公开(公告)号：US10122089B2

公开(公告)日：2018-11-06

申请号：US15206428

申请日：2016-07-11

Applicant: Intel Corporation

Inventor： Vijay K. Nair ,  Chuan Hu ,  Shawna M. Liff ,  Larry E. Mosley

IPC: H01Q7/00 ,  H01Q7/06 ,  H01Q1/22 ,  G06F1/16 ,  H01F1/00 ,  H01Q23/00 ,  H01L21/56 ,  H01L23/00 ,  H01L23/29 ,  H01L23/66 ,  H01L23/31

Abstract: A method apparatus and material are described for radio frequency passives and antennas. In one example, an electronic component has a synthesized magnetic nanocomposite material with aligned magnetic domains, a conductor embedded within the nanocomposite material, and contact pads extending through the nanocomposite material to connect to the conductor.

公开(公告)号：US20160322707A1

公开(公告)日：2016-11-03

申请号：US15206428

申请日：2016-07-11

Applicant: Intel Corporation

Inventor： Vijay K. Nair ,  Chuan Hu ,  Shawna M. Liff ,  Larry E. Mosley

IPC: H01Q7/06 ,  H01L23/66 ,  H01L21/56 ,  H01L23/31 ,  H01L23/00 ,  H01Q1/22 ,  H01L23/29

CPC classification number: H01Q7/06 ,  G06F1/16 ,  H01F1/0054 ,  H01L21/565 ,  H01L21/568 ,  H01L23/295 ,  H01L23/3121 ,  H01L23/3128 ,  H01L23/66 ,  H01L24/17 ,  H01L24/19 ,  H01L24/96 ,  H01L2223/6672 ,  H01L2223/6677 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/24137 ,  H01L2224/24195 ,  H01L2924/01029 ,  H01L2924/05442 ,  H01L2924/12042 ,  H01L2924/1421 ,  H01L2924/15311 ,  H01L2924/15321 ,  H01L2924/181 ,  H01L2924/186 ,  H01L2924/19011 ,  H01L2924/19042 ,  H01L2924/19102 ,  H01L2924/19105 ,  H01Q1/2283 ,  H01Q1/2291 ,  H01Q23/00 ,  H01L2924/00

Abstract: A method apparatus and material are described for radio frequency passives and antennas. In one example, an electronic component has a synthesized magnetic nanocomposite material with aligned magnetic domains, a conductor embedded within the nanocomposite material, and contact pads extending through the nanocomposite material to connect to the conductor.

Abstract translation: 无线电频率无源和天线描述了一种方法装置和材料。 在一个示例中，电子部件具有具有对准磁畴的合成磁性纳米复合材料，嵌入在纳米复合材料内的导体以及延伸穿过纳米复合材料以连接到导体的接触垫。

公开(公告)号：US09466662B2

公开(公告)日：2016-10-11

申请号：US13730308

申请日：2012-12-28

Applicant: Intel Corporation

Inventor： Donald S. Gardner ,  Larry E. Mosley

IPC: H01L21/02 ,  H01L49/02

CPC classification number: H01L28/90

Abstract: In one embodiment, an energy storage device (e.g., capacitor) may include a porous silicon layer formed within a substrate. The porous silicon layer includes pores with a mean pore diameter less than approximately 100 nanometers. A first conductive layer is formed on the porous silicon layer and a first dielectric layer is formed on the first conductive layer. A second conductive layer is formed on the first dielectric layer to form the capacitor.

Abstract translation: 在一个实施例中，能量存储装置（例如，电容器）可以包括在衬底内形成的多孔硅层。 多孔硅层包括平均孔径小于约100纳米的孔。 第一导电层形成在多孔硅层上，第一介电层形成在第一导电层上。 在第一介电层上形成第二导电层以形成电容器。

公开(公告)号：US10483249B2

公开(公告)日：2019-11-19

申请号：US16060658

申请日：2015-12-26

Applicant: Intel Corporation

Inventor： Donald S. Gardner ,  Edward A. Burton ,  Gerhard Schrom ,  Larry E. Mosley

IPC: H01L25/16 ,  H01L25/07 ,  H01L23/498 ,  H01L23/00 ,  H01L49/02 ,  H01L21/50 ,  H01L29/20

Abstract: Embodiments are generally directed to integrated passive devices on chip. An embodiment of a device includes a semiconductor die; a semiconductor die package, a first side of the package being coupled with the semiconductor die; and one or more separate dies to provide passive components for operation of the semiconductor die, wherein the passive components for operation of the semiconductor die includes inductors.