公开(公告)号：US20140097442A1

公开(公告)日：2014-04-10

申请号：US13647389

申请日：2012-10-09

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Yen-Hsiang Fang ,  Chen-Zi Liao ,  Rong Xuan ,  Chien-Pin Lu ,  Yi-Keng Fu ,  Chih-Wei Hu ,  Hsun-Chih Liu

IPC: H01L33/32

CPC classification number: H01L33/12 ,  H01L33/025 ,  H01L33/32

Abstract: A nitride semiconductor device includes a silicon substrate, a nucleation layer, a first buffer layer, a first type nitride semiconductor layer, a light-emitting layer and a second type nitride semiconductor layer is provided. The nucleation layer is disposed on the silicon substrate. The first buffer layer is disposed on the nucleation layer. The first buffer layer includes a dopant and Gallium, and an atomic radius of the dopant is larger than an atomic radius of Gallium. The first type nitride semiconductor layer is disposed over the first buffer layer. The light-emitting layer is disposed on the first type nitride semiconductor layer. The second type nitride semiconductor layer is disposed on the light-emitting layer.

Abstract translation: 氮化物半导体器件包括硅衬底，成核层，第一缓冲层，第一氮化物半导体层，发光层和第二氮化物半导体层。 成核层设置在硅衬底上。 第一缓冲层设置在成核层上。 第一缓冲层包括掺杂剂和镓，并且掺杂剂的原子半径大于镓的原子半径。 第一种氮化物半导体层设置在第一缓冲层上。 发光层设置在第一氮化物半导体层上。 第二种氮化物半导体层设置在发光层上。

公开(公告)号：US08779468B2

公开(公告)日：2014-07-15

申请号：US13726648

申请日：2012-12-26

Applicant: Industrial Technology Research Institute

Inventor： Yen-Hsiang Fang ,  Chien-Pin Lu ,  Chen-Zi Liao ,  Rong Xuan ,  Yi-Keng Fu ,  Chih-Wei Hu ,  Hsun-Chih Liu

IPC: H01L21/02

CPC classification number: H01L21/02381 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02647 ,  H01L29/267

Abstract: A nitride semiconductor structure including a silicon substrate, a nucleation layer, a discontinuous defect blocking layer, a buffer layer and a nitride semiconductor layer is provided. The nucleation layer disposed on the silicon substrate, wherein the nucleation layer has a defect density d1. A portion of the nucleation layer is covered by the discontinuous defect blocking layer. The buffer layer is disposed on the discontinuous defect blocking layer and a portion of the nucleation layer that is not covered by the discontinuous defect blocking layer. The nitride semiconductor layer is disposed on the buffer layer. A ratio of a defect density d2 of the nitride semiconductor layer to the defect density d1 of the nucleation layer is less than or equal to about 0.5, at a location where about 1 micrometer above the interface between the nitride semiconductor layer and the buffer layer.

Abstract translation: 提供了包括硅衬底，成核层，不连续缺陷阻挡层，缓冲层和氮化物半导体层的氮化物半导体结构。 成核层设置在硅基板上，其中成核层具有缺陷密度d1。 成核层的一部分被不连续的缺陷阻挡层覆盖。 缓冲层设置在不连续缺陷阻挡层和未被不连续缺陷阻挡层覆盖的成核层的一部分。 氮化物半导体层设置在缓冲层上。 在氮化物半导体层和缓冲层之间的界面上方约1微米的位置处，氮化物半导体层的缺陷密度d2与成核层的缺陷密度d1的比率小于或等于约0.5。