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公开(公告)号：US20240182297A1
公开(公告)日：2024-06-06
申请号：US18519897
申请日：2023-11-27
Applicant: Infineon Technologies AG
Inventor： Hutomo Suryo Wasisto , Fabian Streb , Sebastian Anzinger , Marc Füldner , Dominic Maier
CPC classification number: B81C1/00285 , B81B7/0029 , B81B2201/0257 , B81C2201/0132 , H04R1/023 , H04R2201/003 , H04R2201/029
Abstract: A method for manufacturing a micromechanical environmental barrier chip includes providing a substrate having a first surface and an opposite second surface, depositing a material layer having a different etch characteristic than the substrate onto the first surface, creating a microstructured micromechanical environmental barrier structure on top of the material layer by applying a microstructuring process, applying an anisotropic etching process comprising at least one etching step for anisotropically etching from the second surface towards the first surface to create at least a cavity underneath the micromechanical environmental barrier structure, the cavity extending between the second surface and the material layer, and removing the material layer underneath the micromechanical environmental barrier structure to expose the environmental barrier structure.
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2.发明公开公开(公告)号：US20240182295A1
公开(公告)日：2024-06-06
申请号：US18512582
申请日：2023-11-17
Applicant: Infineon Technologies AG
Inventor： Hutomo Suryo Wasisto , Marc Füldner , Dominic Maier , Andreas Wiesbauer , Sebastian Anzinger
CPC classification number: B81B7/02 , H01L24/48 , H01L24/73 , B81B2201/0257 , H01L2224/48137 , H01L2224/73265 , H01L2924/1461
Abstract: A method for manufacturing a MEMS pressure transducer chip with a hybrid integrated environmental barrier structure includes a step of providing a substrate comprising at least one membrane, a step of structuring a stepped recess structure into the substrate, the stepped recess structure comprising a first recess having a first lateral width and an adjacent second recess having a larger second lateral width, where the stepped recess structure extends between the membrane and a substrate surface opposite to the membrane, and a step of arranging an environmental barrier structure inside the second recess.
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Patent Agency Ranking
3.发明公开公开(公告)号：US20240253977A1
公开(公告)日：2024-08-01
申请号：US18414932
申请日：2024-01-17
Applicant: Infineon Technologies AG
Inventor： Hutomo Suryo Wasisto , Sebastian Anzinger , Fabian Streb
CPC classification number: B81C1/00182 , B81B3/0027 , B81B2201/0257 , B81B2203/0127 , B81C2201/0109 , B81C2201/0143 , B81C2201/0149 , B81C2201/0154
Abstract: In accordance with an embodiment, a method producing a microelectromechanical system (MEMS) device includes: providing a substrate comprising a first substrate surface and an opposite second substrate surface, wherein the substrate comprises a sacrificial layer arranged at the first substrate surface; depositing a membrane material layer onto the sacrificial layer; the membrane material layer forms a free-standing membrane structure covering the cavity; and creating nanostructures in at least one of a first membrane surface or an opposite second membrane surface of the membrane material layer, wherein the nanostructures protrude from the respective membrane surface of the membrane material layer, and the nanostructures are created by applying a laser structuring process.
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公开(公告)号：US20240253976A1
公开(公告)日：2024-08-01
申请号：US18417792
申请日：2024-01-19
Applicant: Infineon technologies AG
Inventor： Hutomo Suryo Wasisto , Sebastian Anzinger , Fabian Streb
CPC classification number: B81B7/0029 , B81C1/00158 , B81B2201/0257 , B81B2203/0127 , B81B2207/11 , B81C2201/0108 , B81C2201/0123 , B81C2201/0143
Abstract: In accordance with an embodiment a microelectromechanical system (MEMS) device including a substrate comprising a vertically extending through hole and a horizontally extending membrane structure covering the through hole, where the membrane structure comprises a plurality of upright nanostructures for providing a liquid repellent membrane surface. In other embodiments, certain methods are used for fabricating MEMS devices.
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公开(公告)号：US20240187770A1
公开(公告)日：2024-06-06
申请号：US18512395
申请日：2023-11-17
Applicant: Infineon Technologies AG
Inventor： Hutomo Suryo Wasisto , Fabian Streb , Sebastian Anzinger , Marc Füldner , Dominic Maier
CPC classification number: H04R1/086 , B81C1/00547 , B82B3/0023 , H04R19/005 , H04R19/04 , H04R2201/003
Abstract: A method for manufacturing a MEMS microphone device with a monolithically integrated environmental barrier structure includes providing a substrate structure including a base substrate and an additional substrate material layer deposited on the base substrate, creating a micromechanical environmental barrier structure in the substrate structure by applying a microstructuring process, where the micromechanical environmental barrier structure is configured to let a first amount of air pass through while preventing a second amount of at least one of moisture, liquid, oil or solid environmental particles from passing through, and creating a MEMS sound transducer structure in the additional substrate material of the substrate structure by applying a microstructuring process.
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公开(公告)号：US20240181401A1
公开(公告)日：2024-06-06
申请号：US18520028
申请日：2023-11-27
Applicant: Infineon Technologies AG
Inventor： Sebastian Anzinger , Hutomo Suryo Wasisto , Sebastian Schwagerl
IPC: B01D67/00
CPC classification number: B01D67/0079 , B01D67/00042 , B01D67/0034 , B01D67/00412 , B01D67/0093 , B01D2325/30
Abstract: A method for producing a microstructured air-permeable environmental barrier membrane includes providing a substrate, and structuring a through hole into the substrate, the through hole extending fully through the substrate between two opposite surfaces of the substrate, leaving the through hole uncovered, and depositing one or more nanofibers onto at least one of the two opposite substrate surfaces by applying at least one of an electrospinning or blowspinning method, such that the spun nanofibers combine to a network of nanofibers that forms a free-standing and mechanically compliant nanofibrous membrane covering the previously uncovered through hole.
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公开(公告)号：US20240067520A1
公开(公告)日：2024-02-29
申请号：US18239986
申请日：2023-08-30
Applicant: Infineon Technologies AG
Inventor： Fabian Streb , Johann Straßer , Hans-Jörg Timme , Marc Füldner , Arnaud Walther , Hutomo Suryo Wasisto
CPC classification number: B81C1/00952 , B81B3/0005 , B81B2203/0127 , B81B2203/0315 , B81B2203/04 , B81C2201/0114 , B81C2201/0133 , B81C2201/0176 , B81C2201/112
Abstract: An encapsulated MEMS device and a method for manufacturing the MEMS device are provided. The method comprises providing a cavity structure having an inner volume comprising a plurality of MEMS elements, which are relatively displaceable with respect to each other, and having an opening structure to the inner volume, depositing a Self-Assembled Monolayer (SAM) through the opening structure onto exposed surfaces within the inner volume of the cavity structure, and closing the cavity structure by applying a layer structure on the opening structure for providing a hermetically closed cavity.
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