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公开(公告)号：US20150111343A1
公开(公告)日：2015-04-23
申请号：US14581653
申请日：2014-12-23
Applicant: Infineon Technologies AG
Inventor： Joachim Mahler , Manfred Mengel , Khalil Hosseini , Klaus Schmidt , Franz-Peter Kalz
IPC: H01L23/00
CPC classification number: H01L24/83 , H01L24/00 , H01L24/24 , H01L24/27 , H01L24/32 , H01L24/73 , H01L24/82 , H01L24/92 , H01L2224/04026 , H01L2224/056 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/06181 , H01L2224/24226 , H01L2224/24246 , H01L2224/245 , H01L2224/2499 , H01L2224/26165 , H01L2224/27462 , H01L2224/29139 , H01L2224/29147 , H01L2224/29155 , H01L2224/32245 , H01L2224/73217 , H01L2224/82002 , H01L2224/82101 , H01L2224/82345 , H01L2224/82385 , H01L2224/82986 , H01L2224/831 , H01L2224/83851 , H01L2224/92144 , H01L2924/01327 , H01L2924/10253 , H01L2924/12042 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/1461 , Y10T29/4913 , H01L2924/00 , H01L2924/00014 , H01L2924/014 , H01L2924/01028 , H01L2924/00012 , H01L2924/01029 , H01L2924/01047
Abstract: An electronic component includes an electrically conductive carrier. The electrically conductive carrier includes a carrier surface and a semiconductor chip includes a chip surface. One or both of the carrier surface and the chip surface include a non-planar structure. The chip is attached to the carrier with the chip surface facing towards the carrier surface so that a gap is provided between the chip surface and the carrier surface due to the non-planar structure of one or both of the carrier surface and the first chip surface. The electronic component further includes a first galvanically deposited metallic layer situated in the gap.
Abstract translation: 电子部件包括导电载体。 导电载体包括载体表面，半导体芯片包括芯片表面。 载体表面和芯片表面中的一个或两个包括非平面结构。 芯片附着到载体上，其芯片表面面向载体表面，使得由于载体表面和第一芯片表面之一或两者的非平面结构，在芯片表面和载体表面之间提供间隙 。 电子部件还包括位于间隙中的第一电沉积金属层。
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公开(公告)号：US10734352B2
公开(公告)日：2020-08-04
申请号：US16148316
申请日：2018-10-01
Applicant: Infineon Technologies AG
Inventor： Irmgard Escher-Poeppel , Khalil Hosseini , Johannes Lodermeyer , Joachim Mahler , Thorsten Meyer , Georg Meyer-Berg , Ivan Nikitin , Reinhard Pufall , Edmund Riedl , Klaus Schmidt , Manfred Schneegans , Patrick Schwarz
IPC: H01L23/00
Abstract: A metallic interconnection and a semiconductor arrangement including the same are described, wherein a method of manufacturing the same may include: providing a first structure including a first metallic layer having protruding first microstructures; providing a second structure including a second metallic layer having protruding second microstructures; contacting the first and second microstructures to form a mechanical connection between the structures, the mechanical connection being configured to allow fluid penetration; removing one or more non-metallic compounds on the first metallic layer and the second metallic layer with a reducing agent that penetrates the mechanical connection and reacts with the one or more non-metallic compounds; and heating the first metallic layer and the second metallic layer at a temperature causing interdiffusion of the first metallic layer and the second metallic layer to form the metallic interconnection between the structures.
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公开(公告)号：US20190103378A1
公开(公告)日：2019-04-04
申请号：US16148316
申请日：2018-10-01
Applicant: Infineon Technologies AG
Inventor： Irmgard Escher-Poeppel , Khalil Hosseini , Johannes Lodermeyer , Joachim Mahler , Thorsten Meyer , Georg Meyer-Berg , Ivan Nikitin , Reinhard Pufall , Edmund Riedl , Klaus Schmidt , Manfred Schneegans , Patrick Schwarz
IPC: H01L23/00
Abstract: A metallic interconnection and a semiconductor arrangement including the same are described, wherein a method of manufacturing the same may include: providing a first structure including a first metallic layer having protruding first microstructures; providing a second structure including a second metallic layer having protruding second microstructures; contacting the first and second microstructures to form a mechanical connection between the structures, the mechanical connection being configured to allow fluid penetration; removing one or more non-metallic compounds on the first metallic layer and the second metallic layer with a reducing agent that penetrates the mechanical connection and reacts with the one or more non-metallic compounds; and heating the first metallic layer and the second metallic layer at a temperature causing interdiffusion of the first metallic layer and the second metallic layer to form the metallic interconnection between the structures.
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公开(公告)号：US09559078B2
公开(公告)日：2017-01-31
申请号：US14581653
申请日：2014-12-23
Applicant: Infineon Technologies AG
Inventor： Joachim Mahler , Manfred Mengel , Khalil Hosseini , Klaus Schmidt , Franz-Peter Kalz
CPC classification number: H01L24/83 , H01L24/00 , H01L24/24 , H01L24/27 , H01L24/32 , H01L24/73 , H01L24/82 , H01L24/92 , H01L2224/04026 , H01L2224/056 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/06181 , H01L2224/24226 , H01L2224/24246 , H01L2224/245 , H01L2224/2499 , H01L2224/26165 , H01L2224/27462 , H01L2224/29139 , H01L2224/29147 , H01L2224/29155 , H01L2224/32245 , H01L2224/73217 , H01L2224/82002 , H01L2224/82101 , H01L2224/82345 , H01L2224/82385 , H01L2224/82986 , H01L2224/831 , H01L2224/83851 , H01L2224/92144 , H01L2924/01327 , H01L2924/10253 , H01L2924/12042 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/1461 , Y10T29/4913 , H01L2924/00 , H01L2924/00014 , H01L2924/014 , H01L2924/01028 , H01L2924/00012 , H01L2924/01029 , H01L2924/01047
Abstract: An electronic component includes an electrically conductive carrier. The electrically conductive carrier includes a carrier surface and a semiconductor chip includes a chip surface. One or both of the carrier surface and the chip surface include a non-planar structure. The chip is attached to the carrier with the chip surface facing towards the carrier surface so that a gap is provided between the chip surface and the carrier surface due to the non-planar structure of one or both of the carrier surface and the first chip surface. The electronic component further includes a first galvanically deposited metallic layer situated in the gap.
Abstract translation: 电子部件包括导电载体。 导电载体包括载体表面，半导体芯片包括芯片表面。 载体表面和芯片表面中的一个或两个包括非平面结构。 芯片附着到载体上，其芯片表面面向载体表面，使得由于载体表面和第一芯片表面之一或两者的非平面结构，在芯片表面和载体表面之间提供间隙 。 电子部件还包括位于间隙中的第一电沉积金属层。
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