公开(公告)号：US5663089A

公开(公告)日：1997-09-02

申请号：US465350

申请日：1995-06-05

申请人： Atsushi Tomozawa ,  Eiji Fujii ,  Hideo Torii ,  Masumi Hattori ,  Satoru Fujii ,  Ryoichi Takayama

发明人： Atsushi Tomozawa ,  Eiji Fujii ,  Hideo Torii ,  Masumi Hattori ,  Satoru Fujii ,  Ryoichi Takayama

IPC分类号： H01G4/30 ,  H01L21/70

CPC分类号： H01G4/306

摘要： A laminated thin film capacitor having a substrate, at least two electrode layers, at least one dielectric layer and a pair of external electrode which are placed on respective side walls of the capacitor, wherein the metal electrode layer and the dielectric layers are laminated alternately on the substrate, and every other metal electrode layers are exposed on each of side walls of the capacitor, which capacitor is excellent in dielectric properties such as a high capacity per unit volume.

摘要翻译： 一种叠层薄膜电容器，其具有基板，至少两个电极层，至少一个电介质层和一对外部电极，所述至少一个电介质层和一对外部电极被放置在所述电容器的相应侧壁上，其中所述金属电极层和所述电介质层交替层叠在 基板和每个其他金属电极层暴露在电容器的每个侧壁上，该电容器具有优异的介电特性，例如每单位体积的高容量。

公开(公告)号：US5406445A

公开(公告)日：1995-04-11

申请号：US216966

申请日：1994-03-24

申请人： Eiji Fujii ,  Atsushi Tomozawa ,  Hideo Torii ,  Masumi Hattori ,  Ryoichi Takayama ,  Satoru Fujii

发明人： Eiji Fujii ,  Atsushi Tomozawa ,  Hideo Torii ,  Masumi Hattori ,  Ryoichi Takayama ,  Satoru Fujii

IPC分类号： H01G4/20 ,  H01L29/04 ,  H01L23/48

CPC分类号： H01G4/20 ,  H01L2224/4918 ,  H01L2924/181

摘要： A NaCl oxide thin layer oriented to (100) face or a spinel oxide thin layer oriented to (100) face, a perovskite dielectric thin layer oriented to (100) face and a metal electrode are sequentially laminated on a metal electrode, thus providing a thin film capacitor. Or alternatively, a thin film capacitor is manufactured by sequentially laminating a NaCl oxide thin layer oriented to (100) face or a spinel oxide thin layer oriented to (100) face, a platinum thin layer as a lower electrode oriented to (100) face, a perovskite dielectric thin layer oriented to (100) face and a metal thin layer as an upper electrode on a substrate. A plasma-enhanced CVD method is applied to form a NaCl oxide thin layer, a spinel oxide thin layer and a perovskite dielectric thin layer while a vacuum deposition method, a sputtering method, a CVD method or a plasma-enhanced CVD method is applied for the formation of a metal electrode.

摘要翻译： 将取向为（100）面的NaCl氧化物薄层或取向为（100）面的尖晶石氧化物薄层，朝向（100）面的钙钛矿电介质薄层和金属电极依次层压在金属电极上，从而提供 薄膜电容器。 或者，通过依次层叠取向于（100）面的氧化锌薄膜或取向为（100）面的尖晶石氧化物薄层，将铂薄层作为朝向（100）面的下部电极而制造薄膜电容器 取向为（100）面的钙钛矿电介质薄层和在基板上作为上部电极的金属薄层。 当采用真空沉积法，溅射法，CVD法或等离子体增强CVD法应用等离子体增强CVD法形成NaCl氧化物薄层，尖晶石氧化物薄层和钙钛矿电介质薄层 形成金属电极。

公开(公告)号：US5459635A

公开(公告)日：1995-10-17

申请号：US215816

申请日：1994-03-22

申请人： Atsushi Tomozawa ,  Eiji Fujii ,  Hideo Torii ,  Masumi Hattori ,  Satoru Fujii ,  Ryoichi Takayama

发明人： Atsushi Tomozawa ,  Eiji Fujii ,  Hideo Torii ,  Masumi Hattori ,  Satoru Fujii ,  Ryoichi Takayama

IPC分类号： H01G4/30 ,  H01G4/10

CPC分类号： H01G4/306

摘要： A laminated thin film capacitor having a substrate, at least two electrode layers, at least one dielectric layer and a pair of external electrode which are placed on respective side walls of the capacitor, wherein the metal electrode layer and the dielectric layers are laminated alternately on the substrate, and every other metal electrode layers are exposed on each of side walls of the capacitor, which capacitor is excellent in dielectric properties such as a high capacity per unit volume.

摘要翻译： 一种叠层薄膜电容器，其具有基板，至少两个电极层，至少一个电介质层和一对外部电极，所述至少一个电介质层和一对外部电极被放置在所述电容器的相应侧壁上，其中所述金属电极层和所述电介质层交替层叠在 基板和每个其他金属电极层暴露在电容器的每个侧壁上，该电容器具有优异的介电特性，例如每单位体积的高容量。

公开(公告)号：US5521454A

公开(公告)日：1996-05-28

申请号：US302011

申请日：1994-09-09

申请人： Masumi Hattori ,  Hideo Torii ,  Masaki Aoki ,  Eiji Fujii ,  Atsushi Tomozawa ,  Ryoichi Takayama ,  Ken Kamata ,  Yasuhiko Horio

发明人： Masumi Hattori ,  Hideo Torii ,  Masaki Aoki ,  Eiji Fujii ,  Atsushi Tomozawa ,  Ryoichi Takayama ,  Ken Kamata ,  Yasuhiko Horio

IPC分类号： H03H3/08 ,  H03H9/02 ,  H03H9/00

CPC分类号： H03H3/08 ,  H03H9/02574

摘要： A surface wave filter element includes a portion on which elastic surface waves propagate. This portion includes a piezoelectric material, an amorphous boron layer or plate and IDT electrodes for inputting and outputting signals. The piezoelectric material is a film made of ZnO, LiNbO.sub.3 or LiTaO.sub.3 formed by sputtering, ion beam deposition or chemical vapor deposition. The amorphous boron layer or boron plate may be formed on a substrate made of an inorganic material. The boron material is formed using electron beam deposition, ion beam deposition or chemical vapor deposition.

摘要翻译： 表面波滤波器元件包括弹性表面波在其上传播的部分。 该部分包括用于输入和输出信号的压电材料，非晶硼层或板和IDT电极。 压电材料是通过溅射，离子束沉积或化学气相沉积形成的由ZnO，LiNbO 3或LiTaO 3制成的膜。 无定形硼层或硼板可以形成在由无机材料制成的基板上。 硼材料使用电子束沉积，离子束沉积或化学气相沉积形成。

公开(公告)号：US20050087689A1

公开(公告)日：2005-04-28

申请号：US10503328

申请日：2003-12-04

申请人： Atsushi Tomozawa ,  Satoru Fujii ,  Eiji Fujii ,  Hideo Torii ,  Ryoichi Takayama

发明人： Atsushi Tomozawa ,  Satoru Fujii ,  Eiji Fujii ,  Hideo Torii ,  Ryoichi Takayama

IPC分类号： G01J5/34 ,  H01L37/02 ,  G01J5/00

CPC分类号： G01J5/34 ,  H01L37/025

摘要： A first electrode layer made of a noble metal containing at least one additive selected from the group consisting of Ti, Co, Ni, Mg, Fe, Ca, Sr, Mn, Ba and Al and oxides thereof, a pyroelectric layer having a thickness of 0.5 to 5 μm and having a perovskite crystalline structure whose chemical composition is represented as (Pb(1-y)Lay)Ti(1-y/4)O3 (0

摘要翻译： 由含有选自Ti，Co，Ni，Mg，Fe，Ca，Sr，Mn，Ba和Al中的至少一种添加剂的贵金属制成的第一电极层及其氧化物，其厚度为 0.5〜5μm，具有钙化晶体结构，其化学组成表示为（Pb（1-y）La y）Ti（1-y / 4） ）O 3（0

公开(公告)号：US5866238A

公开(公告)日：1999-02-02

申请号：US811301

申请日：1997-03-04

申请人： Ryoichi Takayama ,  Yoshihiro Tomita ,  Satoru Fujii ,  Masayuki Okano ,  Hideo Torii ,  Eiji Fujii ,  Atsushi Tomozawa

发明人： Ryoichi Takayama ,  Yoshihiro Tomita ,  Satoru Fujii ,  Masayuki Okano ,  Hideo Torii ,  Eiji Fujii ,  Atsushi Tomozawa

IPC分类号： H01L37/02 ,  H01L41/24 ,  B32B3/00

CPC分类号： H01L37/02 ,  H01L41/1875 ,  H01L41/316 ,  H01L41/319 ,  Y10T428/24917 ,  Y10T428/24926

摘要： A first ferroelectric thin film device is provided with a first substrate consisting of polycrystal, amorphous material or metal material and a first ferroelectric thin film formed on the first substrate. The average of thermal expansion coefficients of the substrate from room temperature to temperature for forming the ferroelectric thin film is 70.times.10.sup.-7 /.degree.C. or more. At least 75% of crystal axes of the first ferroelectric thin film are oriented in -direction. A second ferroelectric thin film device is provided with a second substrate consisting of amorphous material and a second ferroelectric thin film formed on the second substrate. The average of thermal expansion coefficients of the substrate from room temperature to temperature for forming the ferroelectric thin film is 50.times.10.sup.-7 /.degree.C. or less. At least 75% of crystal axes of the second ferroelectric thin film are oriented in direction.

摘要翻译： 第一铁电薄膜器件设置有由多晶，非晶材料或金属材料组成的第一衬底和形成在第一衬底上的第一铁电薄膜。 从形成铁电薄膜的室温到温度的基板的热膨胀系数的平均值为70×10 -7 /℃以上。 第一铁电薄膜的至少75％的晶轴取向为<001>方向。 第二铁电薄膜器件设置有由非晶材料构成的第二衬底和形成在第二衬底上的第二铁电薄膜。 从形成铁电薄膜的室温到温度的基板的热膨胀系数的平均值为50×10 -7 /℃以下。 第二铁电薄膜的至少75％的晶轴取向为<100>方向。

公开(公告)号：US07083270B2

公开(公告)日：2006-08-01

申请号：US10462358

申请日：2003-06-16

申请人： Hideo Torii ,  Eiji Fujii ,  Atsushi Tomozawa ,  Akiko Murata ,  Ryoichi Takayama ,  Taku Hirasawa

发明人： Hideo Torii ,  Eiji Fujii ,  Atsushi Tomozawa ,  Akiko Murata ,  Ryoichi Takayama ,  Taku Hirasawa

IPC分类号： B41J2/045

CPC分类号： G01P15/0922 ,  B41J2/14233 ,  B41J2/14282 ,  B41J2002/1425 ,  B41J2202/03 ,  G01C19/5607 ,  H01L41/0477 ,  H01L41/0815 ,  H01L41/094 ,  H01L41/0973 ,  H01L41/316 ,  H01L41/319

摘要： In a piezoelectric element 20, a first electrode layer 2 made of an alloy of at least one metal selected from the group consisting of cobalt, nickel, iron, manganese and copper and a noble metal is formed on a silicon substrate 1, and a piezoelectric layer 3 made of a rhombohedral or tetragonal perovskite oxide (e.g., PZT) is formed on the first electrode layer 2 so that the piezoelectric layer 3 is preferentially oriented along the (001) plane.

摘要翻译： 在压电元件20中，在硅基板1上形成由选自钴，镍，铁，锰和铜中的至少一种金属和贵金属构成的第一电极层2， 在第一电极层2上形成由菱方或四方钙钛矿氧化物（例如PZT）制成的层3，使得压电层3优先沿（001）面取向。

公开(公告)号：US20060146097A1

公开(公告)日：2006-07-06

申请号：US11362583

申请日：2006-02-24

申请人： Eiji Fujii ,  Hideo Torii ,  Ryoichi Takayama ,  Atsushi Tomozawa ,  Akiko Murata ,  Taku Hirasawa

发明人： Eiji Fujii ,  Hideo Torii ,  Ryoichi Takayama ,  Atsushi Tomozawa ,  Akiko Murata ,  Taku Hirasawa

IPC分类号： B41J2/045

CPC分类号： H01L41/0815 ,  B41J2/14233 ,  B41J2/161 ,  B41J2/1623 ,  B41J2/1646 ,  B41J2002/14491 ,  B41J2202/03 ,  G01C19/5607 ,  H01L41/1876 ,  H01L41/316 ,  Y10T29/49401

摘要： In a piezoelectric element, an adhesive layer 12 is provided on a substrate 11, a first electrode layer 14 made of a noble metal containing titanium or titanium oxide is provided on the adhesive layer 12, and an orientation control layer 15 that is preferentially oriented along a (100) or (001) plane is provided on the first electrode layer 14. In the vicinity of a surface of the orientation control layer 15 that is closer to the first electrode layer 14, a (100)- or (001)-oriented region extends over titanium or titanium oxide located on one surface of the first electrode layer 14 that is closer to the orientation control layer 15, and the cross-sectional area of the region in the direction perpendicular to the thickness direction gradually increases in the direction away from the first electrode layer 14 toward the opposite side. Further, a piezoelectric layer 16 that is preferentially oriented along a (001) plane is provided on the orientation control layer 15.

摘要翻译： 在压电元件中，在基板11上设置粘合剂层12，在粘合剂层12上设置由含有钛或氧化钛的贵金属构成的第一电极层14，优选的是取向控制层15 在第一电极层14上设置（100）或（001）面。 在取向控制层15的靠近第一电极层14的表面附近，位于第一电极层14的一个表面上的（100）或（001）取向区域延伸到钛或氧化钛上 更靠近取向控制层15，并且沿与厚度方向正交的方向的区域的横截面积沿远离第一电极层14的方向逐渐增大。 此外，在取向控制层15上设置优选沿（001）面取向的压电体层16。

公开(公告)号：US5712001A

公开(公告)日：1998-01-27

申请号：US619076

申请日：1996-03-20

申请人： Eiji Fujii ,  Atsushi Tomozawa ,  Hideo Torii ,  Ryoichi Takayama

发明人： Eiji Fujii ,  Atsushi Tomozawa ,  Hideo Torii ,  Ryoichi Takayama

IPC分类号： C30B25/10 ,  C23C16/40 ,  C23C16/455 ,  C23C16/50 ,  C23C16/509 ,  C30B25/16 ,  B05D3/06

CPC分类号： C23C16/45561 ,  C23C16/406 ,  C23C16/455 ,  C23C16/5096

摘要： The present invention relates to a process for producing crystallographic oriented oxide thin films having an NaCl-type structure, a spinel structure or a Wurtzite structure used as a buffer layer to obtain a functional oxide thin film such as a superconductive oxide thin film and a ferroelectric thin film, and a chemical vapor deposition apparatus used therefor. A rotatable substrate holder is provided in a reaction chamber. The substrate holder, which holds substrates thereunder, includes a substrate heater. The substrate holder is grounded to provide an electrode. Another electrode, which is connected to a high frequency power source, is located opposing the substrate holder in the reaction chamber. At a side wall of the reaction chamber, an exhaust is arranged. In a plasma electric discharge area formed between the substrate holder and the electrode, a material gas supplier is located, having a predetermined tilt angle .theta. with respect to the substrate holder.

摘要翻译： 本发明涉及一种制备具有NaCl型结构，尖晶石结构或纤锌矿结构的晶体取向氧化物薄膜的方法，该结构用作缓冲层以获得诸如超导氧化物薄膜和铁电体之类的功能氧化物薄膜 薄膜和用于其的化学气相沉积设备。 可旋转的基板保持器设置在反应室中。 保持基板的基板支架包括基板加热器。 衬底保持器接地以提供电极。 连接到高频电源的另一个电极与反应室中的衬底保持器相对定位。 在反应室的侧壁处布置排气。 在形成在基板支架和电极之间的等离子体放电区域中，相对于基板支架具有预定的倾斜角度θ的材料气体供应器。

公开(公告)号：US07478558B2

公开(公告)日：2009-01-20

申请号：US11362583

申请日：2006-02-24

申请人： Eiji Fujii ,  Hideo Torii ,  Ryoichi Takayama ,  Atsushi Tomozawa ,  Akiko Murata ,  Taku Hirasawa

发明人： Eiji Fujii ,  Hideo Torii ,  Ryoichi Takayama ,  Atsushi Tomozawa ,  Akiko Murata ,  Taku Hirasawa

IPC分类号： G01C19/00 ,  B41J2/045 ,  H01L41/04

CPC分类号： H01L41/0815 ,  B41J2/14233 ,  B41J2/161 ,  B41J2/1623 ,  B41J2/1646 ,  B41J2002/14491 ,  B41J2202/03 ,  G01C19/5607 ,  H01L41/1876 ,  H01L41/316 ,  Y10T29/49401

摘要： In a piezoelectric element, an adhesive layer 12 is provided on a substrate 11, a first electrode layer 14 made of a noble metal containing titanium or titanium oxide is provided on the adhesive layer 12, and an orientation control layer 15 that is preferentially oriented along a (100) or (001) plane is provided on the first electrode layer 14. In the vicinity of a surface of the orientation control layer 15 that is closer to the first electrode layer 14, a (100)- or (001)-oriented region extends over titanium or titanium oxide located on one surface of the first electrode layer 14 that is closer to the orientation control layer 15, and the cross-sectional area of the region in the direction perpendicular to the thickness direction gradually increases in the direction away from the first electrode layer 14 toward the opposite side. Further, a piezoelectric layer 16 that is preferentially oriented along a (001) plane is provided on the orientation control layer 15.

摘要翻译： 在压电元件中，在基板11上设置粘合剂层12，在粘合剂层12上设置由含有钛或氧化钛的贵金属构成的第一电极层14，优选的是取向控制层15 在第一电极层14上设置有（100）或（001）面。在取向控制层15的靠近第一电极层14的表面附近，（100） - 或（001） - 位于第一电极层14的靠近取向控制层15的一个表面上的钛或氧化钛上，并且沿与厚度方向垂直的方向的区域的横截面积沿着方向 远离第一电极层14朝向相对侧。 此外，在取向控制层15上设置优选沿（001）面取向的压电体层16。