公开(公告)号：US09001554B2

公开(公告)日：2015-04-07

申请号：US13738061

申请日：2013-01-10

Applicant: Intermolecular Inc. ,  Kabushiki Kaisha Toshiba ,  SanDisk 3D LLC

Inventor： Imran Hashim ,  Ryan C. Clarke ,  Nan Lu ,  Tim Minvielle ,  Takeshi Yamaguchi

IPC: H01L45/00 ,  G11C13/00

CPC classification number: H01L45/146 ,  G11C11/56 ,  G11C11/5685 ,  G11C13/0002 ,  G11C13/0007 ,  G11C13/0064 ,  G11C13/0069 ,  G11C13/0097 ,  G11C2213/32 ,  G11C2213/71 ,  G11C2213/77 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/1253

Abstract: Provided are resistive random access memory (ReRAM) cells, each having three or more resistive states and being capable of storing multiple bits of data, as well as methods of fabricating and operating such ReRAM cells. Such ReRAM cells or, more specifically, their resistive switching layer have wide range of resistive states and are capable of being very conductive (e.g., about 1 kOhm) in one state and very resistive (e.g., about 1 MOhm) in another state. In some embodiments, a resistance ratio between resistive states may be between 10 and 1,000 even up to 10,000. The resistive switching layers also allow establishing stable and distinct intermediate resistive states that may be assigned different data values. These layers may be configured to switching between their resistive states using fewer programming pulses than conventional systems by using specific materials, switching pluses, and resistive state threshold.

Abstract translation: 提供了电阻随机存取存储器（ReRAM）单元，每个单元具有三个或更多个电阻状态，并且能够存储多个数据位，以及制造和操作这样的ReRAM单元的方法。 这样的ReRAM单元或更具体地，它们的电阻式开关层具有宽范围的电阻状态，并且在另一状态下能够在一种状态下非常导电（例如，约1kOhm），并且在另一状态下具有很强的电阻（例如约1MOhm）。 在一些实施例中，电阻状态之间的电阻比可以在10和1,000之间甚至高达10,000。 电阻式开关层还允许建立可分配不同数据值的稳定和不同的中间电阻状态。 这些层可以被配置为使用比常规系统更少的编程脉冲在其电阻状态之间切换，通过使用特定的材料，开关和电阻状态阈值。

公开(公告)号：US20150311257A1

公开(公告)日：2015-10-29

申请号：US14264280

申请日：2014-04-29

Applicant: Intermolecular Inc. ,  Kabushiki Kaisha Toshiba ,  SanDisk 3D LLC

Inventor： Federico Nardi ,  Ryan C. Clarke ,  Tim Minvielle ,  Yun Wang

IPC: H01L27/24 ,  H01L21/02 ,  H01L21/265 ,  H01L45/00 ,  H01L29/08

CPC classification number: H01L27/2463 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/265 ,  H01L27/2436 ,  H01L29/0847 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146 ,  H01L45/1608 ,  H01L45/1616 ,  H01L45/1625

Abstract: Provided are resistive random access memory (ReRAM) cells having extended conductive layers operable as electrodes of other devices, and methods of fabricating such cells and other devices. A conductive layer of a ReRAM cell extends beyond the cell boundary defined by the variable resistance layer. The extended portion may be used a source or drain region of a FET that may control an electrical current through the cell or other devices. The extended conductive layer may be also operable as electrode of another resistive-switching cell or a different device. The extended conductive layer may be formed from doped silicon. The variable resistance layer of the ReRAM cell may be positioned on the same level as a gate dielectric layer of the FET. The variable resistance layer and the gate dielectric layer may have the same thickness and share common materials, though they may be differently doped.

Abstract translation: 提供了具有可操作为其他器件的电极的延伸导电层的电阻随机存取存储器（ReRAM）单元，以及制造这样的单元和其它器件的方法。 ReRAM单元的导电层延伸超过由可变电阻层限定的单元边界。 延伸部分可以用于可控制通过电池或其他装置的电流的FET的源极或漏极区域。 扩展导电层也可以作为另一电阻式开关电池或不同器件的电极工作。 延伸的导电层可以由掺杂的硅形成。 ReRAM单元的可变电阻层可以位于与FET的栅极电介质层相同的水平上。 可变电阻层和栅极电介质层可以具有相同的厚度并且共享共同的材料，尽管它们可以是不同的掺杂。

公开(公告)号：US20140192585A1

公开(公告)日：2014-07-10

申请号：US13738061

申请日：2013-01-10

Applicant: INTERMOLECULAR INC. ,  KABUSHIKI KAISHA TOSHIBA ,  SANDISK 3D LLC

Inventor： Imran Hashim ,  Ryan C. Clarke ,  Nan Lu ,  Tim Minvielle ,  Takeshi Yamaguchi

IPC: G11C13/00 ,  H01L45/00

CPC classification number: H01L45/146 ,  G11C11/56 ,  G11C11/5685 ,  G11C13/0002 ,  G11C13/0007 ,  G11C13/0064 ,  G11C13/0069 ,  G11C13/0097 ,  G11C2213/32 ,  G11C2213/71 ,  G11C2213/77 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/1253

Abstract: Provided are resistive random access memory (ReRAM) cells, each having three or more resistive states and being capable of storing multiple bits of data, as well as methods of fabricating and operating such ReRAM cells. Such ReRAM cells or, more specifically, their resistive switching layer have wide range of resistive states and are capable of being very conductive (e.g., about 1 kOhm) in one state and very resistive (e.g., about 1 MOhm) in another state. In some embodiments, a resistance ratio between resistive states may be between 10 and 1,000 even up to 10,000. The resistive switching layers also allow establishing stable and distinct intermediate resistive states that may be assigned different data values. These layers may be configured to switching between their resistive states using fewer programming pulses than conventional systems by using specific materials, switching pluses, and resistive state threshold.

Abstract translation: 提供了电阻随机存取存储器（ReRAM）单元，每个单元具有三个或更多个电阻状态，并且能够存储多个数据位，以及制造和操作这样的ReRAM单元的方法。 这样的ReRAM单元或更具体地，它们的电阻式开关层具有宽范围的电阻状态，并且在另一状态下能够在一种状态下非常导电（例如，约1kOhm），并且在另一状态下具有很强的电阻（例如约1MOhm）。 在一些实施例中，电阻状态之间的电阻比可以在10和1,000之间甚至高达10,000。 电阻式开关层还允许建立可分配不同数据值的稳定和不同的中间电阻状态。 这些层可以被配置为使用比常规系统更少的编程脉冲在其电阻状态之间切换，通过使用特定的材料，开关和电阻状态阈值。

公开(公告)号：US09178148B2

公开(公告)日：2015-11-03

申请号：US14636421

申请日：2015-03-03

Applicant: Intermolecular Inc. ,  Kabushiki Kaisha Toshiba ,  SanDisk 3D LLC

Inventor： Imran Hashim ,  Ryan C. Clarke ,  Nan Lu ,  Tim Minvielle ,  Takeshi Yamaguchi

IPC: H01L45/00 ,  G11C13/00 ,  G11C11/56

CPC classification number: H01L45/146 ,  G11C11/56 ,  G11C11/5685 ,  G11C13/0002 ,  G11C13/0007 ,  G11C13/0064 ,  G11C13/0069 ,  G11C13/0097 ,  G11C2213/32 ,  G11C2213/71 ,  G11C2213/77 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/1253

Abstract: Provided are resistive random access memory (ReRAM) cells, each having three or more resistive states and being capable of storing multiple bits of data, as well as methods of fabricating and operating such ReRAM cells. Such ReRAM cells or, more specifically, their resistive switching layer have wide range of resistive states and are capable of being very conductive (e.g., about 1 kOhm) in one state and very resistive (e.g., about 1 MOhm) in another state. In some embodiments, a resistance ratio between resistive states may be between 10 and 1,000 even up to 10,000. The resistive switching layers also allow establishing stable and distinct intermediate resistive states that may be assigned different data values. These layers may be configured to switching between their resistive states using fewer programming pulses than conventional systems by using specific materials, switching pluses, and resistive state threshold.

公开(公告)号：US09178000B1

公开(公告)日：2015-11-03

申请号：US14264280

申请日：2014-04-29

Applicant: Intermolecular Inc. ,  Kabushiki Kaisha Toshiba ,  SanDisk 3D LLC

Inventor： Federico Nardi ,  Ryan C. Clarke ,  Tim Minvielle ,  Yun Wang

IPC: H01L29/02 ,  H01L29/792 ,  H01L27/11 ,  H01L21/00 ,  H01L27/24 ,  H01L45/00 ,  H01L29/08 ,  H01L21/265 ,  H01L21/02

CPC classification number: H01L27/2463 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/265 ,  H01L27/2436 ,  H01L29/0847 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146 ,  H01L45/1608 ,  H01L45/1616 ,  H01L45/1625

Abstract: Provided are resistive random access memory (ReRAM) cells having extended conductive layers operable as electrodes of other devices, and methods of fabricating such cells and other devices. A conductive layer of a ReRAM cell extends beyond the cell boundary defined by the variable resistance layer. The extended portion may be used a source or drain region of a FET that may control an electrical current through the cell or other devices. The extended conductive layer may be also operable as electrode of another resistive-switching cell or a different device. The extended conductive layer may be formed from doped silicon. The variable resistance layer of the ReRAM cell may be positioned on the same level as a gate dielectric layer of the FET. The variable resistance layer and the gate dielectric layer may have the same thickness and share common materials, though they may be differently doped.

Abstract translation: 提供了具有可操作为其他器件的电极的延伸导电层的电阻随机存取存储器（ReRAM）单元，以及制造这样的单元和其它器件的方法。 ReRAM单元的导电层延伸超过由可变电阻层限定的单元边界。 延伸部分可以用于可控制通过电池或其他装置的电流的FET的源极或漏极区域。 扩展导电层也可以作为另一电阻式开关电池或不同器件的电极工作。 延伸的导电层可以由掺杂的硅形成。 ReRAM单元的可变电阻层可以位于与FET的栅极电介质层相同的水平上。 可变电阻层和栅极电介质层可以具有相同的厚度并且共享共同的材料，尽管它们可以是不同的掺杂。

公开(公告)号：US09245649B2

公开(公告)日：2016-01-26

申请号：US14108877

申请日：2013-12-17

Applicant: Intermolecular Inc.

Inventor： Federico Nardi ,  Ryan C. Clarke ,  Yun Wang

IPC: G11C27/02 ,  G11C13/00

CPC classification number: G11C27/02 ,  G11C13/0002 ,  G11C13/0007

Abstract: A nonvolatile sample and hold circuit can include a resistive switching circuit, a sample circuit, a reset circuit, and a converter circuit. The resistive switching circuit can be operable to accept an input voltage Vg, and provide a resistance response Rrs that corresponds to the input signal Vg. The sampling circuit can be operable to sample an input signal such as an input voltage Vin, to provide a sampled voltage Vg. The reset circuit can be operable to reset the resistive switching circuit to a high resistance state. The converter circuit can be operable to convert the resistive switching circuit to an output voltage. The novel sample and hold circuit can have no issues related to charge injection, no settling time and instantaneous sampling time, together with potentially infinite hold time.

Abstract translation: 非易失性采样和保持电路可以包括电阻开关电路，采样电路，复位电路和转换器电路。 电阻开关电路可操作以接受输入电压Vg，并且提供对应于输入信号Vg的电阻响应Rrs。 采样电路可以用于对诸如输入电压Vin的输入信号进行采样，以提供采样电压Vg。 复位电路可以用于将电阻式开关电路复位到高电阻状态。 转换器电路可操作以将电阻开关电路转换成输出电压。 新颖的采样和保持电路可以没有与电荷注入相关的问题，无需建立时间和瞬间采样时间，以及潜在的无限延时时间。

公开(公告)号：US20150171323A1

公开(公告)日：2015-06-18

申请号：US14636421

申请日：2015-03-03

Applicant: Intermolecular Inc. ,  KABUSHIKI KAISHA TOSHIBA ,  SanDisk 3D LLC

Inventor： Imran Hashim ,  Ryan C. Clarke ,  Nan Lu ,  Tim Minvielle ,  Takeshi Yamaguchi

IPC: H01L45/00

CPC classification number: H01L45/146 ,  G11C11/56 ,  G11C11/5685 ,  G11C13/0002 ,  G11C13/0007 ,  G11C13/0064 ,  G11C13/0069 ,  G11C13/0097 ,  G11C2213/32 ,  G11C2213/71 ,  G11C2213/77 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/1253

Abstract: Provided are resistive random access memory (ReRAM) cells, each having three or more resistive states and being capable of storing multiple bits of data, as well as methods of fabricating and operating such ReRAM cells. Such ReRAM cells or, more specifically, their resistive switching layer have wide range of resistive states and are capable of being very conductive (e.g., about 1 kOhm) in one state and very resistive (e.g., about 1 MOhm) in another state. In some embodiments, a resistance ratio between resistive states may be between 10 and 1,000 even up to 10,000. The resistive switching layers also allow establishing stable and distinct intermediate resistive states that may be assigned different data values. These layers may be configured to switching between their resistive states using fewer programming pulses than conventional systems by using specific materials, switching pluses, and resistive state threshold.

Abstract translation: 提供了电阻随机存取存储器（ReRAM）单元，每个单元具有三个或更多个电阻状态，并且能够存储多个数据位，以及制造和操作这样的ReRAM单元的方法。 这样的ReRAM单元或更具体地，它们的电阻式开关层具有宽范围的电阻状态，并且在另一状态下能够在一种状态下非常导电（例如，约1kOhm），并且在另一状态下具有很强的电阻（例如约1MOhm）。 在一些实施例中，电阻状态之间的电阻比可以在10和1,000之间甚至高达10,000。 电阻式开关层还允许建立可分配不同数据值的稳定和不同的中间电阻状态。 这些层可以被配置为使用比常规系统更少的编程脉冲在其电阻状态之间切换，通过使用特定的材料，开关和电阻状态阈值。

公开(公告)号：US20150170760A1

公开(公告)日：2015-06-18

申请号：US14108877

申请日：2013-12-17

Applicant: Intermolecular Inc.

Inventor： Federico Nardi ,  Ryan C. Clarke ,  Yun Wang

IPC: G11C27/02

CPC classification number: G11C27/02 ,  G11C13/0002 ,  G11C13/0007

Abstract: A nonvolatile sample and hold circuit can include a resistive switching circuit, a sample circuit, a reset circuit, and a converter circuit. The resistive switching circuit can be operable to accept an input voltage Vg, and provide a resistance response Rrs that corresponds to the input signal Vg. The sampling circuit can be operable to sample an input signal such as an input voltage Vin, to provide a sampled voltage Vg. The reset circuit can be operable to reset the resistive switching circuit to a high resistance state. The converter circuit can be operable to convert the resistive switching circuit to an output voltage. The novel sample and hold circuit can have no issues related to charge injection, no settling time and instantaneous sampling time, together with potentially infinite hold time.

Abstract translation: 非易失性采样和保持电路可以包括电阻开关电路，采样电路，复位电路和转换器电路。 电阻开关电路可操作以接受输入电压Vg，并且提供对应于输入信号Vg的电阻响应Rrs。 采样电路可以用于对诸如输入电压Vin的输入信号进行采样，以提供采样电压Vg。 复位电路可以用于将电阻式开关电路复位到高电阻状态。 转换器电路可操作以将电阻开关电路转换成输出电压。 新颖的采样和保持电路可以没有与电荷注入相关的问题，无需建立时间和瞬间采样时间，以及潜在的无限延时时间。