公开(公告)号：US20140363944A1

公开(公告)日：2014-12-11

申请号：US14333715

申请日：2014-07-17

Applicant: Intermolecular Inc. ,  GLOBALFOUNDRIES, Inc.

Inventor： Anh Duong ,  Clemens Fitz ,  Olov Karlsson

IPC: H01L21/02 ,  H01L29/49 ,  H01L21/324 ,  H01L29/66 ,  H01L21/28

CPC classification number: C11D11/0047 ,  C11D7/04 ,  C11D7/08 ,  C11D7/265 ,  H01L21/02057 ,  H01L21/02068 ,  H01L21/28052 ,  H01L21/324 ,  H01L21/6704 ,  H01L29/4975 ,  H01L29/66477 ,  H01L29/665 ,  H01L29/66568

Abstract: A method for cleaning residues from a semiconductor substrate during a nickel platinum silicidation process is disclosed, including a multi-step residue cleaning, including exposing the substrate to an aqua regia solution, followed by an exposure to a solution having hydrochloric acid and hydrogen peroxide. The SC2 solution can further react with remaining platinum residues, rendering it more soluble in an aqueous solution and thereby dissolving it from the surface of the substrate.

Abstract translation: 公开了一种在镍铂硅化过程中从半导体衬底中清除残余物的方法，包括多步残渣清洗，包括将底物暴露于王水溶液中，然后暴露于含有盐酸和过氧化氢的溶液中。 SC2溶液可以与剩余的铂残留物进一步反应，使其更易溶于水溶液，从而从基底表面溶解。

公开(公告)号：US20130323890A1

公开(公告)日：2013-12-05

申请号：US13953446

申请日：2013-07-29

Applicant: GLOBALFOUNDRIES, Inc. ,  Intermolecular Inc.

Inventor： Anh Duong ,  Clemens Fitz ,  Olov Karlsson

IPC: H01L21/02 ,  H01L29/66

CPC classification number: C11D11/0047 ,  C11D7/04 ,  C11D7/08 ,  C11D7/265 ,  H01L21/02057 ,  H01L21/02068 ,  H01L21/28052 ,  H01L21/324 ,  H01L21/6704 ,  H01L29/4975 ,  H01L29/66477 ,  H01L29/665 ,  H01L29/66568

Abstract: A method for cleaning residues from a semiconductor substrate during a nickel platinum silicidation process is disclosed, including a multi-step residue cleaning, including exposing the substrate to an aqua regia solution, followed by an exposure to a solution having hydrochloric acid and hydrogen peroxide. The SC2 solution can further react with remaining platinum residues, rendering it more soluble in an aqueous solution and thereby dissolving it from the surface of the substrate.

公开(公告)号：US20150105308A1

公开(公告)日：2015-04-16

申请号：US14574995

申请日：2014-12-18

Applicant: Intermolecular Inc. ,  GLOBALFOUNDRIES, Inc.

Inventor： Anh Duong ,  Clemens Fitz ,  Olov Karlsson

IPC: C11D11/00 ,  C11D7/04 ,  C11D7/08 ,  C11D7/26 ,  H01L21/67 ,  H01L21/02

CPC classification number: C11D11/0047 ,  C11D7/04 ,  C11D7/08 ,  C11D7/265 ,  H01L21/02057 ,  H01L21/02068 ,  H01L21/28052 ,  H01L21/324 ,  H01L21/6704 ,  H01L29/4975 ,  H01L29/66477 ,  H01L29/665 ,  H01L29/66568

Abstract: A method for cleaning residues from a semiconductor substrate during a nickel platinum silicidation process is disclosed, including a multi-step residue cleaning, including exposing the substrate to an aqua regia solution, followed by an exposure to a solution having hydrochloric acid and hydrogen peroxide. The SC2 solution can further react with remaining platinum residues, rendering it more soluble in an aqueous solution and thereby dissolving it from the surface of the substrate.

Abstract translation: 公开了一种在镍铂硅化过程中从半导体衬底中清除残余物的方法，包括多步残渣清洗，包括将底物暴露于王水溶液中，然后暴露于含有盐酸和过氧化氢的溶液中。 SC2溶液可以与剩余的铂残留物进一步反应，使其更易溶于水溶液，从而从基底表面溶解。

公开(公告)号：US08946015B2

公开(公告)日：2015-02-03

申请号：US14333715

申请日：2014-07-17

Applicant: Intermolecular Inc. ,  GLOBALFOUNDRIES, Inc.

Inventor： Anh Duong ,  Clemens Fitz ,  Olov Karlsson

IPC: H01L21/336 ,  H01L21/02 ,  H01L29/66 ,  H01L21/28 ,  H01L21/324 ,  H01L29/49

CPC classification number: C11D11/0047 ,  C11D7/04 ,  C11D7/08 ,  C11D7/265 ,  H01L21/02057 ,  H01L21/02068 ,  H01L21/28052 ,  H01L21/324 ,  H01L21/6704 ,  H01L29/4975 ,  H01L29/66477 ,  H01L29/665 ,  H01L29/66568

Abstract: A method for cleaning residues from a semiconductor substrate during a nickel platinum silicidation process is disclosed, including a multi-step residue cleaning, including exposing the substrate to an aqua regia solution, followed by an exposure to a solution having hydrochloric acid and hydrogen peroxide. The SC2 solution can further react with remaining platinum residues, rendering it more soluble in an aqueous solution and thereby dissolving it from the surface of the substrate.

Abstract translation: 公开了一种在镍铂硅化过程中从半导体衬底中清除残余物的方法，包括多步残渣清洗，包括将底物暴露于王水溶液中，然后暴露于含有盐酸和过氧化氢的溶液中。 SC2溶液可以与剩余的铂残留物进一步反应，使其更易溶于水溶液，从而从基底表面溶解。

公开(公告)号：US09399753B2

公开(公告)日：2016-07-26

申请号：US14574995

申请日：2014-12-18

Applicant: Intermolecular Inc. ,  GLOBALFOUNDRIES, Inc.

Inventor： Anh Duong ,  Clemens Fitz ,  Olov Karlsson

IPC: C11D11/00 ,  H01L29/66 ,  H01L21/02 ,  H01L21/28 ,  H01L21/324 ,  H01L29/49 ,  C11D7/04 ,  C11D7/08 ,  C11D7/26 ,  H01L21/67

CPC classification number: C11D11/0047 ,  C11D7/04 ,  C11D7/08 ,  C11D7/265 ,  H01L21/02057 ,  H01L21/02068 ,  H01L21/28052 ,  H01L21/324 ,  H01L21/6704 ,  H01L29/4975 ,  H01L29/66477 ,  H01L29/665 ,  H01L29/66568

Abstract: A method for cleaning residues from a semiconductor substrate during a nickel platinum silicidation process is disclosed, including a multi-step residue cleaning, including exposing the substrate to an aqua regia solution, followed by an exposure to a solution having hydrochloric acid and hydrogen peroxide. The SC2 solution can further react with remaining platinum residues, rendering it more soluble in an aqueous solution and thereby dissolving it from the surface of the substrate.

Abstract translation: 公开了一种在镍铂硅化过程中从半导体衬底中清除残余物的方法，包括多步残渣清洗，包括将底物暴露于王水溶液中，然后暴露于含有盐酸和过氧化氢的溶液中。 SC2溶液可以与剩余的铂残留物进一步反应，使其更易溶于水溶液，从而从基底表面溶解。

公开(公告)号：US20150017456A1

公开(公告)日：2015-01-15

申请号：US13941841

申请日：2013-07-15

Applicant: Intermolecular Inc.

Inventor： Anh Duong ,  Clemens Fitz

IPC: H01L21/3105 ,  H01L21/66

CPC classification number: H01L21/3105 ,  H01L21/02071 ,  H01L21/32134 ,  H01L22/12 ,  H01L22/26

Abstract: When an etchant for metal (e.g., HF) reaches an underlying silicon oxide layer, it may form silanol bonds or other hydrogen bonds that resist rinsing, so that some etchant remains to be trapped under the next deposited layer. Trapped etchant can create voids that eventually degrade the performance of the oxide layer. Exposing the surface to a liquid solution or gaseous precursor containing silane seals the defects without causing an overall thickness change. The silane reacts at sites with silanol (or other hydrogen) bonds, breaking the bonds and replacing the hydrogen with silicon, but does not react in the absence of a hydrogen bond.

Abstract translation: 当金属（例如HF）的蚀刻剂到达下面的氧化硅层时，它可以形成硅烷醇键或其它阻止冲洗的氢键，使得一些蚀刻剂仍然被捕获在下一沉积层下面。 捕获的蚀刻剂可能产生最终降低氧化物层性能的空隙。 将表面暴露于含有硅烷的液体溶液或气体前体将缺陷密封，而不会导致总的厚度变化。 硅烷在硅烷醇（或其他氢）键的位置处反应，破坏键并用硅代替氢，但在不存在氢键的情况下不反应。

公开(公告)号：US08809140B2

公开(公告)日：2014-08-19

申请号：US13953446

申请日：2013-07-29

Applicant: Intermolecular Inc. ,  GLOBALFOUNDRIES, Inc.

Inventor： Anh Duong ,  Clemens Fitz ,  Olov Karlsson

IPC: H01L21/336

CPC classification number: C11D11/0047 ,  C11D7/04 ,  C11D7/08 ,  C11D7/265 ,  H01L21/02057 ,  H01L21/02068 ,  H01L21/28052 ,  H01L21/324 ,  H01L21/6704 ,  H01L29/4975 ,  H01L29/66477 ,  H01L29/665 ,  H01L29/66568

Abstract: A method for cleaning residues from a semiconductor substrate during a nickel platinum silicidation process is disclosed, including a multi-step residue cleaning, including exposing the substrate to an aqua regia solution, followed by an exposure to a solution having hydrochloric acid and hydrogen peroxide. The SC2 solution can further react with remaining platinum residues, rendering it more soluble in an aqueous solution and thereby dissolving it from the surface of the substrate.

Abstract translation: 公开了一种在镍铂硅化过程中从半导体衬底中清除残余物的方法，包括多步残渣清洗，包括将底物暴露于王水溶液中，然后暴露于含有盐酸和过氧化氢的溶液中。 SC2溶液可以与剩余的铂残留物进一步反应，使其更易溶于水溶液，从而从基底表面溶解。