摘要:
Embodiments are directed to injecting domain walls in a magnetic racetrack memory. In some embodiments, a racetrack comprising a nanowire is coupled with a gate in order to manipulate an anisotropy associated with the nanowire. The racetrack and gate is coupled with a pinning layer configured to establish a magnetization direction in the nanowire.
摘要:
A magnetic device includes a first electrode portion, a free layer portion arranged on the first electrode portion, the free layer portion including a magnetic insulating material, a reference layer portion contacting the free layer portion, the reference layer portion including a magnetic metallic layer, and a second electrode portion arranged on the reference layer portion.
摘要:
A magnetic logic cell includes a first electrode portion, a magnetic portion arranged on the first electrode, the magnetic portion including an anti-ferromagnetic material or a ferrimagnetic material, a dielectric portion arranged on the magnetic portion, and a second electrode portion arranged on the dielectric portion.
摘要:
Embodiments are directed to injecting domain walls in a magnetic racetrack memory. In some embodiments, a racetrack comprising a nanowire is coupled with a gate in order to manipulate an anisotropy associated with the nanowire. The racetrack and gate is coupled with a pinning layer configured to establish a magnetization direction in the nanowire.
摘要:
A magnetic logic cell includes a first electrode portion, a magnetic portion arranged on the first electrode, the magnetic portion including an anti-ferromagnetic material or a ferrimagnetic material, a dielectric portion arranged on the magnetic portion, and a second electrode portion arranged on the dielectric portion.
摘要:
A magnetic device includes a first electrode portion, a free layer portion arranged on the first electrode portion, the free layer portion including a magnetic insulating material, a reference layer portion contacting the free layer portion, the reference layer portion including a magnetic metallic layer, and a second electrode portion arranged on the reference layer portion.
摘要:
A magnetic logic cell includes a first electrode portion, a magnetic portion arranged on the first electrode, the magnetic portion including an anti-ferromagnetic material or a ferrimagnetic material, a dielectric portion arranged on the magnetic portion, and a second electrode portion arranged on the dielectric portion.
摘要:
A method for depositing a material on a graphene layer includes arranging a graphene layer having an exposed substantially planar surface proximate to a magnetron assembly that is operative to emit a plasma plume substantially along a first line, wherein the exposed planar surface of the graphene layer is arranged at an angle that is non-orthogonal to the first line where the first line intersects the exposed planar surface; and emitting the plasma plume from the magnetron assembly such that a layer of deposition material is disposed on the graphene layer without appreciably damaging the graphene layer.
摘要:
A magnetic logic cell includes a first electrode portion, a magnetic portion arranged on the first electrode, the magnetic portion including an anti-ferromagnetic material or a ferrimagnetic material, a dielectric portion arranged on the magnetic portion, and a second electrode portion arranged on the dielectric portion.
摘要:
Embodiments are directed to injecting domain walls in a magnetic racetrack memory. In some embodiments, a racetrack comprising a nanowire is coupled with a gate in order to manipulate an anisotropy associated with the nanowire. The racetrack and gate is coupled with a pinning layer configured to establish a magnetization direction in the nanowire.