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    Nonvolatile memory elements
    1.
    发明授权
    Nonvolatile memory elements 有权
    非易失性存储元件

    公开(公告)号：US09029232B2

    公开(公告)日：2015-05-12

    申请号：US14281550

    申请日：2014-05-19

    Applicant: Intermolecular Inc.

    Inventor： Sandra G Malhotra ,  Sean Barstow ,  Tony P. Chiang ,  Wayne R French ,  Pragati Kumar ,  Prashant B Phatak ,  Sunil Shanker ,  Wen Wu

    IPC: H01L21/02 ,  H01L45/00 ,  H01L27/24

    CPC classification number: H01L45/1608 ,  H01L27/2418 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/146 ,  H01L45/1625 ,  H01L45/1641

    Abstract: Nonvolatile memory elements that are based on resistive switching memory element layers are provided. A nonvolatile memory element may have a resistive switching metal oxide layer. The resistive switching metal oxide layer may have one or more layers of oxide. A resistive switching metal oxide may be doped with a dopant that increases its melting temperature and enhances its thermal stability. Layers may be formed to enhance the thermal stability of the nonvolatile memory element. An electrode for a nonvolatile memory element may contain a conductive layer and a buffer layer.

    Abstract translation: 提供了基于电阻式开关存储元件层的非易失性存储元件。 非易失性存储元件可以具有电阻性开关金属氧化物层。 电阻式开关金属氧化物层可以具有一层或多层氧化物。 电阻式开关金属氧化物可以掺杂有增加其熔融温度并增强其热稳定性的掺杂剂。 可以形成层以增强非易失性存储元件的热稳定性。 用于非易失性存储元件的电极可以包含导电层和缓冲层。

    Nonvolatile memory elements
    2.
    发明授权
    Nonvolatile memory elements 有权
    非易失性存储元件

    公开(公告)号：US08765567B2

    公开(公告)日：2014-07-01

    申请号：US14062473

    申请日：2013-10-24

    Applicant: Intermolecular Inc.

    Inventor： Sandra G Malhotra ,  Sean Barstow ,  Tony P. Chiang ,  Pragati Kumar ,  Prashant B Phatak ,  Sunil Shanker ,  Wen Wu

    IPC: H01L21/02

    CPC classification number: H01L45/1608 ,  H01L27/2418 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/146 ,  H01L45/1625 ,  H01L45/1641

    Abstract: Nonvolatile memory elements that are based on resistive switching memory element layers are provided. A nonvolatile memory element may have a resistive switching metal oxide layer. The resistive switching metal oxide layer may have one or more layers of oxide. A resistive switching metal oxide may be doped with a dopant that increases its melting temperature and enhances its thermal stability. Layers may be formed to enhance the thermal stability of the nonvolatile memory element. An electrode for a nonvolatile memory element may contain a conductive layer and a buffer layer.

    Abstract translation: 提供了基于电阻式开关存储元件层的非易失性存储元件。 非易失性存储元件可以具有电阻性开关金属氧化物层。 电阻式开关金属氧化物层可以具有一层或多层氧化物。 电阻式开关金属氧化物可以掺杂有增加其熔融温度并增强其热稳定性的掺杂剂。 可以形成层以增强非易失性存储元件的热稳定性。 用于非易失性存储元件的电极可以包含导电层和缓冲层。

    Resistive switching memory element including doped silicon electrode
    3.
    发明授权
    Resistive switching memory element including doped silicon electrode 有权
    电阻式开关存储元件包括掺杂硅电极

    公开(公告)号：US08698121B2

    公开(公告)日：2014-04-15

    申请号：US13935388

    申请日：2013-07-03

    Applicant: Intermolecular, Inc.

    Inventor： Prashant B. Phatak ,  Tony P. Chiang ,  Michael Miller ,  Wen Wu

    IPC: H01L47/00

    CPC classification number: H01L45/1616 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/10 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146

    Abstract: A resistive switching memory is described, including a first electrode comprising doped silicon having a first work function, a second electrode having a second work function that is different from the first work function by between 0.1 and 1.0 electron volts (eV), a metal oxide layer between the first electrode and the second electrode, the metal oxide layer switches using bulk-mediated switching using unipolar or bipolar switching voltages for switching from a low resistance state to a high resistance state and vice versa.

    Abstract translation: 描述了一种电阻式开关存储器，其包括包括具有第一功函数的掺杂硅的第一电极，具有与第一功函数不同的第二功函数的第二电极在0.1和1.0电子伏特（eV）之间的金属氧化物 在第一电极和第二电极之间，金属氧化物层使用单极或双极开关电压进行大量介导的开关，用于从低电阻状态切换到高电阻状态，反之亦然。

    Nonvolatile Memory Elements
    4.
    发明申请
    Nonvolatile Memory Elements 有权
    非易失性存储元件

    公开(公告)号：US20130059427A1

    公开(公告)日：2013-03-07

    申请号：US13656585

    申请日：2012-10-19

    Applicant: Intermolecular, Inc.

    Inventor： Sandra G. Malhotra ,  Sean Barstow ,  Tony P. Chiang ,  Pragati Kumar ,  Prashant B. Phatak ,  Sunil Shanker ,  Wen Wu

    IPC: H01L21/02

    CPC classification number: H01L45/1608 ,  H01L27/2418 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/146 ,  H01L45/1625 ,  H01L45/1641

    Abstract: Nonvolatile memory elements that are based on resistive switching memory element layers are provided. A nonvolatile memory element may have a resistive switching metal oxide layer. The resistive switching metal oxide layer may have one or more layers of oxide. A resistive switching metal oxide may be doped with a dopant that increases its melting temperature and enhances its thermal stability. Layers may be formed to enhance the thermal stability of the nonvolatile memory element. An electrode for a nonvolatile memory element may contain a conductive layer and a buffer layer.

    Abstract translation: 提供了基于电阻式开关存储元件层的非易失性存储元件。 非易失性存储元件可以具有电阻性开关金属氧化物层。 电阻式开关金属氧化物层可以具有一层或多层氧化物。 电阻式开关金属氧化物可以掺杂有增加其熔融温度并增强其热稳定性的掺杂剂。 可以形成层以增强非易失性存储元件的热稳定性。 用于非易失性存储元件的电极可以包含导电层和缓冲层。

    Dielectric K Value Tuning of HAH Stack for Improved TDDB Performance of Logic Decoupling Capacitor or Embedded DRAM
    6.
    发明申请
    Dielectric K Value Tuning of HAH Stack for Improved TDDB Performance of Logic Decoupling Capacitor or Embedded DRAM 审中-公开
    用于提高逻辑去耦电容器或嵌入式DRAM的TDDB性能的HAH堆叠的介质K值调谐

    公开(公告)号：US20150170837A1

    公开(公告)日：2015-06-18

    申请号：US14133496

    申请日：2013-12-18

    Applicant: Intermolecular, Inc.

    Inventor： Sucharita Madhukar ,  Nobumichi Fuchigami ,  Imran Hashim ,  Wen Wu

    IPC: H01G4/008 ,  H01G4/10

    CPC classification number: H01G4/008 ,  H01G4/10 ,  Y10T29/435

    Abstract: A hafnium oxide-aluminum oxide-hafnium oxide (HAH) based multilayer stack is used as the dielectric material in the formation of decoupling capacitors employed in microelectronic logic circuits. In some embodiments, the thickness of the aluminum oxide layer in the HAH multilayer stack varies between 0.1 nm and 1 nm. In some embodiments, the thickness of the two hafnium oxide layers varies between about 3.0 nm and 4.5 nm.

    Abstract translation: 在形成微电子逻辑电路中使用的去耦电容器时，使用基于氧化铪 - 氧化铪 - 氧化铪氧化物（HAH）的多层叠层作为介电材料。 在一些实施例中，HAH多层叠层中的氧化铝层的厚度在0.1nm和1nm之间变化。 在一些实施例中，两个氧化铪层的厚度在约3.0nm和4.5nm之间变化。

    Nonvolatile Memory Elements
    7.
    发明申请
    Nonvolatile Memory Elements 审中-公开
    非易失性存储元件

    公开(公告)号：US20140256111A1

    公开(公告)日：2014-09-11

    申请号：US14281550

    申请日：2014-05-19

    Applicant: Intermolecular Inc.

    Inventor： Sandra G. Malhotra ,  Sean Barstow ,  Tony P. Chiang ,  Wayne R. French ,  Pragati Kumar ,  Prashant B. Phatak ,  Sunil Shanker ,  Wen Wu

    IPC: H01L45/00

    CPC classification number: H01L45/1608 ,  H01L27/2418 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/146 ,  H01L45/1625 ,  H01L45/1641

    Abstract: Nonvolatile memory elements that are based on resistive switching memory element layers are provided. A nonvolatile memory element may have a resistive switching metal oxide layer. The resistive switching metal oxide layer may have one or more layers of oxide. A resistive switching metal oxide may be doped with a dopant that increases its melting temperature and enhances its thermal stability. Layers may be formed to enhance the thermal stability of the nonvolatile memory element. An electrode for a nonvolatile memory element may contain a conductive layer and a buffer layer.

    Abstract translation: 提供了基于电阻式开关存储元件层的非易失性存储元件。 非易失性存储元件可以具有电阻性开关金属氧化物层。 电阻式开关金属氧化物层可以具有一层或多层氧化物。 电阻式开关金属氧化物可以掺杂有增加其熔融温度并增强其热稳定性的掺杂剂。 可以形成层以增强非易失性存储元件的热稳定性。 用于非易失性存储元件的电极可以包含导电层和缓冲层。

    Resistive Switching Memory Element Including Doped Silicon Electrode
    9.
    发明申请
    Resistive Switching Memory Element Including Doped Silicon Electrode 有权
    包括掺杂硅电极的电阻式开关存储元件

    公开(公告)号：US20130292632A1

    公开(公告)日：2013-11-07

    申请号：US13935388

    申请日：2013-07-03

    Applicant: Intermolecular, Inc.

    Inventor： Prashant B. Phatak ,  Tony P. Chiang ,  Michael Miller ,  Wen Wu

    IPC: H01L45/00

    CPC classification number: H01L45/1616 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/10 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146

    Abstract: A resistive switching memory is described, including a first electrode comprising doped silicon having a first work function, a second electrode having a second work function that is different from the first work function by between 0.1 and 1.0 electron volts (eV), a metal oxide layer between the first electrode and the second electrode, the metal oxide layer switches using bulk-mediated switching using unipolar or bipolar switching voltages for switching from a low resistance state to a high resistance state and vice versa.

    Abstract translation: 描述了一种电阻式开关存储器，其包括包括具有第一功函数的掺杂硅的第一电极，具有与第一功函数不同的第二功函数的第二电极在0.1和1.0电子伏特（eV）之间的金属氧化物 在第一电极和第二电极之间，金属氧化物层使用单极或双极开关电压进行大量介导的开关，用于从低电阻状态切换到高电阻状态，反之亦然。

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