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1.发明申请公开(公告)号：US20180366914A1
公开(公告)日：2018-12-20
申请号：US15627291
申请日：2017-06-19
申请人： Intel Corporation
发明人： Pierre Doussiere
CPC分类号： H01S5/34313 , H01S5/2054 , H01S5/3403 , H01S5/34306 , H01S5/3434 , H01S5/34366
摘要： Embodiments may relate to a multiple quantum well (MQW) laser for operating at high temperatures, comprising at least one quantum well made of compressively strained InGaAlAs layers that are alternatively stacked with tensile strained InGaAlAs layers, the at least one quantum well surrounded on one side by a n-doped InP cladding and on the other by a p-doped InP cladding so as to form a double hetero-junction. A confinement layer of lattice-matched InAlAs may be provided between the quantum well and the p-doped cladding, having a first surface facing or adjacent to the quantum well and a second surface facing or adjacent to the p-doped cladding. An additional electron containment layer of tensile strained InAlAs may be provided facing or adjacent to one surface of the confinement layer, having a thickness smaller than that of the confinement layer. Other embodiments may be described and/or claimed.
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公开(公告)号：US20180183211A1
公开(公告)日：2018-06-28
申请号：US15392875
申请日：2016-12-28
申请人： INTEL CORPORATION
CPC分类号： H01S5/22 , H01S5/021 , H01S5/026 , H01S5/0425 , H01S5/1039 , H01S5/12 , H01S5/2222
摘要： Embodiments of the present disclosure may relate to a hybrid silicon distributed feed-back (DFB) laser, wherein light is to propagate through the DFB laser along a length of the DFB laser. The DFB laser may include a mesa with a current channel that extends from the first side of the mesa to the second side of the mesa. At a first location along the length of the DFB laser, the current channel may have a first width and/or the mesa may have a second width. At a second location along the length of the DFB laser, the current channel may have a third width and/or the mesa may have a fourth width as measured in a direction perpendicular to the length of the DFB laser. Other embodiments may be described and/or claimed.
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公开(公告)号：US10833481B2
公开(公告)日：2020-11-10
申请号：US16235684
申请日：2018-12-28
申请人： Intel Corporation
IPC分类号： H01S5/34 , H01S5/343 , H01S5/20 , H04B10/40 , H01S5/10 , H01S5/223 , H01S5/042 , H01S5/40 , H01S5/022 , H01S5/02 , H01S5/00
摘要： Embodiments of the present disclosure are directed towards a laser device with a stepped graded index separate confinement heterostructure (SCH), in accordance with some embodiments. One embodiment includes a substrate area, and an active region adjacent to the substrate area. The active region includes an SCH layer, which comprises a first portion and a second portion adjacent to the first portion. A composition of the first portion is graded to provide a first conduction band energy increase over a distance from multiple quantum wells (MQW) to a p-side of a laser device junction. A composition of the second portion is graded to provide a second conduction band energy increase over the MQW to the p-side distance. The first conduction band energy increase is different than the second conduction band energy increase. Other embodiments may be described and/or claimed.
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公开(公告)号：US10008828B1
公开(公告)日：2018-06-26
申请号：US15392875
申请日：2016-12-28
申请人： INTEL CORPORATION
摘要： Embodiments of the present disclosure may relate to a hybrid silicon distributed feed-back (DFB) laser, wherein light is to propagate through the DFB laser along a length of the DFB laser. The DFB laser may include a mesa with a current channel that extends from the first side of the mesa to the second side of the mesa. At a first location along the length of the DFB laser, the current channel may have a first width and/or the mesa may have a second width. At a second location along the length of the DFB laser, the current channel may have a third width and/or the mesa may have a fourth width as measured in a direction perpendicular to the length of the DFB laser. Other embodiments may be described and/or claimed.
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公开(公告)号：US11217964B2
公开(公告)日：2022-01-04
申请号：US16236211
申请日：2018-12-28
申请人： Intel Corporation
IPC分类号： H01S5/02 , H01S5/065 , H04J14/02 , H04B10/25 , H01S5/40 , G02B6/122 , H01S5/0683 , H04B10/50 , G02B6/42 , G02B6/12
摘要： There is disclosed in one example a fiberoptic communication device, including: a modulator to modulate data onto a laser pulse; and a semiconductor laser source including an active optical waveguide to provide optical gain and support an optical mode, the laser source further including a V-shaped current channel superimposed on the optical waveguide, and disposed to feed the active optical waveguide with electrical current along its length, the current channel having a proximate end to the optical mode, the proximate end having a width substantially matching a diameter of the optical mode, and a removed end from the optical mode, wherein the removed end is substantially wider than the proximate end.
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公开(公告)号：US10193308B2
公开(公告)日：2019-01-29
申请号：US15627291
申请日：2017-06-19
申请人： Intel Corporation
发明人： Pierre Doussiere
摘要： Embodiments may relate to a multiple quantum well (MQW) laser for operating at high temperatures, comprising at least one quantum well made of compressively strained InGaAlAs layers that are alternatively stacked with tensile strained InGaAlAs layers, the at least one quantum well surrounded on one side by a n-doped InP cladding and on the other by a p-doped InP cladding so as to form a double hetero-junction. A confinement layer of lattice-matched InAlAs may be provided between the quantum well and the p-doped cladding, having a first surface facing or adjacent to the quantum well and a second surface facing or adjacent to the p-doped cladding. An additional electron containment layer of tensile strained InAlAs may be provided facing or adjacent to one surface of the confinement layer, having a thickness smaller than that of the confinement layer. Other embodiments may be described and/or claimed.
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