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公开(公告)号：US20080051014A1
公开(公告)日：2008-02-28
申请号：US11762007
申请日：2007-06-12
CPC分类号： B24B37/12 , B24B37/345
摘要： A polishing apparatus for polishing semiconductor wafers comprises a main polishing structure, which includes a plurality of polishing tables, a plurality of polishing heads and a plurality of load-and-unload stations, and an add-on polishing structure, which includes an additional polishing table and an additional polishing head. The add-on polishing structure can be attached to the main polishing structure to form a larger polishing structure with the additional polishing table and the additional polishing head.
摘要翻译： 用于研磨半导体晶片的抛光装置包括主抛光结构，其包括多个抛光台，多个抛光头和多个装载和卸载台，以及附加抛光结构，其包括附加抛光 桌子和一个额外的抛光头。 附加抛光结构可以附加到主抛光结构以形成具有附加抛光台和附加抛光头的较大抛光结构。
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公开(公告)号：US20070207709A1
公开(公告)日：2007-09-06
申请号：US11680588
申请日：2007-02-28
IPC分类号： B24B7/30
CPC分类号： B24B37/30
摘要： A polishing head and method for handling and polishing semiconductor wafers uses a base structure with at least one recess region and an outer flexible membrane that can conform to the at least one recess region to form at least one depression to hold a semiconductor wafer onto the outer flexible membrane when suction is applied to the at least one depression.
摘要翻译： 用于处理和抛光半导体晶片的抛光头和方法使用具有至少一个凹陷区域和外部柔性膜的基底结构，所述至少一个凹陷区域和外部柔性膜可以符合至少一个凹部区域以形成至少一个凹陷部，以将半导体晶片保持在外部 当对至少一个凹陷施加抽吸时的柔性膜。
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公开(公告)号：US07775853B2
公开(公告)日：2010-08-17
申请号：US11762007
申请日：2007-06-12
CPC分类号： B24B37/12 , B24B37/345
摘要： A polishing apparatus for polishing semiconductor wafers comprises a main polishing structure, which includes a plurality of polishing tables, a plurality of polishing heads and a plurality of load-and-unload stations, and an add-on polishing structure, which includes an additional polishing table and an additional polishing head. The add-on polishing structure can be attached to the main polishing structure to form a larger polishing structure with the additional polishing table and the additional polishing head.
摘要翻译： 用于研磨半导体晶片的抛光装置包括主抛光结构，其包括多个抛光台，多个抛光头和多个装载和卸载台，以及附加抛光结构，其包括附加抛光 桌子和一个额外的抛光头。 附加抛光结构可以附加到主抛光结构以形成具有附加抛光台和附加抛光头的较大抛光结构。
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公开(公告)号：US07364496B2
公开(公告)日：2008-04-29
申请号：US11680588
申请日：2007-02-28
IPC分类号： B24B7/22
CPC分类号： B24B37/30
摘要： A polishing head and method for handling and polishing semiconductor wafers uses a base structure with at least one recess region and an outer flexible membrane that can conform to the at least one recess region to form at least one depression to hold a semiconductor wafer onto the outer flexible membrane when suction is applied to the at least one depression.
摘要翻译： 用于处理和抛光半导体晶片的抛光头和方法使用具有至少一个凹陷区域和外部柔性膜的基底结构，所述至少一个凹陷区域和外部柔性膜可以符合至少一个凹部区域以形成至少一个凹陷部，以将半导体晶片保持在外部 当对至少一个凹陷施加抽吸时的柔性膜。
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公开(公告)号：US5595337A
公开(公告)日：1997-01-21
申请号：US460954
申请日：1995-06-05
IPC分类号： C23C14/34 , C23C14/35 , C23C14/56 , F28F3/12 , H01J37/32 , H01J37/34 , B23K20/00 , B23K20/22
CPC分类号： H01J37/32458 , C23C14/3407 , C23C14/564 , F28F3/12 , H01J37/3411 , H01J37/3435 , H01J37/3497 , H01J2237/022
摘要： A target, target backing plate, and cover plate form a target plate assembly. The sputtering target assembly includes an integral cooling passage. A series of grooves are constructed in either the target backing plate or the target backing cooling cover plate, which are then securely bonded to one another. The sputtering target can be a single monolith with a target backing plate or can be securely attached to the target backing plate by one of any number of conventional bonding methods. Tantalum to titanium, titanium to titanium and aluminum to titanium, diffusion bonding can be used.
摘要翻译： 目标，目标背板和盖板形成目标板组件。 溅射靶组件包括一体的冷却通道。 在目标背板或目标背衬冷却盖板中构造一系列凹槽，然后它们彼此牢固地结合。 溅射靶可以是具有目标背板的单个整料，或者可以通过任何数量的常规粘合方法之一牢固地附接到目标背板。 钽到钛，钛到钛和铝到钛，可以使用扩散接合。
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公开(公告)号：US5676803A
公开(公告)日：1997-10-14
申请号：US786041
申请日：1997-01-21
CPC分类号： H01J37/32458 , C23C14/3407 , C23C14/564 , F28F3/12 , H01J37/3411 , H01J37/3435 , H01J37/3497 , H01J2237/022
摘要： A target, target backing plate, and cover plate form a target plate assembly. The sputtering target assembly includes an integral cooling passage. A series of grooves are constructed in either the target backing plate or the target backing cooling cover plate, which are then securely bonded to one another. The sputtering target can be a single monolith with a target backing plate or can be securely attached to the target backing plate by one of any number of conventional bonding methods. Tantalum to titanium, titanium to titanium and aluminum to titanium, diffusion bonding can be used. The target plate assembly completely covers and seals against a top opening of a sputtering processing chamber. Cooling liquid connections are provided only from the perimeter of the target assembly. When a top vacuum chamber seals the side opposite the pressure chamber, the pressure on both sides of the target assembly is nearly equalized. Large thin target assemblies, such as large flat plates used for flat panel displays can be sputtered effectively and uniformly without adverse sputtering effects due to target deflection or cooling deficiencies. The energized target assembly is protected from adjacent components by overlapping insulators to prevent accidents and isolate the target assembly from other components. An electrical connection to the target assembly remains unconnected until a vacuum is produced in the top chamber.
摘要翻译： 目标，目标背板和盖板形成目标板组件。 溅射靶组件包括一体的冷却通道。 在目标背板或目标背衬冷却盖板中构造一系列凹槽，然后它们彼此牢固地结合。 溅射靶可以是具有目标背板的单个整料，或者可以通过任何数量的常规粘合方法之一牢固地附接到目标背板。 钽到钛，钛到钛和铝到钛，可以使用扩散接合。 靶板组件完全覆盖并密封溅射处理室的顶部开口。 冷却液连接仅从目标组件的周边提供。 当顶部真空室密封与压力室相对的一侧时，目标组件两侧的压力几乎相等。 用于平板显示器的大型平板的大型薄目标组件可以有效且均匀地溅射，而不会由于目标偏转或冷却缺陷而产生不利的溅射效应。 通过重叠的绝缘体将通电的目标组件保护成相邻的部件，以防止事故发生并将目标组件与其他部件隔离。 与目标组件的电连接保持不连接，直到在顶部腔室中产生真空。
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公开(公告)号：US5603816A
公开(公告)日：1997-02-18
申请号：US461822
申请日：1995-06-05
CPC分类号： H01J37/32458 , C23C14/3407 , C23C14/564 , F28F3/12 , H01J37/3411 , H01J37/3435 , H01J37/3497 , H01J2237/022
摘要： A target, target backing plate, and cover plate form a target plate assembly. The sputtering target assembly includes an integral cooling passage. A series of grooves are constructed in either the target backing plate or the target backing cooling cover plate, which are then securely bonded to one another. The sputtering target can be a single monolith with a target backing plate or can be securely attached to the target backing plate by one of any number of conventional bonding methods. Tantalum to titanium, titanium to titanium and aluminum to titanium, diffusion bonding can be used.The target plate assembly completely covers and seals against a top opening of a sputtering processing chamber. Cooling liquid connections are provided only from the perimeter of the target assembly. When a top vacuum chamber seals the side opposite the pressure chamber, the pressure on both sides of the target assembly is nearly equalized. Large thin target assemblies, such as large flat plates used for flat panel displays can be sputtered effectively and uniformly without adverse sputtering effects due to target deflection or cooling deficiencies.The energized target assembly is protected from adjacent components by overlapping insulators to prevent accidents and isolate the target assembly from other components. An electrical connection to the target assembly remains unconnected until a vacuum is produced in the top chamber.
摘要翻译： 目标，目标背板和盖板形成目标板组件。 溅射靶组件包括一体的冷却通道。 在目标背板或目标背衬冷却盖板中构造一系列凹槽，然后它们彼此牢固地结合。 溅射靶可以是具有目标背板的单个整料，或者可以通过任何数量的常规粘合方法之一牢固地附接到目标背板。 钽到钛，钛到钛和铝到钛，可以使用扩散接合。 靶板组件完全覆盖并密封溅射处理室的顶部开口。 冷却液连接仅从目标组件的周边提供。 当顶部真空室密封与压力室相对的一侧时，目标组件两侧的压力几乎相等。 用于平板显示器的大型平板的大型薄目标组件可以有效且均匀地溅射，而不会由于目标偏转或冷却缺陷而产生不利的溅射效应。 通过重叠的绝缘体将通电的目标组件保护成相邻的部件，以防止事故发生并将目标组件与其他部件隔离。 与目标组件的电连接保持不连接，直到在顶部腔室中产生真空。
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公开(公告)号：US07575220B2
公开(公告)日：2009-08-18
申请号：US10867100
申请日：2004-06-14
IPC分类号： F16K25/00
CPC分类号： F16K51/02 , F16K1/2261 , F16K1/24
摘要： Embodiments of an apparatus for sealing a substrate transfer passage in a chamber are provided. In one embodiment, an apparatus for sealing a substrate transfer passage in a chamber includes an elongated door member having a convex sealing face and a backside. In another embodiment, a chamber having an apparatus for sealing a substrate transfer passage is provided that includes a chamber body having an interior volume, at least one substrate access defined through the chamber body configured to allow passage of a large area substrate therethrough, and a door member having a convex sealing face moveable between a first position that covers the substrate transfer port and a second position clear of the substrate transfer port. In yet another embodiment, the chamber body may be a load lock chamber.
摘要翻译： 提供了用于密封腔室中的基底输送通道的装置的实施例。 在一个实施例中，用于密封腔室中的衬底传送通道的设备包括具有凸密封面和背面的细长门构件。 在另一个实施例中，提供了具有用于密封基板传送通道的设备的室，其包括具有内部容积的室主体，通过室主体限定的至少一个基板通路，其被构造成允许大面积基板通过其中， 门构件具有可在覆盖衬底传送端口的第一位置和离开衬底传送端口的第二位置之间移动的凸形密封面。 在另一个实施例中，室主体可以是装载锁定室。
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9.发明授权
公开(公告)号：US5611865A
公开(公告)日：1997-03-18
申请号：US605581
申请日：1996-02-14
CPC分类号： C23C16/042 , C23C16/4585
摘要： Centering pins mounted to a susceptor in a vacuum chamber align a glass substrate with respect to the susceptor on which it is supported, and with respect to a shadow frame which overlies the periphery of the substrate and protects the edge and underside of the substrate from undesired processing.Shaped pins loosely mounted in openings in the susceptor so that the pins extend above the upper surface of the susceptor support the centered glass substrate during the transporting stages, but recess into the heated susceptor during processing.
摘要翻译： 安装到真空室中的基座的定心销相对于其所支撑的基座对准玻璃基板，并且相对于覆盖在基板的周边的阴影框架对准，并且保护基板的边缘和下侧不受不利影响 处理。 形状的销松散地安装在基座中的开口中，使得销在延伸到基座的上表面之上延伸，在输送阶段期间支撑中心的玻璃基板，但在加工期间凹入加热的基座。
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公开(公告)号：US5518593A
公开(公告)日：1996-05-21
申请号：US303098
申请日：1994-09-08
IPC分类号： C23C14/34 , C23C14/56 , H01J37/32 , H01J37/34 , H01L21/203
CPC分类号： H01J37/32458 , C23C14/3407 , C23C14/564 , H01J37/3411 , H01J37/3435 , H01J37/3497 , H01J2237/022
摘要： A shield in a PVD vacuum processing chamber having a configuration which minimizes or eliminates particulates originating from flaking or peeling off from the shield and from arcing between the biased target and surrounding grounded pieces is disclosed. The shield has an "h" cross section with the lower arch of the "h" facing a heater assembly which heats the shield to a temperature approximately equivalent to the temperature of the sputter deposited material. The surface of the shield is polished to promote the release of H.sub.2 O molecules from its surface during the time when a vacuum is initially being pumped. The inside surface of the shield (facing a heater assembly) is treated to have a higher coefficient of surface emissivity than the outer surface to retain more energy and provide more efficient heating. A shadow frame which spans the gap between the edge of the shield and the edge of the substrate being processed is indirectly heated by having a portion of its surface facing a matching portion of the shield, both portions having high emissivities. The shield is supported in the vacuum chamber and the shadow frame on the shield by a series of knife edge support assemblies.
摘要翻译： 公开了一种PVD真空处理室中的屏蔽罩，其具有最小化或消除源自屏蔽件剥离或剥离的微粒以及偏置的目标和周围的接地片之间的电弧的结构。 屏蔽件具有“h”横截面，其中“h”的下拱形面向加热器组件，该加热器组件将屏蔽件加热至与溅射沉积材料的温度大致相同的温度。 在最初抽真空时，屏蔽表面被抛光以促进H2O分子从其表面的释放。 屏蔽件的内表面（面向加热器组件）被处理成具有比外表面更高的表面发射系数，以保持更多的能量并提供更有效的加热。 通过使屏蔽体的一部分面对屏蔽件的匹配部分，间隔地加热跨越屏蔽边缘和正被处理的基板的边缘之间的间隙的阴影框架，两部分具有高的发射率。 屏蔽通过一系列刀刃支撑组件支撑在真空室和屏蔽罩上的阴影框架上。
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