公开(公告)号：US20160049411A1

公开(公告)日：2016-02-18

申请号：US14927608

申请日：2015-10-30

Applicant: Infineon Technologies AG

Inventor： Kerstin KAEMMER ,  Thomas BERTRAMS ,  Henning FEICK ,  Olaf STORBECK ,  Matthias SCHMEIDE

IPC: H01L27/112 ,  H01L29/36 ,  H01L23/525 ,  H01L29/423 ,  H01L29/167

CPC classification number: H01L27/11206 ,  H01L21/02233 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/28211 ,  H01L21/2822 ,  H01L23/5256 ,  H01L29/42368 ,  H01L29/4238 ,  H01L29/512 ,  H01L29/513 ,  H01L2924/0002 ,  H01L2924/00

Abstract: According to various embodiments, a method for processing a carrier may include: doping a carrier with fluorine such that a first surface region of the carrier is fluorine doped and a second surface region of the carrier is at least one of free from the fluorine doping or less fluorine doped than the first surface region; and oxidizing the carrier to grow a first gate oxide layer from the first surface region of the carrier with a first thickness and simultaneously from the second surface region of the carrier with a second thickness different from the first thickness.

公开(公告)号：US20170018557A1

公开(公告)日：2017-01-19

申请号：US15278076

申请日：2016-09-28

Applicant: Infineon Technologies AG

Inventor： Kerstin KAEMMER ,  Thomas BERTRAMS ,  Henning FEICK ,  Olaf STORBECK ,  Matthias SCHMEIDE

IPC: H01L27/112 ,  H01L21/265 ,  H01L21/28 ,  H01L29/423 ,  H01L29/51

CPC classification number: H01L27/11206 ,  H01L21/02233 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/28211 ,  H01L21/2822 ,  H01L23/5256 ,  H01L29/42368 ,  H01L29/4238 ,  H01L29/512 ,  H01L29/513 ,  H01L2924/0002 ,  H01L2924/00

Abstract: According to various embodiments, a method for processing a carrier may include: doping a carrier with fluorine such that a first surface region of the carrier is fluorine doped and a second surface region of the carrier is at least one of free from the fluorine doping or less fluorine doped than the first surface region; and oxidizing the carrier to grow a first gate oxide layer from the first surface region of the carrier with a first thickness and simultaneously from the second surface region of the carrier with a second thickness different from the first thickness.

Abstract translation: 根据各种实施例，一种用于处理载体的方法可以包括：用氟掺杂载体，使得载体的第一表面区域是氟掺杂的，载体的第二表面区域是不含氟掺杂或 比第一表面区域少掺杂氟; 以及氧化所述载体以从所述载体的所述第一表面区域以第一厚度生长第一栅极氧化物层，并且与所述载体的所述第二表面区域同时地具有不同于所述第一厚度的第二厚度。

公开(公告)号：US20180175150A1

公开(公告)日：2018-06-21

申请号：US15848707

申请日：2017-12-20

Applicant: Infineon Technologies AG

Inventor： Anton MAUDER ,  Oliver HELLMUND ,  Peter IRSIGLER ,  Jens Peter KONRATH ,  David LAFORET ,  Maik LANGNER ,  Markus NEUBER ,  Hans-Joachim SCHULZE ,  Ralf SIEMIENIEC ,  Knut STAHRENBERG ,  Olaf STORBECK

IPC: H01L29/16 ,  H01L29/51 ,  H01L21/28 ,  H01L21/02

Abstract: A body structure and a drift zone are formed in a semiconductor layer, wherein the body structure and the drift zone form a first pn junction. A silicon nitride layer is formed on the semiconductor layer. A silicon oxide layer is formed from at least a vertical section of the silicon nitride layer by oxygen radical oxidation.