公开(公告)号：US09941111B2

公开(公告)日：2018-04-10

申请号：US14724947

申请日：2015-05-29

Applicant: Infineon Technologies AG

Inventor： Gerhard Schmidt ,  Markus Kahn ,  Christian Maier ,  Philipp Koch ,  Juergen Steinbrenner

IPC: H01L21/02 ,  H01L21/28 ,  H01L29/51 ,  H01L29/06 ,  H01L29/16 ,  H01L21/3065 ,  H01L29/66

CPC classification number: H01L21/02115 ,  H01L21/02046 ,  H01L21/02164 ,  H01L21/02301 ,  H01L21/02315 ,  H01L21/28194 ,  H01L21/3065 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/0638 ,  H01L29/1602 ,  H01L29/1604 ,  H01L29/51 ,  H01L29/66181 ,  H01L29/7395

Abstract: According to various embodiments, a method for processing a semiconductor layer may include: generating an etch plasma in a plasma chamber of a remote plasma source, wherein the plasma chamber of the remote plasma source is coupled to a processing chamber for processing the semiconductor layer; introducing the etch plasma into the processing chamber to remove a native oxide layer from a surface of the semiconductor layer and at most a negligible amount of semiconductor material of the semiconductor layer; and, subsequently, depositing a dielectric layer directly on the surface of the semiconductor layer.