公开(公告)号：US20250034365A1

公开(公告)日：2025-01-30

申请号：US18709264

申请日：2022-11-10

Applicant: LG ELECTRONICS INC. ,  INHA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION

Inventor： Junseok LEE ,  Dongjoo YOU ,  Jeayoul JOUNG ,  Seongmoon CHO ,  Jinkyun LEE ,  Seungsoo CHOI ,  Minkyu CHOI

IPC: C08K9/08 ,  B29C43/22 ,  C08F292/00 ,  C08J5/18

Abstract: The present embodiment provides a composite film in which a plurality of composite inorganic particles, which are inorganic particles having a fluoropolymer coating film formed therein, are sintered to form a plane shape. Therefore, the low dielectric inorganic particle composite film may reduce signal loss by being hybridized with an interlayer insulator in a high-frequency 5G area. The low dielectric inorganic particles may minimize transmission loss by enhancing dielectric properties when applied to a 5G smartphone substrate and an IF cable, since the composite film used as an interlayer insulator for a communication substrate material comprises only the inorganic particles. In addition, application of the low dielectric inorganic particles may be expanded to vehicles, construction, and IoT products which will use 5G communication in the future.

公开(公告)号：US20230375927A1

公开(公告)日：2023-11-23

申请号：US18307454

申请日：2023-04-26

Applicant: Inha University Research and Business Foundation

Inventor： Jinkyun LEE ,  Yejin KU ,  Gayoung KIM

IPC: G03F7/038 ,  G03F7/004 ,  G03F7/11 ,  H01L21/027 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/308

CPC classification number: G03F7/0387 ,  G03F7/0043 ,  G03F7/11 ,  H01L21/0275 ,  H01L21/31144 ,  H01L21/32139 ,  H01L21/3081 ,  H01L21/3088 ,  H01L21/3086 ,  H01L21/3085

Abstract: Provided is an underlayer compound, which improves the resolution and sensitivity of a photoresist layer, restrains the collapse of a photoresist pattern and has improved etching resistance. The underlayer compound includes an alternating copolymer including a repeating unit represented by Formula 1, or an alkylated tin oxide nanocluster having a counter anion.

公开(公告)号：US20240255849A1

公开(公告)日：2024-08-01

申请号：US18463646

申请日：2023-09-08

Applicant: Inha University Research and Business Foundation

Inventor： Jinkyun LEE ,  Gayoung KIM ,  Yejin KU

IPC: G03F7/004 ,  C07C41/09 ,  C07F7/18 ,  H01L21/027

CPC classification number: G03F7/0045 ,  C07C41/09 ,  C07F7/1804 ,  C07F7/1888 ,  H01L21/0274

Abstract: Provided are a resist compound for photolithography, a method for forming the same, and a method for manufacturing a semiconductor device using the same. The resist compound is represented by Formula 1.

公开(公告)号：US20230375932A1

公开(公告)日：2023-11-23

申请号：US18307461

申请日：2023-04-26

Applicant: Inha University Research and Business Foundation

Inventor： Jinkyun LEE ,  Yejin KU ,  Hyungju AHN

IPC: G03F7/11 ,  G03F7/004 ,  H01L21/027 ,  H01L21/311 ,  H01L21/308 ,  G03F7/20 ,  G03F7/32

CPC classification number: G03F7/11 ,  G03F7/0043 ,  H01L21/0274 ,  H01L21/31144 ,  H01L21/3081 ,  H01L21/3085 ,  H01L21/3086 ,  H01L21/3088 ,  G03F7/2004 ,  G03F7/32 ,  H01L21/32139

Abstract: Provided are a resist compound and an underlayer compound, which may improve the resolution and sensitivity of a resist pattern and restrain the collapse of the resist pattern. The underlayer compound includes a cellulose structure having at least one hydroxyl group (—OH) and at least one vinyl silyl group. The resist compound includes an alkylated metal oxide nanocluster having a counter anion.

公开(公告)号：US20230257580A1

公开(公告)日：2023-08-17

申请号：US18012525

申请日：2020-06-23

Applicant: LG ELECTRONICS INC. ,  INHA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION

Inventor： Junseok LEE ,  Dongjoo YOU ,  Seongmoon CHO ,  Jinkyun LEE ,  Sejin LEE

IPC: C08L79/08 ,  C08K3/36 ,  C08K5/5415 ,  C08K7/26 ,  C08K9/06

CPC classification number: C08L79/08 ,  C08K3/36 ,  C08K5/5415 ,  C08K7/26 ,  C08K9/06

Abstract: The present disclosure relates to polyimide and a preparation method thereof. The polyimide according to an embodiment of the present disclosure comprises: silica having pores; and a fluorinated alkyl chain attached to the surface of the silica having pores, and is prepared by mixing a dispersion solution comprising the silica having pores and an organic solution comprising a polyimide precursor. Accordingly, hygroscopicity is reduced, and dispersibility can be enhanced.

公开(公告)号：US20240295818A1

公开(公告)日：2024-09-05

申请号：US18434032

申请日：2024-02-06

Applicant: Inha University Research and Business Foundation

Inventor： Jinkyun LEE ,  Yejin KU ,  Min Seung KIM

IPC: G03F7/11 ,  G03F7/004 ,  G03F7/16 ,  G03F7/20 ,  G03F7/32 ,  H01L21/027

CPC classification number: G03F7/11 ,  G03F7/0042 ,  G03F7/162 ,  G03F7/167 ,  G03F7/2004 ,  G03F7/2059 ,  G03F7/325 ,  H01L21/0274

Abstract: Provided is an underlayer which may improve the resolution and sensitivity of a resist film, suppress the collapse of a resist pattern and have improved etching resistance. The underlayer includes a crosslinked material of tin-oxo nanoclusters represented by Formula 1.


[(R—Sn)12O14(OH)6]2+[Rx−]2  [Formula 1]

In Formula 1, R is an alkyl group of 1 to 20 carbon atoms, and Rx− is a counter anion and an alkylbenzene sulfonate anion.

公开(公告)号：US20220137511A1

公开(公告)日：2022-05-05

申请号：US17515949

申请日：2021-11-01

Applicant: Inha University Research and Business Foundation

Inventor： Jinkyun LEE ,  Yejin KU ,  Hyuntaek OH

IPC: G03F7/038 ,  G03F7/004 ,  G03F7/039 ,  G03F7/20 ,  G03F7/32

Abstract: Provided are a resist composition and a method of forming a pattern using the same. According to the inventive concept, the resist composition may include a copolymer represented by Formula 1 below.