability test on the processed regions on the first substrate to generate first results; processing regions on a second substrate in a combinatorial manner by varying at least one of materials, unit processes, and process sequences based on the first results of the first reliability test; performing a second reliability test on the processed regions on the second substrate to generate second results; and determining whether the first substrate and the second substrate meet a predetermined quality threshold based on the second results.

    摘要翻译： 改进的可靠性测试的方法和系统包括提供第一衬底和第二衬底，每个衬底仅包括第一金属化层; 通过组合地改变材料，单元过程和工艺顺序中的至少一个来处理第一衬底上的处理区域; 对所述第一基板上的所述经处理区域进行第一可靠性测试以产生第一结果; 基于第一可靠性测试的第一结果，通过改变材料，单元过程和过程序列中的至少一个来以组合的方式处理第二基板上的区域; 对所述第二基板上的所述经处理区域进行第二可靠性测试以产生第二结果; 以及基于所述第二结果来确定所述第一基板和所述第二基板是否满足预定质量阈值。

    Method and System of Improved Reliability Testing
    8.
    发明申请
    Method and System of Improved Reliability Testing 有权
    改进可靠性测试方法与系统

    公开(公告)号：US20120119768A1

    公开(公告)日：2012-05-17

    申请号：US12948257

    申请日：2010-11-17

    申请人： Yun Wang ,  Tony P. Chiang ,  Ryan Clarke ,  Chi-I Lang ,  Yoram Schwarz

    发明人： Yun Wang ,  Tony P. Chiang ,  Ryan Clarke ,  Chi-I Lang ,  Yoram Schwarz

    IPC分类号： G01R31/3187 ,  H01L21/66

    CPC分类号： H01L22/14

    摘要： A method and system of improved reliability testing includes providing a first substrate and a second substrate, each substrate comprising only a first metallization layer; processing regions on a first substrate by combinatorially varying at least one of materials, unit processes, and process sequences; performing a first reliability test on the processed regions on the first substrate to generate first results; processing regions on a second substrate in a combinatorial manner by varying at least one of materials, unit processes, and process sequences based on the first results of the first reliability test; performing a second reliability test on the processed regions on the second substrate to generate second results; and determining whether the first substrate and the second substrate meet a predetermined quality threshold based on the second results.

    摘要翻译： 改进的可靠性测试的方法和系统包括提供第一衬底和第二衬底，每个衬底仅包括第一金属化层; 通过组合地改变材料，单元过程和工艺顺序中的至少一个来处理第一衬底上的处理区域; 对所述第一基板上的所述经处理区域进行第一可靠性测试以产生第一结果; 基于第一可靠性测试的第一结果，通过改变材料，单元过程和过程序列中的至少一个来以组合的方式处理第二基板上的区域; 对所述第二基板上的所述经处理区域进行第二可靠性测试以产生第二结果; 以及基于所述第二结果来确定所述第一基板和所述第二基板是否满足预定质量阈值。

    Embedded nonvolatile memory elements having resistive switching characteristics
    9.
    发明授权
    Embedded nonvolatile memory elements having resistive switching characteristics 有权
    具有电阻开关特性的嵌入式非易失性存储元件

    公开(公告)号：US09129894B2

    公开(公告)日：2015-09-08

    申请号：US13621371

    申请日：2012-09-17

    申请人： Imran Hashim ,  Tony Chiang ,  Vidyut Gopal ,  Yun Wang

    发明人： Imran Hashim ,  Tony Chiang ,  Vidyut Gopal ,  Yun Wang

    IPC分类号： G11C11/21 ,  H01L27/24 ,  G11C13/00 ,  H01L45/00

    CPC分类号： H01L45/1608 ,  G11C13/0007 ,  G11C13/0069 ,  G11C2213/32 ,  G11C2213/51 ,  G11C2213/52 ,  G11C2213/74 ,  G11C2213/79 ,  H01L27/2436 ,  H01L45/08 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146

    摘要： Provided are nonvolatile memory assemblies each including a resistive switching layer and current steering element. The steering element may be a transistor connected in series with the switching layer. Resistance control provided by the steering element allows using switching layers requiring low switching voltages and currents. Memory assemblies including such switching layers are easier to embed into integrated circuit chips having other low voltage components, such as logic and digital signal processing components, than, for example, flash memory requiring much higher switching voltages. In some embodiments, provided nonvolatile memory assemblies operate at switching voltages less than about 3.0V and corresponding currents less than 50 microamperes. A memory element may include a metal rich hafnium oxide disposed between a titanium nitride electrode and doped polysilicon electrode. One electrode may be connected to a drain or source of the transistor, while another electrode is connected to a signal line.

    摘要翻译： 提供了各自包括电阻式开关层和电流控制元件的非易失性存储器组件。 转向元件可以是与开关层串联连接的晶体管。 由转向元件提供的电阻控制允许使用需要低开关电压和电流的开关层。 包括这种开关层的存储器组件比例如需要高得多的开关电压的闪速存储器更容易嵌入到具有其它低电压组件（例如逻辑和数字信号处理组件）的集成电路芯片中。 在一些实施例中，所提供的非易失性存储器组件在小于约3.0V的开关电压和小于50微安的相应电流下工作。 存储元件可以包括设置在氮化钛电极和掺杂多晶硅电极之间的富含金属的氧化铪。 一个电极可以连接到晶体管的漏极或源极，而另一个电极连接到信号线。