公开(公告)号：US20170236902A1

公开(公告)日：2017-08-17

申请号：US15585231

申请日：2017-05-03

Applicant: International Business Machines Corporation

Inventor： Sanghoon Lee ,  Effendi Leobandung ,  Renee Mo ,  Brent A. Wacaser

IPC: H01L29/06 ,  H01L29/786 ,  H01L29/04 ,  H01L29/423 ,  H01L21/02 ,  H01L29/66

CPC classification number: H01L29/66522 ,  B82Y10/00 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/02433 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/02538 ,  H01L21/02603 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/26546 ,  H01L21/30604 ,  H01L21/30608 ,  H01L21/30612 ,  H01L21/30617 ,  H01L21/3083 ,  H01L21/3086 ,  H01L21/7624 ,  H01L21/8258 ,  H01L29/045 ,  H01L29/0673 ,  H01L29/0847 ,  H01L29/20 ,  H01L29/42384 ,  H01L29/42392 ,  H01L29/66469 ,  H01L29/775 ,  H01L29/7853 ,  H01L29/78681 ,  H01L29/78696

Abstract: In one example, a method for fabricating a semiconductor device includes forming a mandrel comprising silicon. Sidewalls of the silicon are orientated normal to the direction of the silicon. A nanowire is grown directly on at least one of the sidewalls of the silicon and is formed from a material selected from Groups III-V. Only one end of the nanowire directly contacts the silicon.

公开(公告)号：US20170047424A1

公开(公告)日：2017-02-16

申请号：US15194728

申请日：2016-06-28

Applicant: International Business Machines Corporation

Inventor： Sanghoon Lee ,  Effendi Leobandung ,  Renee Mo ,  Brent A. Wacaser

IPC: H01L29/66 ,  H01L21/306 ,  H01L21/265 ,  H01L29/06 ,  H01L29/04

CPC classification number: H01L29/66522 ,  B82Y10/00 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/02433 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/02538 ,  H01L21/02603 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/26546 ,  H01L21/30604 ,  H01L21/30608 ,  H01L21/30612 ,  H01L21/30617 ,  H01L21/3083 ,  H01L21/3086 ,  H01L21/7624 ,  H01L21/8258 ,  H01L29/045 ,  H01L29/0673 ,  H01L29/0847 ,  H01L29/20 ,  H01L29/42384 ,  H01L29/42392 ,  H01L29/66469 ,  H01L29/775 ,  H01L29/7853 ,  H01L29/78681 ,  H01L29/78696

Abstract: In one example, a method for fabricating a semiconductor device includes forming a mandrel comprising silicon. Sidewalls of the silicon are orientated normal to the direction of the silicon. A nanowire is grown directly on at least one of the sidewalls of the silicon and is formed from a material selected from Groups III-V. Only one end of the nanowire directly contacts the silicon.

公开(公告)号：US09859397B2

公开(公告)日：2018-01-02

申请号：US15585231

申请日：2017-05-03

Applicant: International Business Machines Corporation

Inventor： Sanghoon Lee ,  Effendi Leobandung ,  Renee Mo ,  Brent A. Wacaser

IPC: H01L29/06 ,  H01L29/66 ,  H01L21/265 ,  H01L29/786 ,  H01L29/04 ,  H01L29/423 ,  H01L21/762 ,  H01L21/306 ,  H01L21/308 ,  H01L29/20 ,  H01L21/02

CPC classification number: H01L29/66522 ,  B82Y10/00 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/02433 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/02538 ,  H01L21/02603 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/26546 ,  H01L21/30604 ,  H01L21/30608 ,  H01L21/30612 ,  H01L21/30617 ,  H01L21/3083 ,  H01L21/3086 ,  H01L21/7624 ,  H01L21/8258 ,  H01L29/045 ,  H01L29/0673 ,  H01L29/0847 ,  H01L29/20 ,  H01L29/42384 ,  H01L29/42392 ,  H01L29/66469 ,  H01L29/775 ,  H01L29/7853 ,  H01L29/78681 ,  H01L29/78696

Abstract: In one example, a method for fabricating a semiconductor device includes forming a mandrel comprising silicon. Sidewalls of the silicon are orientated normal to the direction of the silicon. A nanowire is grown directly on at least one of the sidewalls of the silicon and is formed from a material selected from Groups III-V. Only one end of the nanowire directly contacts the silicon.

公开(公告)号：US20190013393A1

公开(公告)日：2019-01-10

申请号：US16129329

申请日：2018-09-12

Applicant: International Business Machines Corporation

Inventor： Sanghoon Lee ,  Effendi Leobandung ,  Renee Mo ,  Brent A. Wacaser

IPC: H01L29/66 ,  H01L29/20 ,  H01L21/265 ,  H01L29/786 ,  H01L21/308 ,  H01L21/306 ,  H01L21/762 ,  H01L29/04 ,  H01L29/06 ,  H01L29/08 ,  H01L29/78 ,  H01L29/775 ,  H01L29/423

CPC classification number: H01L29/66522 ,  B82Y10/00 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/02433 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/02538 ,  H01L21/02603 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/26546 ,  H01L21/30604 ,  H01L21/30608 ,  H01L21/30612 ,  H01L21/30617 ,  H01L21/3083 ,  H01L21/3086 ,  H01L21/7624 ,  H01L21/8258 ,  H01L29/045 ,  H01L29/0673 ,  H01L29/0847 ,  H01L29/20 ,  H01L29/42384 ,  H01L29/42392 ,  H01L29/66469 ,  H01L29/775 ,  H01L29/7853 ,  H01L29/78681 ,  H01L29/78696

Abstract: In one example, a method for fabricating a semiconductor device includes forming a mandrel comprising silicon. Sidewalls of the silicon are orientated normal to the direction of the silicon. A nanowire is grown directly on at least one of the sidewalls of the silicon and is formed from a material selected from Groups III-V. Only one end of the nanowire directly contacts the silicon.

公开(公告)号：US10103242B2

公开(公告)日：2018-10-16

申请号：US14824461

申请日：2015-08-12

Applicant: International Business Machines Corporation

Inventor： Sanghoon Lee ,  Effendi Leobandung ,  Renee Mo ,  Brent A. Wacaser

IPC: H01L29/06 ,  H01L29/66 ,  H01L29/786 ,  H01L29/04 ,  H01L29/423 ,  H01L21/762 ,  H01L21/306 ,  H01L21/308 ,  H01L29/20 ,  H01L21/265 ,  H01L21/02

Abstract: In one example, a method for fabricating a semiconductor device includes forming a mandrel comprising silicon. Sidewalls of the silicon are orientated normal to the direction of the silicon. A nanowire is grown directly on at least one of the sidewalls of the silicon and is formed from a material selected from Groups III-V. Only one end of the nanowire directly contacts the silicon.

公开(公告)号：US10763340B2

公开(公告)日：2020-09-01

申请号：US16129329

申请日：2018-09-12

Applicant: International Business Machines Corporation

Inventor： Sanghoon Lee ,  Effendi Leobandung ,  Renee Mo ,  Brent A. Wacaser

IPC: H01L29/66 ,  H01L29/06 ,  H01L29/786 ,  H01L29/04 ,  H01L29/423 ,  H01L29/20 ,  B82Y10/00 ,  H01L29/775 ,  H01L29/78 ,  H01L29/08 ,  H01L21/762 ,  H01L21/306 ,  H01L21/308 ,  H01L21/02 ,  H01L21/265 ,  H01L21/8258

Abstract: In one example, a method for fabricating a semiconductor device includes forming a mandrel comprising silicon. Sidewalls of the silicon are orientated normal to the direction of the silicon. A nanowire is grown directly on at least one of the sidewalls of the silicon and is formed from a material selected from Groups III-V. Only one end of the nanowire directly contacts the silicon.

公开(公告)号：US09698239B2

公开(公告)日：2017-07-04

申请号：US15194728

申请日：2016-06-28

Applicant: International Business Machines Corporation

Inventor： Sanghoon Lee ,  Effendi Leobandung ,  Renee Mo ,  Brent A. Wacaser

IPC: H01L29/06 ,  H01L29/66 ,  H01L29/04 ,  H01L21/265 ,  H01L21/306

CPC classification number: H01L29/66522 ,  B82Y10/00 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/02433 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/02538 ,  H01L21/02603 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/26546 ,  H01L21/30604 ,  H01L21/30608 ,  H01L21/30612 ,  H01L21/30617 ,  H01L21/3083 ,  H01L21/3086 ,  H01L21/7624 ,  H01L21/8258 ,  H01L29/045 ,  H01L29/0673 ,  H01L29/0847 ,  H01L29/20 ,  H01L29/42384 ,  H01L29/42392 ,  H01L29/66469 ,  H01L29/775 ,  H01L29/7853 ,  H01L29/78681 ,  H01L29/78696

Abstract: In one example, a method for fabricating a semiconductor device includes forming a mandrel comprising silicon. Sidewalls of the silicon are orientated normal to the direction of the silicon. A nanowire is grown directly on at least one of the sidewalls of the silicon and is formed from a material selected from Groups III-V. Only one end of the nanowire directly contacts the silicon.

公开(公告)号：US20170047399A1

公开(公告)日：2017-02-16

申请号：US14824461

申请日：2015-08-12

Applicant: International Business Machines Corporation

Inventor： Sanghoon Lee ,  Effendi Leobandung ,  Renee Mo ,  Brent A. Wacaser

IPC: H01L29/06 ,  H01L29/66 ,  H01L29/04 ,  H01L29/20 ,  H01L21/762 ,  H01L21/306 ,  H01L21/308 ,  H01L29/786 ,  H01L29/423

CPC classification number: H01L29/66522 ,  B82Y10/00 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/02433 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/02538 ,  H01L21/02603 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/26546 ,  H01L21/30604 ,  H01L21/30608 ,  H01L21/30612 ,  H01L21/30617 ,  H01L21/3083 ,  H01L21/3086 ,  H01L21/7624 ,  H01L21/8258 ,  H01L29/045 ,  H01L29/0673 ,  H01L29/0847 ,  H01L29/20 ,  H01L29/42384 ,  H01L29/42392 ,  H01L29/66469 ,  H01L29/775 ,  H01L29/7853 ,  H01L29/78681 ,  H01L29/78696

Abstract: In one example, a method for fabricating a semiconductor device includes forming a mandrel comprising silicon. Sidewalls of the silicon are orientated normal to the direction of the silicon. A nanowire is grown directly on at least one of the sidewalls of the silicon and is formed from a material selected from Groups III-V. Only one end of the nanowire directly contacts the silicon.

Abstract translation: 在一个示例中，制造半导体器件的方法包括形成包括硅的心轴。 硅的侧壁定向垂直于硅的<111>方向。 纳米线直接生长在硅的至少一个侧壁上，并由选自III-V族的材料形成。 只有纳米线的一端直接接触硅。