公开(公告)号：US20230375927A1

公开(公告)日：2023-11-23

申请号：US18307454

申请日：2023-04-26

Applicant: Inha University Research and Business Foundation

Inventor： Jinkyun LEE ,  Yejin KU ,  Gayoung KIM

IPC: G03F7/038 ,  G03F7/004 ,  G03F7/11 ,  H01L21/027 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/308

CPC classification number: G03F7/0387 ,  G03F7/0043 ,  G03F7/11 ,  H01L21/0275 ,  H01L21/31144 ,  H01L21/32139 ,  H01L21/3081 ,  H01L21/3088 ,  H01L21/3086 ,  H01L21/3085

Abstract: Provided is an underlayer compound, which improves the resolution and sensitivity of a photoresist layer, restrains the collapse of a photoresist pattern and has improved etching resistance. The underlayer compound includes an alternating copolymer including a repeating unit represented by Formula 1, or an alkylated tin oxide nanocluster having a counter anion.

公开(公告)号：US20240255849A1

公开(公告)日：2024-08-01

申请号：US18463646

申请日：2023-09-08

Applicant: Inha University Research and Business Foundation

Inventor： Jinkyun LEE ,  Gayoung KIM ,  Yejin KU

IPC: G03F7/004 ,  C07C41/09 ,  C07F7/18 ,  H01L21/027

CPC classification number: G03F7/0045 ,  C07C41/09 ,  C07F7/1804 ,  C07F7/1888 ,  H01L21/0274

Abstract: Provided are a resist compound for photolithography, a method for forming the same, and a method for manufacturing a semiconductor device using the same. The resist compound is represented by Formula 1.

公开(公告)号：US20230375932A1

公开(公告)日：2023-11-23

申请号：US18307461

申请日：2023-04-26

Applicant: Inha University Research and Business Foundation

Inventor： Jinkyun LEE ,  Yejin KU ,  Hyungju AHN

IPC: G03F7/11 ,  G03F7/004 ,  H01L21/027 ,  H01L21/311 ,  H01L21/308 ,  G03F7/20 ,  G03F7/32

CPC classification number: G03F7/11 ,  G03F7/0043 ,  H01L21/0274 ,  H01L21/31144 ,  H01L21/3081 ,  H01L21/3085 ,  H01L21/3086 ,  H01L21/3088 ,  G03F7/2004 ,  G03F7/32 ,  H01L21/32139

Abstract: Provided are a resist compound and an underlayer compound, which may improve the resolution and sensitivity of a resist pattern and restrain the collapse of the resist pattern. The underlayer compound includes a cellulose structure having at least one hydroxyl group (—OH) and at least one vinyl silyl group. The resist compound includes an alkylated metal oxide nanocluster having a counter anion.

公开(公告)号：US20240295818A1

公开(公告)日：2024-09-05

申请号：US18434032

申请日：2024-02-06

Applicant: Inha University Research and Business Foundation

Inventor： Jinkyun LEE ,  Yejin KU ,  Min Seung KIM

IPC: G03F7/11 ,  G03F7/004 ,  G03F7/16 ,  G03F7/20 ,  G03F7/32 ,  H01L21/027

CPC classification number: G03F7/11 ,  G03F7/0042 ,  G03F7/162 ,  G03F7/167 ,  G03F7/2004 ,  G03F7/2059 ,  G03F7/325 ,  H01L21/0274

Abstract: Provided is an underlayer which may improve the resolution and sensitivity of a resist film, suppress the collapse of a resist pattern and have improved etching resistance. The underlayer includes a crosslinked material of tin-oxo nanoclusters represented by Formula 1.


[(R—Sn)12O14(OH)6]2+[Rx−]2  [Formula 1]

In Formula 1, R is an alkyl group of 1 to 20 carbon atoms, and Rx− is a counter anion and an alkylbenzene sulfonate anion.

公开(公告)号：US20220137511A1

公开(公告)日：2022-05-05

申请号：US17515949

申请日：2021-11-01

Applicant: Inha University Research and Business Foundation

Inventor： Jinkyun LEE ,  Yejin KU ,  Hyuntaek OH

IPC: G03F7/038 ,  G03F7/004 ,  G03F7/039 ,  G03F7/20 ,  G03F7/32

Abstract: Provided are a resist composition and a method of forming a pattern using the same. According to the inventive concept, the resist composition may include a copolymer represented by Formula 1 below.