公开(公告)号：US20210167036A1

公开(公告)日：2021-06-03

申请号：US17101339

申请日：2020-11-23

Applicant: Infineon Technologies AG

Inventor： Oliver HELLMUND ,  Barbara EICHINGER ,  Thorsten MEYER ,  Ingo MURI

IPC: H01L23/00 ,  H01L23/544 ,  H01L21/78

Abstract: A semiconductor device includes a semiconductor die, an electrical contact arranged on a surface of the semiconductor die, and a metal layer arranged on the electrical contact, wherein the metal layer includes a singulated part of at least one of a metal foil, a metal sheet, a metal leadframe, or a metal plate. When viewed in a direction perpendicular to the surface of the semiconductor die, a footprint of the electrical contact and a footprint of the metal layer are substantially congruent.

公开(公告)号：US20180175150A1

公开(公告)日：2018-06-21

申请号：US15848707

申请日：2017-12-20

Applicant: Infineon Technologies AG

Inventor： Anton MAUDER ,  Oliver HELLMUND ,  Peter IRSIGLER ,  Jens Peter KONRATH ,  David LAFORET ,  Maik LANGNER ,  Markus NEUBER ,  Hans-Joachim SCHULZE ,  Ralf SIEMIENIEC ,  Knut STAHRENBERG ,  Olaf STORBECK

IPC: H01L29/16 ,  H01L29/51 ,  H01L21/28 ,  H01L21/02

Abstract: A body structure and a drift zone are formed in a semiconductor layer, wherein the body structure and the drift zone form a first pn junction. A silicon nitride layer is formed on the semiconductor layer. A silicon oxide layer is formed from at least a vertical section of the silicon nitride layer by oxygen radical oxidation.

公开(公告)号：US20170031239A1

公开(公告)日：2017-02-02

申请号：US15220480

申请日：2016-07-27

Applicant: Infineon Technologies AG

Inventor： Sebastian SCHMIDT ,  Martina SEIDER-SCHMIDT ,  Peter IRSIGLER ,  Oliver HELLMUND

IPC: G03F1/50 ,  G03F7/16 ,  G03F7/20 ,  H01L21/027

CPC classification number: G03F1/50 ,  G03F1/70 ,  G03F7/0035 ,  H01L21/0274 ,  H01L21/32139

Abstract: In various embodiments, a reticle is provided. The reticle may include a feature. The feature may include a base structure, and a step structure. The a step structure includes a center region and an edge region. The center region includes, in a top view, a larger width than the edge region. The step structure is configured to be arranged over a topography step of a substrate to be lithographically processed.

Abstract translation: 在各种实施例中，提供了掩模版。 掩模版可以包括特征。 该特征可以包括基础结构和阶梯结构。 该台阶结构包括中心区域和边缘区域。 中心区域在顶视图中包括比边缘区域更大的宽度。 台阶结构被配置为布置在待光刻处理的基板的地形台阶上。