公开(公告)号：US20180033707A1

公开(公告)日：2018-02-01

申请号：US15549970

申请日：2015-03-09

Applicant: Intel Corporation

Inventor： Brandon C. MARIN ,  Trina GHOSH DASTIDAR ,  Dilan SENEVIRATNE ,  Yonggang LI ,  Sirisha CHAVA

IPC: H01L23/14 ,  H05K3/10 ,  H05K3/18 ,  H05K3/06

CPC classification number: H01L23/14 ,  H01L21/4846 ,  H01L23/145 ,  H01L23/49822 ,  H01L23/49866 ,  H01L2224/16227 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2924/15311 ,  H05K3/062 ,  H05K3/105 ,  H05K3/107 ,  H05K3/182 ,  H05K3/185 ,  H05K2201/0209 ,  H05K2203/107

Abstract: Embodiments of the present disclosure describe selective metallization of an integrated circuit (IC) substrate. In one embodiment, an integrated circuit (IC) substrate may include a dielectric material and metal crystals having a polyhedral shape dispersed in the dielectric material and bonded with a ligand that is to ablate when exposed to laser light such that the metal crystals having the ablated ligand are activated to provide a catalyst for selective electroless deposition of a metal. Other embodiments may be described and/or claimed