利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

22 条记录 (耗时 0.012 秒)

    Method for the production of planar structures
    3.
    发明授权
    Method for the production of planar structures 有权
    平面结构生产方法

    公开(公告)号：US08003537B2

    公开(公告)日：2011-08-23

    申请号：US11779794

    申请日：2007-07-18

    申请人： Xavier Rottenberg ,  Phillip Ekkels ,  Hendrikus Tilmans ,  Walter De Raedt

    发明人： Xavier Rottenberg ,  Phillip Ekkels ,  Hendrikus Tilmans ,  Walter De Raedt

    IPC分类号： H01L21/302

    CPC分类号： B81C1/00611 ,  B81B2201/0271 ,  B81C2201/0123

    摘要： A method for the production of a planar structure is disclosed. The method comprises producing on a substrate a plurality of structures of substantially equal height, and there being a space in between the plurality of structures. The method further comprises providing a fill layer of electromagnetic radiation curable material substantially filling the space between the structures. The method further comprises illuminating a portion of the fill layer with electromagnetic radiation, hereby producing a exposed portion and an unexposed portion, the portions being separated by an interface substantially parallel with the first main surface of the substrate. The method further comprises removing the portion above the interface.

    摘要翻译： 公开了一种制造平面结构的方法。 该方法包括在基板上制造具有大致相同高度的多个结构，并且在多个结构之间存在空间。 该方法还包括提供基本上填充结构之间的空间的电磁辐射可固化材料的填充层。 该方法还包括用电磁辐射照射填充层的一部分，从而产生暴露部分和未曝光部分，该部分被基本平行于基底的第一主表面的界面分开。 该方法还包括去除界面上方的部分。

    METHOD FOR THE PRODUCTION OF PLANAR STRUCTURES
    4.
    发明申请
    METHOD FOR THE PRODUCTION OF PLANAR STRUCTURES 有权
    生产平面结构的方法

    公开(公告)号：US20080038916A1

    公开(公告)日：2008-02-14

    申请号：US11779794

    申请日：2007-07-18

    申请人： Xavier Rottenberg ,  Phillip Ekkels ,  Hendrikus Tilmans ,  Walter De Raedt

    发明人： Xavier Rottenberg ,  Phillip Ekkels ,  Hendrikus Tilmans ,  Walter De Raedt

    IPC分类号： H01L21/4763 ,  H01L21/311

    CPC分类号： B81C1/00611 ,  B81B2201/0271 ,  B81C2201/0123

    摘要： A method for the production of a planar structure is disclosed. The method comprises producing on a substrate a plurality of structures of substantially equal height, and there being a space in between the plurality of structures. The method further comprises providing a fill layer of electromagnetic radiation curable material substantially filling the space between the structures. The method further comprises illuminating a portion of the fill layer with electromagnetic radiation, hereby producing a exposed portion and an unexposed portion, the portions being separated by an interface substantially parallel with the first main surface of the substrate. The method further comprises removing the portion above the interface.

    摘要翻译： 公开了一种制造平面结构的方法。 该方法包括在基板上制造具有大致相同高度的多个结构，并且在多个结构之间存在空间。 该方法还包括提供基本上填充结构之间的空间的电磁辐射可固化材料的填充层。 该方法还包括用电磁辐射照射填充层的一部分，从而产生暴露部分和未曝光部分，该部分被基本平行于基底的第一主表面的界面分开。 该方法还包括去除界面上方的部分。

    METHOD FOR MANUFACTURING A MICROMECHANICAL STRUCTURE AND A COMPONENT HAVING THIS MICROMECHANICAL STUCTURE
    6.
    发明申请
    METHOD FOR MANUFACTURING A MICROMECHANICAL STRUCTURE AND A COMPONENT HAVING THIS MICROMECHANICAL STUCTURE 审中-公开
    制备微观结构的方法和具有该微观结构的组分

    公开(公告)号：US20160376145A1

    公开(公告)日：2016-12-29

    申请号：US15192185

    申请日：2016-06-24

    申请人： Robert Bosch GmbH

    发明人： Uwe Hansen ,  Sebastian Schuler-Watkins

    IPC分类号： B81B7/00 ,  G01D11/00 ,  B81C1/00

    CPC分类号： G01D11/00 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0264 ,  B81C1/00309 ,  B81C2201/0123

    摘要： A method for manufacturing a micromechanical component and a micromechanical component. The micromechanical component includes a sensor substrate and a cap situated thereon. For creating the cap, a plurality of openings is introduced into a cap substrate in a delimited area on the surface of the front side in the form of microperforations. The openings end in the cap substrate, i.e. they do not go all the way through the cap substrate and are therefore shallow. The cap substrate is then placed on the sensor substrate, whereby the front side of the cap substrate including the plurality of openings is directed toward the sensor substrate. A portion of the cap substrate is removed from its back side by back-thinning using a grinding process or another semiconductor process. The removal of the cap substrate material from the back side creates access to the openings.

    摘要翻译： 一种用于制造微机械部件和微机械部件的方法。 微机械部件包括位于其上的传感器基板和盖。 为了形成盖，在微孔形式的前侧表面上的限定区域中将多个开口引入盖基板。 开口终止在盖基板中，即它们不会一直穿过盖基板，因此是浅的。 然后将盖基板放置在传感器基板上，由此包括多个开口的盖基板的前侧指向传感器基板。 通过使用研磨工艺或另一种半导体工艺通过背部薄化将帽基材的一部分从其背面去除。 盖背衬材料从背面去除导致开口的进入。

    Method for etched cavity devices
    7.
    发明授权
    Method for etched cavity devices 有权
    蚀刻腔体装置的方法

    公开(公告)号：US08709848B2

    公开(公告)日：2014-04-29

    申请号：US13088100

    申请日：2011-04-15

    申请人： Srivatsa G. Kundalgurki ,  Scott Dye

    发明人： Srivatsa G. Kundalgurki ,  Scott Dye

    IPC分类号： H01L21/02 ,  H01L21/3065

    CPC分类号： G01L9/0042 ,  B81C1/00047 ,  B81C2201/0123 ,  B81C2201/0146 ,  B81C2201/017 ,  H01L21/02057 ,  H01L21/30608 ,  H01L21/3065

    摘要： MEMS devices (40) using etched cavities (42) are desirably formed using multiple etching steps. Preliminary cavities (20) formed by locally anisotropic etching to nearly the final depth have irregular (46) sidewalls (44) and steep and/or inconsistent sidewall (44) to bottom (54) intersection angles (48). This leads to less than desired cavity diaphragm (26) burst strengths. Final cavities (42) with smooth sidewalls (50), smaller and consistent sidewall (50) to bottom (54) intersection angles (58), and having more than doubled cavity diaphragm (26) burst strengths are obtained by treating the preliminary cavities (20) with TMAH etchant, preferably relatively dilute TMAH etchant. In a preferred embodiment, a cleaning step is performed between the etching step and the TMAH treatment step to remove any anisotropic etching by-products present on the preliminary cavities' (20) initial sidewalls (44). The multi-step cavity etching procedure is especially useful for forming robust MEMS pressure sensors, but is applicable to any type of MEMS device.

    摘要翻译： 期望使用多个蚀刻步骤形成使用蚀刻腔（42）的MEMS器件（40）。 通过局部各向异性腐蚀形成的接近最终深度的初级腔（20）具有不规则的（46）侧壁（44）和陡峭和/或不一致的侧壁（44）至底部（54）交叉角（48）。 这导致比所需的腔膜（26）突发强度小。 通过处理预备空腔（2）获得具有平滑侧壁（50），更小且一致的侧壁（50）到底部（54）交叉角（58）并且具有多于两倍的腔隔膜（26）的突出强度的最终腔（42） 20）与TMAH蚀刻剂，优选相对稀释的TMAH蚀刻剂。 在优选的实施方案中，在蚀刻步骤和TMAH处理步骤之间进行清洁步骤以去除预备空腔（20）初始侧壁（44）上存在的任何各向异性蚀刻副产物。 多阶腔蚀刻程序对于形成坚固的MEMS压力传感器尤其有用，但适用于任何类型的MEMS器件。

    System and method for filling vias
    8.
    发明申请
    System and method for filling vias 有权
    填充通孔的系统和方法

    公开(公告)号：US20080150150A1

    公开(公告)日：2008-06-26

    申请号：US11642904

    申请日：2006-12-20

    申请人： Mark Andrew Franklin ,  Georgina Marie Jabbour ,  James Carl Baker

    发明人： Mark Andrew Franklin ,  Georgina Marie Jabbour ,  James Carl Baker

    IPC分类号： H01L23/52 ,  H01L21/4763

    CPC分类号： B81C1/00611 ,  B81B2203/0353 ,  B81B2207/07 ,  B81C2201/0123 ,  H01L23/5226 ,  H01L2924/0002 ,  Y10S438/947 ,  H01L2924/00

    摘要： System and method for filling vias in integrated circuits A preferred embodiment comprises forming a spacer layer on a substrate, forming a via with walls and a bottom in the spacer layer, depositing a conformal conductive layer on the spacer layer and on the walls and bottom of the via, spinning-on a photo-definable material on the conductive layer, forming a fill layer on the conductive layer and filling the via, exposing portions of the fill layer to an exposing light using a photomask, developing the fill layer to remove select portions of the fill layer and leave a portion of the fill layer filling the via, and removing the spacer layer. The use of a spin-on photo-definable material increases the material's filling and planarizing capabilities, while enabling a reduction in the number of process steps, which may reduce the likelihood of manufacturing defects, thereby increasing manufacturing yield.

    摘要翻译： 用于在集成电路中填充过孔的系统和方法优选实施例包括在衬底上形成间隔层，在间隔层中形成具有壁和底部的通孔，在间隔层上以及在隔离层的壁和底部上沉积共形导电层 所述通孔在所述导电层上旋转可光学定义的材料，在所述导电层上形成填充层并填充所述通孔，使用光掩模将所述填充层的部分暴露于曝光光，显影所述填充层以除去选择 填充层的部分并留下填充层的填充层的一部分，并且去除间隔层。 使用旋涂光可定义材料增加了材料的填充和平面化能力，同时能够减少工艺步骤的数量，这可能降低制造缺陷的可能性，从而提高制造产量。

    Manufacturing method
    9.
    发明申请
    Manufacturing method 审中-公开
    制造方法

    公开(公告)号：US20060046497A1

    公开(公告)日：2006-03-02

    申请号：US11210117

    申请日：2005-08-24

    申请人： Nobukazu Teranishi

    发明人： Nobukazu Teranishi

    IPC分类号： H01L21/302 ,  G03C5/00 ,  H01L21/311

    CPC分类号： B81C1/00611 ,  B81C2201/0123

    摘要： A manufacturing method according to which surface unevenness of a workpiece on which microprocessing is performed such as a semiconductor substrate or a micromachine is readily flattened with a higher degree of flatness than the prior art even when depressions vary in depth, to thus facilitate the processing of the surface in a subsequent process. The manufacturing method includes the processes of applying a photosensitive resin 2 over the surface of a workpiece 1, exposing the applied resin using a grayscale mask 3 that corresponds to the surface shape of the resin, and developing the exposed resin and eliminating unhardened resin.

    摘要翻译： 一种制造方法，即使当凹陷在深度上变化时，其上执行微处理的工件的表面不均匀性如现有技术那样容易地以比现有技术更高的平坦度平坦化，从而便于加工 在后续过程中的表面。 制造方法包括在工件1的表面上涂布感光性树脂2的工序，使用与树脂的表面形状相对应的灰度掩模3曝光所施加的树脂，并显影露出的树脂并除去未硬化的树脂。