公开(公告)号：US20220415814A1

公开(公告)日：2022-12-29

申请号：US17355763

申请日：2021-06-23

Applicant: Intel Corporation

Inventor： Bernd Waidhas ,  Carlton Hanna ,  Stephen Morein ,  Lizabeth Keser ,  Georg Seidemann

IPC: H01L23/538 ,  H01L25/16 ,  H05K1/18 ,  H01L25/065 ,  H01L25/18 ,  H01L23/00 ,  H01L23/367 ,  H01L25/00 ,  H01L23/48

Abstract: Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a package substrate including a first conductive pathway electrically coupled to a power source; a first microelectronic component embedded in an insulating material on the surface of the package substrate and including a TSV electrically coupled to the first conductive pathway; a redistribution layer (RDL) on the insulating material including a second conductive pathway electrically coupled to the TSV; and a second microelectronic component on the RDL and electrically coupled to the second conductive pathway, wherein the second conductive pathway electrically couples the TSV, the second microelectronic component, and the first microelectronic component.

公开(公告)号：US11508637B2

公开(公告)日：2022-11-22

申请号：US16855418

申请日：2020-04-22

Applicant: Intel Corporation

Inventor： Lizabeth Keser ,  Thomas Ort ,  Thomas Wagner ,  Bernd Waidhas

IPC: H01L23/31 ,  H01L21/48 ,  H01L21/56 ,  H01L21/78 ,  H01L21/66 ,  H01L23/538 ,  H01L23/00

Abstract: A semiconductor device and method is disclosed. Devices shown include a die coupled to an integrated routing layer, wherein the integrated routing layer includes a first width that is wider than the die. Devices shown further included a molded routing layer coupled to the integrated routing layer.

公开(公告)号：US11211337B2

公开(公告)日：2021-12-28

申请号：US16703315

申请日：2019-12-04

Applicant: Intel Corporation

Inventor： Lizabeth Keser ,  Thomas Ort ,  Thomas Wagner ,  Bernd Waidhas

IPC: H01L23/538 ,  H01L21/56 ,  H01L23/00 ,  H01L21/683 ,  H01L25/16 ,  H01L25/00 ,  H01L23/498

Abstract: A face-up fan-out electronic package including at least one passive component located on a support. The electronic package can include a die. The die can include a plurality of conductive pillars having a proximal end communicatively coupled to the first side of the die and a distal end opposite the proximal end. A mold can at least partially surround the die. The mold can include a first surface that is coplanar with the distal end of the conductive pillars and a second surface opposing the first surface. In an example, the passive component can include a body and a lead. The passive component can be located within the mold. The lead can be coplanar with the first surface, and the body can be located at a distance from the second surface. The support can be located between the body and the second surface.

公开(公告)号：US12243828B2

公开(公告)日：2025-03-04

申请号：US17355770

申请日：2021-06-23

Applicant: Intel Corporation

Inventor： Bernd Waidhas ,  Carlton Hanna ,  Stephen Morein ,  Lizabeth Keser ,  Georg Seidemann

IPC: H01L23/538 ,  H01L23/00 ,  H01L23/367 ,  H01L23/48 ,  H01L25/00 ,  H01L25/065 ,  H01L25/16 ,  H01L25/18 ,  H05K1/18

Abstract: Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a package substrate including a first conductive pathway electrically coupled to a power source; a mold material on the package substrate including a first microelectronic component embedded in the mold material, a second microelectronic component embedded in the mold material, and a TMV, between the first and second microelectronic components, the TMV electrically coupled to the first conductive pathway; a redistribution layer (RDL) on the mold material including a second conductive pathway electrically coupled to the TMV; and a third microelectronic component on the RDL and electrically coupled to the second conductive pathway, wherein the second conductive pathway electrically couples the TMV, the first microelectronic component, and the third microelectronic component.

公开(公告)号：US20230317620A1

公开(公告)日：2023-10-05

申请号：US17708746

申请日：2022-03-30

Applicant: Intel Corporation

Inventor： Carlton Hanna ,  Georg Seidemann ,  Eduardo De Mesa ,  Abdallah Bacha ,  Lizabeth Keser

IPC: H01L23/538 ,  H01L23/15 ,  H01L25/065 ,  H01L21/48

CPC classification number: H01L23/5383 ,  H01L23/15 ,  H01L24/16 ,  H01L21/4857 ,  H01L25/0655

Abstract: Various embodiments disclosed relate to a semiconductor assembly having a ceramic or glass interposer for connecting dies within a semiconductor package. The present disclosure includes a ceramic or glass interposer having a carrier layer of substantially glass or ceramic material and a connecting layer having at least one dielectric layer and electrical routing therein.

公开(公告)号：US20230317582A1

公开(公告)日：2023-10-05

申请号：US17707183

申请日：2022-03-29

Applicant: Intel Corporation

Inventor： Carlton Hanna ,  Georg Seidemann ,  Eduardo De Mesa ,  Abdallah Bacha ,  Lizabeth Keser

IPC: H01L23/498 ,  H01L25/065 ,  H01L23/14 ,  H01L21/48 ,  H01L23/48

CPC classification number: H01L23/49822 ,  H01L23/49816 ,  H01L25/0655 ,  H01L23/145 ,  H01L23/5381 ,  H01L21/486 ,  H01L23/481 ,  H01L23/49838 ,  H01L2924/3511 ,  H01L21/4857

Abstract: An electronic device comprises a first redistribution layer (RDL) including multiple sublayers of conductive traces formed in an organic material; a stiffening layer including one of a ceramic or glass, the stiffening layer including a first surface contacting a first surface of the first RDL and including a through layer via (TLV); and multiple integrated circuit (ICs) arranged on a second surface of the first RDL and including bonding pads, wherein the conductive traces of the first RDL provide electrical continuity between at least one bonding pad of the ICs and at least one TLV of the stiffening layer.

公开(公告)号：US20230090265A1

公开(公告)日：2023-03-23

申请号：US17991503

申请日：2022-11-21

Applicant: Intel Corporation

Inventor： Lizabeth Keser ,  Thomas Ort ,  Thomas Wagner ,  Bernd Waidhas

IPC: H01L23/31 ,  H01L21/48 ,  H01L21/56 ,  H01L21/78 ,  H01L21/66 ,  H01L23/538 ,  H01L23/00

Abstract: A semiconductor device and method is disclosed. Devices shown include a die coupled to an integrated routing layer, wherein the integrated routing layer includes a first width that is wider than the die. Devices shown further included a molded routing layer coupled to the integrated routing layer.

公开(公告)号：US20220415815A1

公开(公告)日：2022-12-29

申请号：US17355770

申请日：2021-06-23

Applicant: Intel Corporation

Inventor： Bernd Waidhas ,  Carlton Hanna ,  Stephen Morein ,  Lizabeth Keser ,  Georg Seidemann

IPC: H01L23/538 ,  H01L23/48 ,  H01L23/00 ,  H01L25/16 ,  H05K1/18 ,  H01L25/065 ,  H01L25/18 ,  H01L23/367 ,  H01L25/00

Abstract: Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a package substrate including a first conductive pathway electrically coupled to a power source; a mold material on the package substrate including a first microelectronic component embedded in the mold material, a second microelectronic component embedded in the mold material, and a TMV, between the first and second microelectronic components, the TMV electrically coupled to the first conductive pathway; a redistribution layer (RDL) on the mold material including a second conductive pathway electrically coupled to the TMV; and a third microelectronic component on the RDL and electrically coupled to the second conductive pathway, wherein the second conductive pathway electrically couples the TMV, the first microelectronic component, and the third microelectronic component.

公开(公告)号：US20250157941A1

公开(公告)日：2025-05-15

申请号：US19025226

申请日：2025-01-16

Applicant: Intel Corporation

Inventor： Bernd Waidhas ,  Carlton Hanna ,  Stephen Morein ,  Lizabeth Keser ,  Georg Seidemann

IPC: H01L23/538 ,  H01L23/00 ,  H01L23/367 ,  H01L23/48 ,  H01L25/00 ,  H01L25/065 ,  H01L25/16 ,  H01L25/18 ,  H05K1/18

Abstract: Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a package substrate including a first conductive pathway; a mold material on the package substrate including a first microelectronic component embedded in the mold material, a second microelectronic component embedded in the mold material, and a TMV, between the first and second microelectronic components, the TMV electrically coupled to the first conductive pathway; a redistribution layer (RDL) on the mold material including a second conductive pathway electrically coupled to the TMV; and a third microelectronic component on the RDL and electrically coupled to the second conductive pathway, wherein the second conductive pathway electrically couples the TMV, the first microelectronic component, and the third microelectronic component.

公开(公告)号：US20240355697A1

公开(公告)日：2024-10-24

申请号：US18762478

申请日：2024-07-02

Applicant: Intel Corporation

Inventor： Lizabeth Keser ,  Thomas Ort ,  Thomas Wagner ,  Bernd Waidhas

IPC: H01L23/31 ,  H01L21/48 ,  H01L21/56 ,  H01L21/66 ,  H01L21/78 ,  H01L23/00 ,  H01L23/538

CPC classification number: H01L23/3192 ,  H01L21/4853 ,  H01L21/4857 ,  H01L21/561 ,  H01L21/565 ,  H01L21/568 ,  H01L21/78 ,  H01L22/14 ,  H01L23/3114 ,  H01L23/5383 ,  H01L23/5386 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/20 ,  H01L24/96 ,  H01L23/3128 ,  H01L2224/18 ,  H01L2224/214 ,  H01L2224/95001

Abstract: A semiconductor device and method is disclosed. Devices shown include a die coupled to an integrated routing layer, wherein the integrated routing layer includes a first width that is wider than the die. Devices shown further included a molded routing layer coupled to the integrated routing layer.