公开(公告)号：US20240334837A1

公开(公告)日：2024-10-03

申请号：US18129219

申请日：2023-03-31

Applicant: International Business Machines Corporation

Inventor： MATTHIAS GEORG GOTTWALD ,  Guohan Hu ,  John Bruley ,  Alexander Reznicek

IPC: H10N50/10 ,  H10B61/00 ,  H10N50/01 ,  H10N50/85

CPC classification number: H10N50/10 ,  H10B61/00 ,  H10N50/01 ,  H10N50/85

Abstract: A magnetic tunnel junction (MTJ) stack structure includes a reference layer; a tunnel barrier; and a free layer that comprises three distinct materials. All of the three distinct materials in the free layer are magnetic material. One of the three distinct materials in the free layer is a C38 structure alloy.

公开(公告)号：US20240357942A1

公开(公告)日：2024-10-24

申请号：US18137188

申请日：2023-04-20

Applicant: International Business Machines Corporation

Inventor： Alexander Reznicek ,  Guohan Hu ,  MATTHIAS GEORG GOTTWALD ,  Stephen L Brown

IPC: H10N50/80 ,  H01F10/32 ,  H10B61/00 ,  H10N50/01 ,  H10N50/20 ,  H10N50/85

CPC classification number: H10N50/80 ,  H01F10/3259 ,  H10B61/00 ,  H10N50/01 ,  H10N50/20 ,  H10N50/85

Abstract: A memory device including a pedestal structure containing a cobalt aluminum layer and a magnesium-aluminum-oxide containing base layer both of which have a (001) crystal orientation is provided. The memory device further includes a magnetic tunnel junction (MTJ) pillar containing an ordered alloy forming an interface with the cobalt aluminum alloy layer. The use of the structural and textural engineered pedestal structure provides improved control of resistance, as well as improved magnetic properties such as higher tunnel magnetoresistance (TMR) and higher perpendicular magnetic anisotropy (PMA), and closer distribution of the ordered alloy.

公开(公告)号：US20250040444A1

公开(公告)日：2025-01-30

申请号：US18358057

申请日：2023-07-25

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： MATTHIAS GEORG GOTTWALD ,  Guohan Hu ,  Virat Vasav Mehta ,  John Bruley ,  Alexander Reznicek

IPC: H10N50/85 ,  H01F10/32 ,  H10N50/01

Abstract: Embodiments of present invention provide a magnetoresistive random-access-memory (MRAM). The MRAM includes a reference layer; a tunnel barrier layer of magnesium-oxide (MgO); and a free layer, where the free layer includes a first cobalt-iron-boron (CoFeB) layer on top of the tunnel barrier layer; a spacer layer on top of the first CoFeB layer; a second CoFeB layer on top of the spacer layer; and a capping layer of MgO on top of the second CoFeB layer. Additionally, the first and the second CoFeB layer are substantially depleted of boron (B) to include respectively a first region adjacent to the tunnel barrier layer and the capping layer respectively and a second region adjacent to the spacer layer, where the first regions of the first and the second CoFeB layer include crystallized cobalt-iron (CoFe) and the second regions of the first and the second CoFeB layer include amorphous CoFe alloy.

公开(公告)号：US20230189658A1

公开(公告)日：2023-06-15

申请号：US17550464

申请日：2021-12-14

Applicant: International Business Machines Corporation

Inventor： Alexander Reznicek ,  MATTHIAS GEORG GOTTWALD ,  Stephen L Brown

IPC: H01L43/02 ,  G11C11/16 ,  H01L27/22

CPC classification number: H01L43/02 ,  G11C11/161 ,  H01L27/222

Abstract: A top pinned SAF-containing magnetic tunnel junction structure is provided that contains a coupling spacer composed of a paramagnetic hexagonal metal phase material that has a stoichiometric ratio of Me3X or Me2X, wherein Me is a magnetic metal having a magnetic moment and X is a metal that alloys with Me in a hexagonal phase and dilutes the magnetic moment of Me. In embodiments in which a Me3X coupling spacer is present, Me is cobalt, and X is vanadium, niobium, tantalum, molybdenum or tungsten. In embodiments in which a Me2X coupling spacer is present, Me is iron and X is tantalum or tungsten. The coupling spacer is formed by providing a material stack including at least a precursor paramagnetic hexagonal metal phase material forming multilayered structure that includes alternating layers of magnetic metal, Me, and metal, X, and then thermally soaking the material stack.

公开(公告)号：US20210296574A1

公开(公告)日：2021-09-23

申请号：US16826796

申请日：2020-03-23

Applicant: International Business Machines Corporation

Inventor： Alexander Reznicek ,  MATTHIAS GEORG GOTTWALD ,  Pouya Hashemi ,  Bruce B. Doris

IPC: H01L43/08 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12 ,  H01L27/22

Abstract: A method of manufacturing a magnetic tunnel junction device is provided. The method includes forming an MTJ stack including a reference layer, a tunnel barrier layer formed on the reference layer, a free layer formed on the barrier layer, and a cap layer formed on the free layer. The method also includes performing ion beam etching (IBE) through each layer of the MTJ stack to form at least one MTJ pillar. The method also includes forming an isolation layer on sidewalls of at least the tunnel barrier layer, the isolation layer comprising a same material as that of the tunnel barrier layer. A combined width of the isolation layer and the tunnel barrier layer is equal to or greater than a width of at least one of the reference layer and the free layer.