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98 条记录 (耗时 0.027 秒)

    Shield configuration for vacuum chamber
    1.
    发明授权
    Shield configuration for vacuum chamber 失效
    真空室的屏蔽配置

    公开(公告)号：US5518593A

    公开(公告)日：1996-05-21

    申请号：US303098

    申请日：1994-09-08

    申请人： Akihiro Hosokawa ,  Richard E. Demaray ,  David E. Berkstresser

    发明人： Akihiro Hosokawa ,  Richard E. Demaray ,  David E. Berkstresser

    IPC分类号： C23C14/34 ,  C23C14/56 ,  H01J37/32 ,  H01J37/34 ,  H01L21/203

    CPC分类号： H01J37/32458 ,  C23C14/3407 ,  C23C14/564 ,  H01J37/3411 ,  H01J37/3435 ,  H01J37/3497 ,  H01J2237/022

    摘要： A shield in a PVD vacuum processing chamber having a configuration which minimizes or eliminates particulates originating from flaking or peeling off from the shield and from arcing between the biased target and surrounding grounded pieces is disclosed. The shield has an "h" cross section with the lower arch of the "h" facing a heater assembly which heats the shield to a temperature approximately equivalent to the temperature of the sputter deposited material. The surface of the shield is polished to promote the release of H.sub.2 O molecules from its surface during the time when a vacuum is initially being pumped. The inside surface of the shield (facing a heater assembly) is treated to have a higher coefficient of surface emissivity than the outer surface to retain more energy and provide more efficient heating. A shadow frame which spans the gap between the edge of the shield and the edge of the substrate being processed is indirectly heated by having a portion of its surface facing a matching portion of the shield, both portions having high emissivities. The shield is supported in the vacuum chamber and the shadow frame on the shield by a series of knife edge support assemblies.

    摘要翻译： 公开了一种PVD真空处理室中的屏蔽罩，其具有最小化或消除源自屏蔽件剥离或剥离的微粒以及偏置的目标和周围的接地片之间的电弧的结构。 屏蔽件具有“h”横截面，其中“h”的下拱形面向加热器组件，该加热器组件将屏蔽件加热至与溅射沉积材料的温度大致相同的温度。 在最初抽真空时，屏蔽表面被抛光以促进H2O分子从其表面的释放。 屏蔽件的内表面（面向加热器组件）被处理成具有比外表面更高的表面发射系数，以保持更多的能量并提供更有效的加热。 通过使屏蔽体的一部分面对屏蔽件的匹配部分，间隔地加热跨越屏蔽边缘和正被处理的基板的边缘之间的间隙的阴影框架，两部分具有高的发射率。 屏蔽通过一系列刀刃支撑组件支撑在真空室和屏蔽罩上的阴影框架上。

    Non-planar magnet tracking during magnetron sputtering
    2.
    发明授权
    Non-planar magnet tracking during magnetron sputtering 失效
    磁控溅射过程中的非平面磁体跟踪

    公开(公告)号：US5855744A

    公开(公告)日：1999-01-05

    申请号：US684446

    申请日：1996-07-19

    申请人： Harlan I. Halsey ,  Richard E. Demaray ,  Russell Black ,  Akihiro Hosokawa ,  Allan De Salvo ,  Victoria L. Hall

    发明人： Harlan I. Halsey ,  Richard E. Demaray ,  Russell Black ,  Akihiro Hosokawa ,  Allan De Salvo ,  Victoria L. Hall

    IPC分类号： C23C14/35 ,  H01J37/34 ,  H01L21/203

    CPC分类号： H01J37/3455 ,  H01J37/3408

    摘要： The structure and method which improves the film thickness uniformity or thickness control when using magnetron sputtering by adjusting the distance between the magnetron or a portion of the magnetron and the sputtering target to provide an improvement in the film thickness uniformity. Shimmed rails, contoured rails, contoured surfaces, cam plates, and cam plate control followers are utilized to achieve an improvement in film thickness uniformity or thickness control due to anomalies in magnetic field as a magnetron assembly moves back and forth when sputtering substrates (utilized primarily for rectangularly shaped substrates).

    摘要翻译： 通过调整磁控管或磁控管的一部分与溅射靶之间的距离来改善使用磁控管溅射时的膜厚均匀性或厚度控制的结构和方法，以提高膜厚均匀性。 由于磁控管组件在溅射基板（来自主要应用时）来回移动，因此利用薄板轨道，轮廓轨道，轮廓表面，凸轮板和凸轮板控制跟随器来实现由于磁场异常而导致的膜厚度均匀性或厚度控制的改进 对于矩形基板）。

    Shadow frame for substrate processing
    3.
    发明授权
    Shadow frame for substrate processing 失效
    阴影框架用于衬底处理

    公开(公告)号：US06773562B1

    公开(公告)日：2004-08-10

    申请号：US09026575

    申请日：1998-02-20

    申请人： Makoto Inagawa ,  Akihiro Hosokawa ,  Richard E. Demaray

    发明人： Makoto Inagawa ,  Akihiro Hosokawa ,  Richard E. Demaray

    IPC分类号： C23C1434

    CPC分类号： H01L21/68721 ,  C23C14/042 ,  C23C14/50 ,  C23C14/564 ,  H01J37/32642 ,  H01L21/67069

    摘要： A vacuum processing chamber with walls defining a cavity for processing a substrate. The processing chamber includes a substrate support for supporting a substrate being processed in the cavity, a shadow frame for preventing processing of a perimeter portion of the substrate, and a shadow frame support supporting the shadow frame within the cavity. The shadow frame is positionable with a gap between an underside of the shadow frame and an upper surface of the substrate. At least one conductive element insulated from the walls and establishes a conductive path from the shadow frame to outside the cavity. The conductive path may be used to discharge charge from the shadow frame at a rate sufficient to prevent a voltage differential from accumulating between the shadow frame and the substrate which would cause arcing therebetween, or to apply a bias voltage to the shadow frame sufficient to attract particles to reduce contamination of the substrate.

    摘要翻译： 具有限定用于处理基板的空腔的壁的真空处理室。 处理室包括用于支撑在空腔中被处理的基板的基板支撑件，用于防止基板的周边部分的处理的阴影框架以及支撑在该空腔内的阴影框架的阴影框架支架。 阴影框架可以在阴影框架的下侧和基板的上表面之间的间隙定位。 至少一个导电元件与墙壁绝缘，并形成从阴影框架到腔体外部的导电路径。 导电路径可以用于以足以防止电压差积聚在阴影框架和衬底之间的电压差的速率从阴影框架中放电，这将导致它们之间的电弧放电，或者将偏置电压施加到足以吸引的阴影框架 颗粒以减少基材的污染。

    Dual substrate loadlock process equipment
    5.
    发明授权
    Dual substrate loadlock process equipment 有权
    双基板负载锁定工艺设备

    公开(公告)号：US07641434B2

    公开(公告)日：2010-01-05

    申请号：US10842079

    申请日：2004-05-10

    申请人： Shinichi Kurita ,  Wendell T. Blonigan ,  Akihiro Hosokawa

    发明人： Shinichi Kurita ,  Wendell T. Blonigan ,  Akihiro Hosokawa

    IPC分类号： C23C16/00 ,  H01L21/00

    CPC分类号： H01L21/68742 ,  B65G49/068 ,  B65G2249/02 ,  B65G2249/04 ,  C23C14/566 ,  C23C14/568 ,  C23C16/54 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67167 ,  H01L21/67201 ,  H01L21/67739 ,  H01L21/67745 ,  H01L21/67748

    摘要： One embodiment relates to a loadlock having a first support structure therein to support one unprocessed substrate and a second support structure therein to support one processed substrate. The first support structure is located above the second support structure. The loadlock includes an elevator to control the vertical position of the support structures. The loadlock also includes a first aperture to permit insertion of an unprocessed substrate into the loadlock and removal of a processed substrate from the loadlock, as well as a second aperture to permit removal of an unprocessed substrate from the loadlock and insertion of a processed substrate into the loadlock. A cooling plate is also located in the loadlock. The cooling plate includes a surface adapted to support a processed substrate thereon. A heating device may be located in the loadlock above the first support structure.

    摘要翻译： 一个实施例涉及一种其中具有第一支撑结构的负载锁，用于支撑一个未处理的基板和其中的第二支撑结构以支撑一个处理的基板。 第一支撑结构位于第二支撑结构的上方。 负载锁包括用于控制支撑结构的垂直位置的电梯。 负载锁还包括第一孔，以允许将未处理的衬底插入到装载锁中并从加载锁中移除经处理的衬底，以及第二孔，以允许将未处理的衬底从负载锁上移除并将经处理的衬底插入 负载锁。 一个冷却板也位于负载锁中。 冷却板包括适于在其上支撑经处理的基板的表面。 加热装置可以位于第一支撑结构上方的装载锁中。

    Chamber for uniform heating of large area substrates
    7.
    发明授权
    Chamber for uniform heating of large area substrates 失效
    用于均匀加热大面积基材的室

    公开(公告)号：US07442900B2

    公开(公告)日：2008-10-28

    申请号：US11396477

    申请日：2006-04-03

    申请人： Makoto Inagawa ,  Akihiro Hosokawa

    发明人： Makoto Inagawa ,  Akihiro Hosokawa

    IPC分类号： F27B5/14 ,  C23C16/00 ,  C23C16/54 ,  H01L21/324

    CPC分类号： H01L21/67109 ,  C23C16/54 ,  F27B17/0025

    摘要： Embodiments of the present invention generally provide an apparatus for providing a uniform thermal profile to a plurality of large area substrates during thermal processing. In one embodiment, an apparatus for thermal processing large area substrates includes a chamber having a plurality of processing zones disposed therein that are coupled to a lift mechanism. The lift mechanism is adapted to vertically position the plurality of processing zones within the chamber. Each processing zone further includes an upper heated plate, a lower heated plate adapted to support a first substrate thereon and an unheated plate adapted to support a second substrate thereon, wherein the unheated plate is disposed between the upper and lower heated plates.

    摘要翻译： 本发明的实施例通常提供一种用于在热处理期间向多个大面积基板提供均匀热分布的装置。 在一个实施例中，用于热处理大面积基板的装置包括具有设置在其中的多个处理区域的室，其联接到升降机构。 提升机构适于将多个处理区域垂直地定位在室内。 每个处理区还包括上加热板，适于在其上支撑第一基板的下加热板和适于在其上支撑第二基板的未加热板，其中未加热板设置在上加热板和下加热板之间。

    COOLED PVD SHIELD
    8.
    发明申请
    COOLED PVD SHIELD 审中-公开
    冷却PVD膜

    公开(公告)号：US20080006523A1

    公开(公告)日：2008-01-10

    申请号：US11764217

    申请日：2007-06-17

    申请人： Akihiro Hosokawa ,  Bradley O. Stimson ,  Hienminh Huu Le ,  Makoto Inagawa

    发明人： Akihiro Hosokawa ,  Bradley O. Stimson ,  Hienminh Huu Le ,  Makoto Inagawa

    IPC分类号： C23C16/00 ,  C23C14/32

    CPC分类号： C23C14/042 ,  C23C14/50 ,  C23C14/564 ,  H01J37/32458 ,  H01J37/32623 ,  H01J37/32651 ,  H01J37/32715

    摘要： The present invention generally comprises a top shield for shielding a shadow frame within a PVD chamber. The top shield may remain in a stationary position and at least partially shield the shadow frame to reduce the amount of material that may deposit on the shadow frame during processing. The top shield may be cooled to reduce the amount of fluxuation in temperature of the top shield and shadow frame during processing and/or during down time.

    摘要翻译： 本发明通常包括用于屏蔽PVD室内的阴影框架的顶部屏蔽件。 顶部屏蔽可以保持在静止位置，并且至少部分地遮蔽阴影框架以减少在处理期间可能沉积在阴影框架上的材料的量。 顶部屏蔽可以被冷却以减少处理期间和/或在停机期间顶部屏蔽和阴影框架的温度的变化量。

    REACTIVE SPUTTERING ZINC OXIDE TRANSPARENT CONDUCTIVE OXIDES ONTO LARGE AREA SUBSTRATES
    9.
    发明申请
    REACTIVE SPUTTERING ZINC OXIDE TRANSPARENT CONDUCTIVE OXIDES ONTO LARGE AREA SUBSTRATES 审中-公开
    氧化锌氧化物透明导电氧化物在大面积基材上的反应性溅射

    公开(公告)号：US20070261951A1

    公开(公告)日：2007-11-15

    申请号：US11697476

    申请日：2007-04-06

    申请人： Yan Ye ,  Ankur Kadam ,  Yanping Li ,  Allen Lau ,  Makoto Inagawa ,  Bradley Stimson ,  Akihiro Hosokawa

    发明人： Yan Ye ,  Ankur Kadam ,  Yanping Li ,  Allen Lau ,  Makoto Inagawa ,  Bradley Stimson ,  Akihiro Hosokawa

    IPC分类号： C23C14/00

    CPC分类号： C23C14/564 ,  C23C14/0063 ,  C23C14/35 ,  H01J37/3244 ,  H01J37/34 ,  H01J37/3438

    摘要： The present invention generally comprises one or more cooled anodes shadowing one or more gas introduction tubes where both the cooled anodes and the gas introduction tubes span a processing space defined between one or more sputtering targets and one or more substrates within a sputtering chamber. The gas introduction tubes may have gas outlets that direct the gas introduced away from the one or more substrates. The gas introduction tubes may introduce reactive gas, such as oxygen, into the sputtering chamber for depositing TCO films by reactive sputtering. During a multiple step sputtering process, the gas flows (i.e., the amount of gas and the type of gas), the spacing between the target and the substrate, and the DC power may be changed to achieve a desired result.

    摘要翻译： 本发明通常包括一个或多个冷却的阳极，其遮蔽一个或多个气体导入管，其中冷却的阳极和气体引入管都跨越在溅射室内的一个或多个溅射靶和一个或多个衬底之间限定的处理空间。 气体导入管可以具有引导从一个或多个基底引入的气体的气体出口。 气体引入管可以将诸如氧的反应性气体引入到用于通过反应溅射沉积TCO膜的溅射室中。 在多步骤溅射处理中，可以改变气体流动（即，气体的量和气体的类型），靶和基板之间的间隔以及DC功率以实现期望的结果。

    Partially suspended rolling magnetron
    10.
    发明申请
    Partially suspended rolling magnetron 有权
    部分悬浮磁控管

    公开(公告)号：US20070193881A1

    公开(公告)日：2007-08-23

    申请号：US11347667

    申请日：2006-02-03

    申请人： Makoto Inagawa ,  Akihiro Hosokawa ,  John White

    发明人： Makoto Inagawa ,  Akihiro Hosokawa ,  John White

    IPC分类号： C23C14/00

    CPC分类号： H01J37/3408 ,  H01J37/3435 ,  H01J37/3455

    摘要： A magnetron scanning and support mechanism in which the magnetron is partially supported from an overhead scanning mechanism through multiple springs coupled to different horizontal locations on the magnetron and partially supported from below at multiple locations on the target, on which it slides or rolls. In one embodiment, the yoke plate is continuous and uniform. In another embodiment, the magnetron's magnetic yoke is divided into two flexible yokes, for example, of complementary serpentine shape and each supporting magnets of respective polarity. The yokes separated by a gap sufficiently small that the two yokes are magnetically coupled. Each yoke has its own set of spring supports from above and rolling/sliding supports from below to allow the magnetron shape to conform to that of the target. Alternatively, narrow slots are formed in a unitary yoke.

    摘要翻译： 一种磁控管扫描和支撑机构，其中磁控管通过耦合到磁控管上的不同水平位置的多个弹簧部分地从顶部扫描机构支撑，并且在其上滑动或滚动的靶上的多个位置处从下方部分支撑。 在一个实施例中，轭板是连续且均匀的。 在另一个实施例中，磁控管的磁轭被分成两个柔性轭，例如互补的蛇形形状和各个极性的每个支撑磁体。 磁轭分开足够小的间隙，使得两个磁轭磁耦合。 每个轭具有其自己的一组弹簧支撑件，从上方起滚动/滑动支撑件，从而允许磁控管形状与靶材的形状一致。 或者，窄槽形成为单一轭。